Semiconductor package
A semiconductor package includes a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an insulating layer, and first, second, and third redistribution patterns disposed in the insulating layer. The first to third redistribution patterns are sequentially stacked in an upward direction and are electrically connected to each other. Each of the first to third redistribution patterns includes a wire portion that extends parallel to the top surface of the redistribution substrate. Each of the first and third redistribution patterns further includes a via portion that extends from the wire portion in a direction perpendicular to the top surface of the redistribution substrate. The second redistribution pattern further includes first fine wire patterns that are less wide than the wire portion of the second redistribution pattern.
1 . A method of manufacturing a semiconductor package, the method comprising:
forming a first redistribution pattern, a second redistribution pattern and an under-bump pattern on a first carrier substrate,
inverting the semiconductor package;
forming a first release layer on a second carrier substrate; and
mounting the inverted semiconductor package in the first release layer,
wherein the first redistribution pattern is formed after forming the second redistribution pattern,
wherein the second redistribution pattern includes a first wire portion and first fine wire patterns,
a width of the first fine wire patterns is less than a width of the first wire portion, and
wherein forming the second redistribution pattern includes:
forming a second seed layer on the first carrier substrate;
forming a first conductive layer on the second seed layer; and
forming a second seed pattern and a second conductive pattern on the second seed pattern by etching the second seed layer using the first conductive layer as a mask.
2 . The method of claim 1 , wherein forming the first conductive layer includes:
forming a first resist pattern on the second seed layer;
forming a first opening that exposes a top surface of the second seed layer in the first resist pattern; and
performing an electroplating process using the second seed layer as an electrode in the first opening.
3 . The method of claim 1 , wherein forming the first redistribution pattern includes:
forming a second insulating layer on the second redistribution pattern;
forming a first hole by performing a patterning process on the second insulating layer;
forming a second seed pattern on the first hole and a top surface of the second insulating layer; and
forming a second conductive pattern on the second seed pattern.
4 . The method of claim 3 , wherein a diameter of an upper portion of the first hole is larger than a diameter of a lower portion of the first hole.
5 . The method of claim 3 , wherein an angle between a bottom and side surfaces of the first hole ranges from 95° to 135°.
6 . The method of claim 1 , wherein forming the under-bump pattern includes:
forming a second insulating layer on the second redistribution pattern;
forming a second hole by performing a patterning process on the second insulating layer; and
forming the under-bump pattern to fill the second hole.
7 . The method of claim 1 , further comprising forming a conductive terminal on the under-bump pattern.
8 . The method of claim 7 , furthering comprising forming a third redistribution pattern on the second redistribution pattern,
wherein forming the third redistribution pattern includes:
forming a third insulating layer on the second redistribution pattern;
forming a third hole by performing a patterning process on the third insulating layer;
forming a third seed pattern on the third hole and a top surface of the third insulating layer; and
forming a third conductive pattern on the third seed pattern,
wherein a diameter of an upper portion of the third hole is larger than a diameter of a lower portion of the third hole.
9 . The method of claim 8 , wherein an angle between a bottom and side surfaces of the third hole ranges from 95° to 135°.
10 . The method of claim 1 , wherein a distance between adjacent first fine wire patterns ranges from 0.5 μm to 2 μm.
11 . A method of manufacturing a semiconductor package, the method comprising:
forming a preliminary semiconductor package by forming a first redistribution pattern, a second redistribution pattern and an under-bump pattern sequentially on a first carrier substrate;
inverting the preliminary semiconductor package; and
forming a third redistribution pattern on the first redistribution pattern,
wherein the first redistribution pattern includes a first wire portion and first fine wire patterns,
a width of the first fine wire patterns is less than a width of the first wire portion,
wherein forming the second redistribution pattern includes:
forming a first insulating layer on the first redistribution pattern;
forming a first hole by performing a patterning process on the first insulating layer; and
forming a second seed pattern and a second conductive pattern on the first hole and a top surface of the first insulating layer,
wherein forming the third redistribution pattern includes:
forming a second insulating layer on the first redistribution pattern;
forming a second hole by performing a patterning process on the second insulating layer; and
forming a second seed pattern and a second conductive pattern on the second hole and a top surface of the second insulating layer,
wherein a diameter of an upper portion of the first hole is larger than a diameter of a lower portion of the first hole, and
a diameter of an upper portion of the second hole is larger than a diameter of a lower portion of the second hole.
12 . The method of claim 11 , wherein
an angle between a bottom and side surfaces of the first hole ranges from 95° to 135°, and
an angle between a bottom and side surfaces of the second hole ranges from 95° to 135°.
13 . The method of claim 11 , forming the first redistribution pattern includes:
forming a first seed layer on the first carrier substrate;
forming a first conductive layer on the first seed layer; and
forming a third seed pattern and a third conductive pattern on the third seed pattern by etching the first seed layer using the first conductive layer as a mask.
14 . The method of claim 11 , wherein a distance between adjacent first fine wire patterns ranges from 0.5 μm to 2 μm.
15 . A method of manufacturing a semiconductor package, the method comprising:
forming a first redistribution pattern, a second redistribution pattern and an under-bump pattern sequentially on a first carrier substrate;
forming a preliminary semiconductor package by forming a conductive terminal on the under-bump pattern;
inverting the preliminary semiconductor package;
forming a first release layer on a second carrier substrate;
mounting the inverted semiconductor package in the first release layer;
forming a third redistribution pattern and a fourth redistribution pattern sequentially on the first redistribution pattern; and
forming a boning pad on the fourth redistribution pattern,
wherein the first redistribution pattern includes a first wire portion and first fine wire patterns,
a width of the first fine wire patterns is less than a width of the first wire portion, and
wherein forming the first redistribution pattern includes:
forming a first seed layer on the first carrier substrate;
forming a first resist pattern on the first seed layer;
forming a first opening that exposes a top surface of the first seed layer in the first resist pattern;
performing an electroplating process using the first seed layer as an electrode in the first opening; and
forming a first seed pattern and a first conductive pattern on the first seed pattern by etching the first seed layer using the first conductive layer as a mask.
16 . The method of claim 15 , wherein forming the second redistribution pattern includes:
forming a first insulating layer on the first redistribution pattern;
forming a first hole by performing a patterning process on the first insulating layer;
forming a second seed pattern on the first hole and a top surface of the first insulating layer; and
forming a second conductive pattern on the second seed pattern, and
wherein a diameter of an upper portion of the first hole is larger than a diameter of a lower portion of the first hole.
17 . The method of claim 16 , wherein an angle between bottom and side surfaces of the first redistribution pattern is smaller than an angle between top and side surfaces of the first hole.
18 . The method of claim 15 , wherein forming the third redistribution pattern includes:
forming a third insulating layer on the first redistribution pattern;
forming a third hole by performing a patterning process on the third insulating layer;
forming a third seed pattern on the third hole and a top surface of the third insulating layer; and
forming a third conductive pattern on the third seed pattern,
wherein a diameter of an upper portion of the third hole is larger than a diameter of a lower portion of the third hole.
19 . The method of claim 15 , wherein a distance between adjacent first fine wire patterns ranges from 0.5 μm to 2 μm.