Quantum dots material solution, method of forming quantum dots layer, and array substrate, display panel, and method of fabricating display panel

1 . A quantum dots material solution, comprising:

a quantum dots material;

a ligand chelated to the quantum dots material;

a first material capable of generating, upon a first irradiation, a quencher quenching the quantum dots material; and

a second material capable of at least partially converting the quantum dots material in a plurality of block regions from a first form into a second form;

wherein the quantum dots material in the second form has a lower solubility in a developing solution than the quantum dots material in the first form.

2 . The quantum dots material solution of claim 1 , wherein the first material comprises a photoacid generator, and the quencher comprises a hydrogen ion.

3 . The quantum dots material solution of claim 2 , wherein the photoacid generator comprises a material selected from a group consisting of a triazine compound, an onium salt compound, and a benzenesulfonate compound.

4 . The quantum dots material solution of claim 1 , wherein the second material is capable of, upon a second irradiation, undergoing a reaction to convert the quantum dots material from the first form into the second form.

5 . The quantum dots material solution of claim 4 , wherein, upon the second irradiation, the second material is capable of reacting with the ligand to form a reacted ligand, which is released from the quantum dots material.

6 . The quantum dots material solution of claim 1 , wherein the ligand comprises a sulfur-containing chelating group, a nitrogen-containing chelating group, an oxygen-containing chelating group, a phosphorus-containing chelating group, or any combination thereof.

7 . The quantum dots material solution of claim 1 , wherein the ligand is a material selected from a group consisting of an oleic acid, an oleylamine, a trioctylphosphine, a trioctylphosphine oxide, and a dodecanethiol.

8 . The quantum dots material solution of claim 1 , wherein the second material is an alkene compound or an alkyne compound.

9 . A method of forming a quantum dots layer, comprising:

forming a quantum dots material layer comprising a first material;

patterning the quantum dots material layer to form a plurality of quantum dots blocks in a plurality of block regions, respectively;

converting the first material in an inter-block region into a quencher; and

allowing the quencher to quench residual quantum dots material in the inter-block region, thereby forming the quantum dots layer.

10 . The method of claim 9 , wherein forming the quantum dots material layer comprises disposing a quantum dots material solution comprising the first material.

11 . The method of claim 9 , wherein the first material comprises a photoacid generator, and the quencher comprises a hydrogen ion.

12 . The method of claim 9 , wherein converting the first material comprises irradiating the inter-block region.

13 . The method of claim 9 , wherein patterning the quantum dots material layer comprises:

at least partially converting the quantum dots material in the plurality of block regions from a first form into a second form; and

developing the quantum dots material layer.

14 . The method of claim 13 , wherein developing the quantum dots material layer is performed using a developing solution;

wherein the quantum dots material in the second form has a lower solubility in the developing solution than the quantum dots material in the first form.

15 . The method of claim 13 , wherein at least partially converting the quantum dots material comprises at least partially removing ligands chelated to the quantum dots material in the plurality of block regions.

16 . The method of claim 13 , wherein at least partially converting the quantum dots material comprises irradiating the plurality of block regions;

the quantum dots material layer further comprises a second material; and

upon irradiating the plurality of block regions, the second material undergoes a reaction to convert the quantum dots material in the plurality of block regions from the first form into the second form.

17 . The method of claim 16 , wherein upon irradiating the plurality of block regions, the second material reacts with a ligand of the quantum dots material to form a reacted ligand, the reacted ligand being released from the quantum dots material.

18 . A method of fabricating a display panel, comprising forming the quantum dots layer according to the method of claim 9 ;

wherein the method of fabricating the display panel comprises:

forming a first quantum dots material layer comprising the first material on a base substrate;

patterning the first quantum dots material layer to form a plurality of first quantum dots blocks in a plurality of first block regions, respectively;

converting the first material in a first sub-region of the inter-block region into a quencher; and

allowing the quencher to quench first residual quantum dots material in the first sub-region, thereby forming the first quantum dots layer;

subsequent to forming the first quantum dots layer, the method further comprises:

forming a second quantum dots material layer comprising the first material on the base substrate;

patterning the second quantum dots material layer to form a plurality of second quantum dots blocks in a plurality of second block regions, respectively;

converting the first material in a second sub-region of the inter-block region into a quencher; and

allowing the quencher to quench second residual quantum dots material in the second sub-region, thereby forming the second quantum dots layer;

subsequent to forming the second quantum dots layer, the method further comprises:

forming a third quantum dots material layer comprising the first material on the base substrate;

patterning the third quantum dots material layer to form a plurality of third quantum dots blocks in a plurality of third block regions, respectively;

converting the first material in a third sub-region of the inter-block region into a quencher; and

allowing the quencher to quench third residual quantum dots material in the third sub-region, thereby forming the third quantum dots layer.