Ceramic component and method of manufacturing ceramic component

1 . A ceramic component comprising:

a boron carbide material; and

a surface having a first spot and a second spot having a different distance from a center of the surface,

wherein the ceramic component comprises a focus ring of a plasma etching equipment,

wherein the ceramic component comprises boron and carbon in an amount of 90 mol % or more, and

wherein a difference between a first residual stress measured at the first spot and a second residual stress measured at the second is −600 to +600 MPa, such that etching resistance and impact resistance of the focus ring are increased.

2 . The ceramic component of claim 1 , wherein a difference between a maximum value and a minimum value among the first residual stress, the second residual stress, and a third residual stress measured at a third spot on the surface having a different distance from the center of the surface than the first spot and the second spot, is −600 to +600 MPa.

3 . The ceramic component of claim 1 , wherein the ceramic component is a part of a device for manufacturing a semiconductor element.

4 . The ceramic component of claim 1 ,

wherein the ceramic component comprises a main body having a first height from a reference plane and a mounting body having a second height from the reference plane, and

wherein the surface of the ceramic component comprises an upper surface of the main body and an upper surface of the mounting body, and

wherein the first spot is disposed on the upper surface of the main body and the second spot is disposed on the upper surface of the mounting body.

5 . A focus ring of a plasma etching equipment, the focus ring comprising:

a boron carbide material;

a main body having a first height from a reference plane and a main body residual stress measured on an upper surface of the main body; and

a mounting body having a second height from the reference plane and a mounting body residual stress measured on an upper surface of the mounting body,

wherein the upper surface of the main body is etched by plasma and an etching target is mounted on the upper surface of the mounting body, and

wherein a difference between the main body residual stress and the mounting body residual stress is within 40% of an average of the main body residual stress and the mounting body residual stress, such that the etching resistance and impact resistance of the focus ring are increased.

6 . The focus ring of claim 5 , wherein the difference of the main body residual stress and the mounting body residual stress is −600 to +600 MPa.

7 . The focus ring of claim 5 , wherein a standard deviation of residual stresses measured at three spots on the upper surface of the main body and the upper surface of the mounting body having different distances from a center of the focus ring is 350 MPa or less.

8 . The focus ring of claim 5 , further comprising a connecting body between the main body and the mounting body, wherein the connecting body comprises an upper surface connecting the upper surface of the mounting body and the upper surface of the main body.

9 . The focus ring of claim 8 , wherein a difference between a maximum value and a minimum value among the main body residual stress, the mounting body residual stress, and a connecting body residual stress measured at a spot on the upper surface of the connecting body is within 25% of an average of the main body residual stress, the mounting body residual stress, and the connecting body residual stress.

10 . The focus ring of claim 5 , wherein the focus ring has a bending strength of 300 MPa or more.

11 . The focus ring of claim 5 , wherein the focus ring is a part of a device for manufacturing a semiconductor element.