IP Library › Granted Patent US 12679733
Granted Patent B2
US 12679733 · App. 17/795,161 · Granted Jul 14, 2026

Fullerene derivative, fullerene derivative production method, deposit, film, and electronic device

Inventor: Yutaka Matsuo (Aichi, JP)
Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM; MITSUBISHI CORPORATION
C01B32/156C01B32/152H10K50/16H10K85/211H10K85/50H10K30/50
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Quick Facts
Patent No.
US 12679733
App. No.
17/795,161
Granted
Jul 14, 2026
Kind
B2
Abstract

A fullerene derivative has a structure of formula (1) or formula (2): wherein Ar is a substituted or unsubstituted aromatic ring, * is a carbon atom at the point of attachment to a fullerene core, X is O, S, Se, or Te, and R is an organic group.

Claims (6)

1 . A fullerene derivative having a structure of formula (2e):

wherein * is a carbon atom at the point of attachment to a fullerene core.

2 . A method for producing a deposit, comprising a step of heating the fullerene derivative according to claim 1 to a temperature equal to or higher than sublimation temperature to deposit the fullerene derivative.

3 . A film comprising the fullerene derivative according to claim 1 .

4 . An electron acceptor comprising the fullerene derivative according to claim 1 .

5 . An electron transport material comprising the fullerene derivative according to claim 1 .