IP Library Granted Patent US 12679998
Granted Patent B2
US 12679998 · App. 18/409,653 · Granted Jul 14, 2026

Soluble metal oxide anion CMP slurry

Inventors: Yi Guo (Newark, DE); Arthur W. Martin (Hockessin, DE)
Assignee: DuPont Electronic Materials Holding, Inc.
C09G1/02C09G1/04H10P52/402H10P52/403H10P95/04
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Quick Facts
Patent No.
US 12679998
App. No.
18/409,653
Granted
Jul 14, 2026
Kind
B2
Abstract

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates comprising: a solvent; at least one abrasive with a Mohs hardness of at least 8; and at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.

Claims (13)

1 . A chemical mechanical polishing solution for metal and metal nitride substrates comprising:

a solvent;

functionalized carbon-based particles having oxygen-containing functional groups, the functionalized carbon-based particles having oxygen-containing functional groups react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles, the functionalized carbon-based particles containing at least 10 weight percent of an sp3-containing structure, wherein the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and wherein a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01; and

at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.

2 . The polishing solution of claim 1 , wherein the soluble metal oxide anion is selected from the group consisting of molybdic acid, silicomolybdic acid and phosphomolybdic acid.

3 . The polishing solution of claim 1 wherein the oxygen-containing functional group is a COOH and its salts, COOOH and its salts, OH—, ketone, oxirane or a combination thereof.

4 . The polishing solution of claim 1 , wherein the metal and metal nitride is selected from the group consisting of cobalt, copper, molybdenum, tungsten, titanium nitride and tantalum nitride.

5 . The polishing solution of claim 1 , further comprising an oxidizer, wherein the oxidizer is hydrogen peroxide and contains less than contained less than 0.1 μM hydroxyl radical.

6 . The polishing solution of claim 1 , wherein the polishing solution is iron free.

7 . The polishing solution of claim 1 , wherein the soluble metal oxide anion is molybdic acid.

8 . The polishing solution of claim 1 , wherein the functionalized carbon-based particles contain at least 30 weight percent sp3-containing structure.

9 . The polishing solution of claim 1 further comprising at least one abrasive with a Mohs hardness of at least 8.

10 . The polishing solution of claim 9 , wherein the at least one abrasive is selected from alumina, boron nitride, silicon carbide, diamond, and mixtures thereof.