Slurry composition for final polishing of silicon wafer for reducing number of surface defects and haze and final polishing method using same
The present invention relates to: a slurry composition for final polishing of a silicon wafer, which reduces haze and the number of defects in the surface of an object to be polished and has excellent performance; and a final polishing method using same, the slurry composition comprising 1-20 wt % of colloidal silica as abrasive particles, 0.03-0.5 wt % of a surfactant, 0.1-10 wt % of a pH adjuster, 0.02-2 wt % of a water-soluble thickener, 0.05-0.2 wt % of a chelating agent, and 0.1-1 wt % of an organic base.
1 . A slurry composition for final polishing of a silicon wafer for reducing surface defects and haze, the slurry composition comprising:
colloidal silica as abrasive particles;
a surfactant;
a pH adjuster;
a water-soluble thickener;
a chelating agent;
a polishing accelerator; and
the balance being water,
wherein the slurry composition comprises, based on the total weight:
1 to 20 wt % of the colloidal silica;
0.03 to 0.5 wt % of the surfactant that is PEO-methacrylate having a structure represented by Formula 2;
0.1 to 10 wt % of the pH adjuster;
0.02 to 2 wt % of the water-soluble thickener;
0.05 to 0.2 wt % of the chelating agent;
0.1 to 1 wt % of the polishing accelerator that is an organic base that is tris(2-hydroxyethyl)methylammonium hydroxide (THEMAH) having a structure represented by Formula 1; and
the remaining percent by weight of the water,
(in Formula 2, n is in a range of 7 to 22).
2 . The slurry composition of claim 1 , wherein the slurry composition has a pH value of 10.5 to 12.
3 . The slurry composition of claim 1 , wherein the colloidal silica has a particle size of 30 to 70 nm.