Semiconductor package having a conductive member with a metal core for substrate connections
In examples, a semiconductor package comprises a semiconductor die including a circuit, a housing covering the semiconductor die, and a conductive terminal coupled to the semiconductor die and exposed to an exterior surface of the housing. The package also comprises a sensor exposed on the exterior surface of the housing, a flux layer on the conductive terminal and a conductive member on the flux layer. The conductive member includes a copper core, a nickel layer covering the copper core, and a solder layer covering the nickel layer.
1 . A semiconductor package, comprising:
a semiconductor die including a circuit;
a housing covering the semiconductor die, the housing including a top surface and a side surface;
a conductive terminal coupled to the semiconductor die and exposed to the side surface of the housing;
a sensor exposed on the side surface of the housing;
a flux layer on the conductive terminal; and
a conductive member on the flux layer, the conductive member including:
a copper core;
a nickel layer covering the copper core; and
a solder layer covering the nickel layer.
2 . The semiconductor package of claim 1 , wherein the conductive terminal includes a bond pad, a protective layer abutting the bond pad, and a metal seed layer abutting the protective layer.
3 . The semiconductor package of claim 1 , wherein the solder layer has a volume ranging from 40 kilomicrons 3 to 300 kilomicrons 3 .
4 . The semiconductor package of claim 1 , wherein the nickel layer has a thickness ranging from 2 microns to 5 microns.
5 . The semiconductor package of claim 1 , wherein the copper core has a spherical or ovoid shape.
6 . The semiconductor package of claim 1 , wherein the flux layer has a thickness ranging from 20 microns to 40 microns.
7 . The semiconductor package of claim 1 , wherein the solder layer has a thickness ranging from 20 microns to 100 microns.
8 . The semiconductor package of claim 1 , wherein the copper core has a diameter between 30 microns and 100 microns.
9 . The semiconductor package of claim 1 , wherein the conductive terminal is located between 20 microns and 100 microns from an edge of the housing.
10 . The semiconductor package of claim 1 , wherein the conductive member has a volume ranging from 14 kilomicrons 3 to 524 kilomicrons 3 , and the solder layer has a volume that is a percentage of the copper core volume ranging from 40% to 80%.
11 . A semiconductor package, comprising:
a semiconductor die including a circuit;
a housing covering the semiconductor die, the housing including a side surface orthogonal to a top surface of the housing;
a conductive terminal coupled to the semiconductor die and exposed to the side surface;
and
a conductive member attached to the conductive terminal, the conductive member including:
a copper core;
a nickel layer covering the copper core; and
a solder layer covering the nickel layer.
12 . The semiconductor package of claim 11 , wherein the copper core has a diameter ranging from 30 microns to 100 microns.
13 . The semiconductor package of claim 11 , wherein the solder layer has a volume ranging from 40 kilomicrons 3 to 300 kilomicrons 3 .
14 . The semiconductor package of claim 11 , wherein the flux layer has a thickness ranging from 20 microns to 40 microns.
15 . The semiconductor package of claim 11 , wherein the solder layer has a thickness ranging from 20 microns to 100 microns.
16 . The semiconductor package of claim 11 , wherein the conductive member includes a spherical or an ovoid shape.
17 . A semiconductor package, comprising:
a semiconductor die electrically coupled to a conductive terminal, and to an optical sensor;
a housing in contact with the semiconductor die and the conductive terminal, the housing including a top surface and a side surface orthogonal to the top surface, the optical sensor visible from the side surface of the housing; and
a conductive member attached to the conductive terminal, the conductive member including:
a copper core;
a nickel layer in contact with the copper core; and
a solder layer in contact with the nickel layer, wherein the conductive member is on the side surface of the housing.
18 . The semiconductor package of claim 17 , wherein the conductive member includes a spherical or an ovoid shape.
19 . The semiconductor package of claim 17 , wherein the conductive member is proximate a bottom surface of the housing than the top surface, the bottom surface opposite the top surface.