Underfill film for semiconductor package and method for manufacturing semiconductor package using same

1 . An underfill film for a semiconductor package, comprising:

a base; and

an adhesive layer disposed on one surface of the base and having a lowest melt viscosity of 3000 Pa·s or less at 160 to 170° C.,

wherein the adhesive layer is a cured product of an adhesive resin composition comprising: (a) an epoxy resin containing a liquid epoxy resin, a phenoxy resin, and a multifunctional epoxy resin; (b) an acid anhydride curing agent; (c) a nitrogen (N)-containing heterocyclic compound; and (d) a filler,

wherein the phenoxy resin is a compound represented by the following Chemical Formula 1:

wherein, in Chemical Formula 1,

a and b are each an integer of 1 to 4;

a plurality of R 1 and a plurality of R 2 are the same as or different from each other and are each independently selected from the group consisting of hydrogen, halogen, a C 1 -C 10 alkyl group, a C 3 -C 20 cycloalkyl group, a C 5 -C 20 aryl group and a nitro group;

R 3 to R 8 are the same as or different from each other and are each independently hydrogen or a hydroxy group, provided that at least one of R 3 to R 8 is a hydroxy group;

X 1 is a single bond or a C 1 -C 10 alkylene group;

Y 1 and Y 2 are the same as or different from each other and are each independently hydrogen, a hydroxy group, or an epoxy group, provided that at least one of Y 1 and Y 2 is an epoxy group; and

n is an integer of 30 to 400, and

wherein the N-containing heterocyclic compound is at least one selected from the group consisting of a compound represented by Chemical Formula 2 and a compound represented by Chemical Formula 3:

wherein in Chemical Formulas 2 and 3,

n1 is 1 or 2;

n2 is an integer of 0 to 2;

X 1 to X 6 are the same as or different from each other and are each independently N or C(R 1 ), provided that at least one of X 1 to X 6 is N;

Y 1 to Y 6 are the same as or different from each other and are each independently N(R 2 ) or C(R 3 )(R 4 ), provided that at least one of Y 1 to Y 6 is N(R 2 );

a plurality of C(R 1 ) are the same as or different from each other, a plurality of N(R 2 ) are the same as or different from each other, and a plurality of C(R 3 )(R 4 ) are the same as or different from each other; and

R 1 , R 2 , R 3 , and R 4 are each independently selected from the group consisting of hydrogen, deuterium (D), halogen, a cyano group, a nitro group, a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, and a C 2 -C 20 alkynyl group.

2 . The underfill film of claim 1 , wherein when the adhesive layer is disposed between a semiconductor chip with bumps and a package substrate with bonding pads, followed by compression under conditions of 200° C., 30-100 N, and 1-3 seconds, a void area percentage of the adhesive layer is 1% or less per m 2 .

3 . The underfill film of claim 2 , wherein the thickness of the adhesive layer is in a range of 80 to 120% of an interval between the semiconductor chip and the package substrate.

4 . The underfill film of claim 1 , wherein an onset temperature on differential scanning calorimetry (DSC) is in the range of 160 to 220° C.

5 . The underfill film of claim 1 , wherein the adhesive resin composition contains, relative to a total weight thereof,

40 to 80 wt % of the epoxy resin,

5 to 20 wt % of the curing agent,

0.01 to 5 wt % of the N-containing heterocyclic compound, and

10 to 50 wt % of the filler.

6 . The underfill film of claim 1 , wherein the liquid epoxy resin, the phenoxy resin, and the multifunctional epoxy resin are contained at a weight ratio of 1:1-3:1-3.

7 . A method for manufacturing a semiconductor package, the method comprising:

compressing the adhesive layer of the underfill film of claim 1 on bumps of a semiconductor chip with the bumps;

aligning the bumps of the semiconductor chip, on which the adhesive layer has been compressed, with bonding pads of a package substrate, the bonding pads being included in regions corresponding to positions of the bumps;

melting the bumps of the semiconductor chip to connect the semiconductor chip to the package substrate; and

curing the adhesive layer disposed between the connected semiconductor chip and package substrate.

8 . The method of claim 7 , wherein the aligning between the bumps and the bonding pads is performed by compression under conditions of 200° C., 30-100 N, and 1-3 seconds, and

a void area percentage in the adhesive layer is 1% or less after the compressing.

9 . The method of claim 8 , wherein the void area percentage in the adhesive layer is 0.5% or less after the melting of the bumps.

10 . The method of claim 7 , wherein the curing temperature of the adhesive layer is in a range of 170 to 250° C.

11 . The method of claim 7 , wherein a thickness of the adhesive layer is in a range of 80 to 120% of the interval between the semiconductor chip and the package substrate.

12 . The method of claim 7 , wherein the adhesive resin composition contains, relative to a total weight thereof,

40 to 80 wt % of the epoxy resin,

5 to 20 wt % of the curing agent,

0.01 to 5 wt % of the N-containing heterocyclic compound, and

10 to 50 wt % of the filler.

13 . The method of claim 7 , wherein the liquid epoxy resin, the phenoxy resin, and the multifunctional epoxy resin are contained at a weight ratio of 1:1-3:1-3.