Amine-based compositions for use in CMP with high polysilicon rate

Inventors: Julianne Truffa (Aurora, IL); Brittany Johnson (Aurora, IL); Alexander W. Hains (Aurora, IL); Elliot Knapton (Aurora, IL); Brian Reiss (Aurora, IL)

Assignee: CMC MATERIALS LLC

C09G1/02 H10P52/402 H10P52/403

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Quick Facts

Patent No.: US 12679997
App. No.: 17/985,021
Granted: Jul 14, 2026
Kind: B2

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Abstract

The invention provides a chemical-mechanical polishing composition comprising: (a) silica abrasive; (b) an amine-based compound, wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1:1 to about 3:1; (c) optionally a buffer; and (d) water, wherein the polishing composition has a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising polysilicon, using the inventive polishing composition.

Claims (18)

1 . A chemical-mechanical polishing composition comprising:

(a) silica abrasive;

(b) an amine-based compound, wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1:1 to about 3:1;

(d) water,

wherein the polishing composition has a pH of about 9 to about 12, and wherein the polishing composition further comprises about 50 ppm to about 1000 ppm of a complexing agent.

2 . The polishing composition of claim 1 , wherein the polishing composition comprises about 0.001 wt. % to about 10 wt. % of silica abrasive.

3 . The polishing composition of claim 2 , wherein the polishing composition comprises about 0.1 wt. % to about 5 wt. % of silica abrasive.

4 . The polishing composition of claim 1 , wherein the polishing composition has a pH of about 10 to about 11.

5 . The polishing composition of claim 1 , wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1:1 to about 2:1.

6 . The polishing composition of claim 5 , wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1.2:1 to about 1.8:1.

7 . The polishing composition of claim 1 , wherein the amine-based compound comprises a carbon to nitrogen ratio of about 2:1 to about 3:1.

8 . The polishing composition of claim 1 , wherein the amine-based compound has a molecular weight of about 80 g/mol to about 400 g/mol.

9 . The polishing composition of claim 8 , wherein the amine-based compound has a molecular weight of about 120 g/mol to about 250 g/mol.

10 . The polishing composition of claim 1 , wherein the amine-based compound comprises at least one ethylenediamine subunit.

11 . The polishing composition of claim 1 , wherein the amine-based compound comprises at least three ethylenediamine subunits.

12 . The polishing composition of claim 1 , wherein the amine-based compound is selected from ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, hexaethyleneheptamine, heptaethyleneoctylamine, octaethylenenonylamine, tris(2-aminoethyl)amine, piperazine, homopiperazine, N,N-diethylethylenediamine, 1,3-diamino-2-propanol, N,N,N′,N″,N″-pentamethyldiethylenetriamine, N,N′-dimethylethylenediamine, N,N-dimethylethylenediamine, 1-(2-aminoethyl) piperazine, 1,4-bis(3-aminopropyl) piperazine, aminoethylpiperazine, and combinations thereof.

13 . The polishing composition of claim 1 , wherein the polishing composition comprises about 100 ppm to about 5000 ppm of the amine-based compound.