Ceramic package capacitors

1 . A ceramic semiconductor package, comprising:

a first semiconductor die;

a second semiconductor die; and

a ceramic body including a ceramic member, the ceramic member comprising:

a first conductor on a top surface of the ceramic member; and

a second conductor including:

a first member on the top surface of the ceramic member and separated from the first conductor, the first member coupled to a device side of the first semiconductor die; and

a second member coupled to the first member by a vertical member, the second member extending horizontally within the ceramic member parallel to and coinciding vertically with the first conductor, the second member coupled to a device side of the second semiconductor die.

2 . The ceramic semiconductor package of claim 1 , further comprising a first ground conductor on the top surface of the ceramic member and a second ground conductor having a first ground member on the top surface and a second ground member inside the ceramic member.

3 . The ceramic semiconductor package of claim 2 , wherein the second ground member and the first ground conductor do not vertically coincide.

4 . The ceramic semiconductor package of claim 2 , further comprising a first heatsink coupled to a non-device side of the first semiconductor die, wherein the first ground conductor is coupled to the first heatsink by a first via extending vertically through the ceramic member.

5 . The ceramic semiconductor package of claim 4 , further comprising a second heatsink coupled to a non-device side of the second semiconductor die, wherein the second ground conductor is coupled to the second heatsink by a second via extending vertically through the ceramic member.

6 . The ceramic semiconductor package of claim 1 , wherein the first conductor and the first member are configured to produce a first capacitance and the first conductor and the second member are configured to produce a second capacitance, the first and second capacitances combining to form a total capacitance of no more than 69 femtofarads (fF).

7 . The ceramic semiconductor package of claim 1 , wherein a vertical gap between the first conductor and the second member ranges between 120 microns and 180 microns.

8 . The ceramic semiconductor package of claim 1 , wherein the first conductor and the second member vertically coincide along a portion of the second member, the portion having a length ranging from 210 microns to 280 microns.

9 . The ceramic semiconductor package of claim 1 , wherein the first conductor and the first member are separated by a gap ranging from 1.638 mm to 1.658 mm.

10 . A ceramic semiconductor package, comprising:

a first semiconductor die;

a second semiconductor die; and

a ceramic body including a ceramic member, the ceramic member positioned between the first and second semiconductor dies, the ceramic member comprising:

a first set of conductors coupled to the first semiconductor die and on a top surface of the ceramic member;

a second set of conductors coupled to the second semiconductor die, each conductor in the second set of conductors having a first member on the top surface and having a second member within the ceramic member, the second member parallel to the top surface;

a first set of ground conductors interspersed between the first set of conductors, the first set of ground conductors adapted to be coupled to ground; and

a second set of ground conductors interspersed between the second set of conductors, the second set of ground conductors adapted to be coupled to ground.

11 . The ceramic semiconductor package of claim 10 , wherein ground conductors in the first set of ground conductors and conductors in the first set of conductors are configured in an alternating pattern.

12 . The ceramic semiconductor package of claim 10 , wherein ground conductors in the second set of ground conductors and conductors in the second set of conductors are configured in an alternating pattern.

13 . The ceramic semiconductor package of claim 10 , wherein a conductor in the first set of conductors vertically coincides with one of the second members.

14 . The ceramic semiconductor package of claim 10 , wherein the first set of ground conductors do not vertically coincide with the second set of ground conductors.

15 . The ceramic semiconductor package of claim 10 , wherein a conductor in the first set of conductors and a conductor in the second set of conductors are configured to provide a capacitance no greater than 69 femtofarads (fF).

16 . The ceramic semiconductor package of claim 10 , further comprising a first heatsink coupled to a non-device side of the first semiconductor die, the first set of ground conductors adapted to be coupled to ground by way of the first heatsink.

17 . The ceramic semiconductor package of claim 10 , further comprising a second heatsink coupled to a non-device side of the second semiconductor die, the second set of ground conductors adapted to be coupled to ground by way of the second heatsink.

18 . A ceramic semiconductor package, comprising:

a ceramic body;

a first capacitor including a pair of parallel conductors and a portion of the ceramic body positioned between the pair of parallel conductors;

a second capacitor including a pair of conductors separated by air, the second capacitor electrically parallel with the first capacitor; and

first and second semiconductor dies, each die coupled to the first and second capacitors.

19 . The ceramic semiconductor package of claim 18 , wherein the pair of parallel conductors and the pair of conductors have a conductor in common.

20 . The ceramic semiconductor package of claim 18 , wherein the first and second capacitors are configured to produce a combined capacitance not exceeding 69 femtofarads (fF).