Semiconductor device and manufacturing method thereof
A semiconductor device according to the present embodiment includes an insulation member, a columnar electrode, a member, and an electrode pad. The insulation member has a first face. The columnar electrode penetrates the insulation member in a direction approximately perpendicular to the first face. The columnar electrode has a columnar electrode member and a first metal layer of at least one layer which covers an outer circumference of the columnar electrode member and which extends until becoming exposed from the first face. The member is provided on the first face and is arranged so as to overlap with at least a part of the first metal layer that is exposed from the first face as viewed from a direction approximately perpendicular to the first face. The electrode pad is provided on the first face so as to cover the member and is electrically connected to the columnar electrode member.
1 . A semiconductor device, comprising:
an insulation member having a first face;
a columnar electrode penetrating the insulation member in a direction approximately perpendicular to the first face, the columnar electrode having a columnar electrode member and a first metal layer of at least one layer which covers an outer circumference of the columnar electrode member and which extends until becoming exposed from the first face;
a member which is provided on the first face and which is arranged so as to overlap with at least a part of the first metal layer that is exposed from the first face as viewed from a direction approximately perpendicular to the first face; and
an electrode pad which is provided on the first face so as to cover the member and which is electrically connected to the columnar electrode member,
wherein the member is annular in shape as viewed from the direction,
an outer diameter of the member is smaller than an outer diameter of the electrode pad,
the columnar electrode includes, at an upper end thereof, a depression having a side face being the first metal layer and a bottom being the columnar electrode member, and
the electrode pad extends to an inside of the depression so as to be electrically connected to the columnar electrode member.
2 . A semiconductor device, comprising:
an insulation member having a first face;
a columnar electrode penetrating the insulation member in a direction approximately perpendicular to the first face, the columnar electrode having a columnar electrode member and a first metal layer of at least one layer which covers an outer circumference of the columnar electrode member and which extends until becoming exposed from the first face;
a member which is provided on the first face and which is arranged so as to overlap with at least a part of the first metal layer that is exposed from the first face as viewed from a direction approximately perpendicular to the first face; and
an electrode pad which is provided on the first face so as to cover the member and which is electrically connected to the columnar electrode member,
wherein the member is annular in shape as viewed from the direction,
an outer diameter of the member is smaller than an outer diameter of the electrode pad, and
the member is arranged so as not to overlap with at least a part of the columnar electrode as viewed from a direction approximately perpendicular to the first face.
3 . The semiconductor device according to claim 1 , wherein
a material of the member differs from a material of the columnar electrode member.
4 . The semiconductor device according to claim 1 , wherein
a metal or an organic substance is used as a material of the member.
5 . The semiconductor device according to claim 4 , wherein
a metal as a material of the member includes Ni, Co, Au, Ag, Pd, Rh, Pt, In, or Sn, and
an organic substance as a material of the member includes PI (Polyimide).
6 . The semiconductor device according to claim 1 , wherein
an organic substance including a filler or an inorganic substance is used as a material of the insulation member.
7 . The semiconductor device according to claim 1 , wherein
a precious metal is used as a material of the first metal layer.
8 . The semiconductor device according to claim 1 , further comprising
a second metal layer of at least one layer that covers the electrode pad.
9 . The semiconductor device according to claim 2 , wherein
a material of the member differs from a material of the columnar electrode member.
10 . The semiconductor device according to claim 2 , wherein
a metal or an organic substance is used as a material of the member.
11 . The semiconductor device according to claim 10 , wherein
a metal as a material of the member includes Ni, Co, Au, Ag, Pd, Rh, Pt, In, or Sn, and
an organic substance as a material of the member includes PI (Polyimide).
12 . The semiconductor device according to claim 2 , wherein
an organic substance including a filler or an inorganic substance is used as a material of the insulation member.
13 . The semiconductor device according to claim 2 , wherein
a precious metal is used as a material of the first metal layer.
14 . The semiconductor device according to claim 2 , further comprising
a second metal layer of at least one layer that covers the electrode pad.