IP Library Granted Patent US 12680053
Granted Patent B2
US 12680053 · App. 17/917,004 · Granted Jul 14, 2026

Method for manufacturing a resist pattern using an aqueous cleaning solution comprising a C4-C12 alkylcarboxylic acid

Inventors: Kazuma Yamamoto (Kakegawa, JP); Tomoyasu Yashima (Kakegawa, JP); Maki Ishii (Kakegawa, JP)
Assignee: Merck Patent GmbH
C11D3/2079C11D3/044C11D17/0008G03F7/0392G03F7/2004G03F7/40C11D2111/22
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Quick Facts
Patent No.
US 12680053
App. No.
17/917,004
Granted
Jul 14, 2026
Kind
B2
Abstract

[Problem] To provide an electronic device manufacturing aqueous solution, which makes it possible to prevent pattern collapse or suppress non-uniformity of resist pattern width. [Means for Solution] An electronic device manufacturing aqueous solution comprising an alkylcarboxylic acid compound (A) and a solvent (B), wherein the alkylcarboxylic acid compound (A) is represented by the formula (a): A 1 -COOH (a), wherein A 1 is C 4-12 alkyl, and the solvent (B) comprises water.

Claims (24)

1 . A method for manufacturing a resist pattern comprising the following steps:

(1) applying a photosensitive resin composition on a substrate with or without one or more intervening layers, to form a photosensitive resin layer;

(2) exposing the photosensitive resin layer to radiation;

(3) developing the exposed photosensitive resin layer; and

(4) cleaning the developed layer with a resist pattern cleaning liquid comprising

an alkylcarboxylic acid compound (A); and

a solvent (B), wherein the content of the solvent (B) is 80 to 99.99 mass %, based on the resist pattern cleaning liquid,

wherein

the alkylcarboxylic acid compound (A) is represented by the formula (a):

A 1 -COOH  (a)

where A 1 is C 4-12 alkyl and the solvent (B) comprises water, wherein the content of water contained in the solvent (B) is 80 to 99.99 mass %, based on the resist pattern cleaning liquid.

2 . The method for manufacturing a resist pattern according to claim 1 , wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition.

3 . The method for manufacturing a resist pattern according to claim 1 , wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition, and exposure is performed using extreme ultraviolet ray.

4 . The method for manufacturing a resist pattern according to claim 1 , wherein the minimum space size of the resist pattern in one circuit unit is 10 to 30 nm.

5 . A method for manufacturing a device, comprising the method for manufacturing a resist pattern according to claim 1 .

6 . The method for manufacturing a device which comprises etching the resist pattern manufactured by the method according to claim 1 as a mask, and processing a substrate.

7 . The method for manufacturing a device according to claim 6 , further comprising forming a wiring on a processed substrate.

8 . The method for manufacturing a resist pattern according to claim 1 , wherein the resist pattern cleaning liquid further comprises a hydroxy-containing compound (C).

9 . The method for manufacturing a resist pattern according to claim 8 , wherein the content of the alkylcarboxylic acid compound (A) is 0.01 to 10 mass %, based on the electronic device manufacturing aqueous solution.

10 . The method for manufacturing a resist pattern according to claim 1 , wherein the resist pattern cleaning liquid further comprises a surfactant (D).

11 . The method for manufacturing a resist pattern according to claim 10 , where the resist pattern cleaning liquid further comprises an additive (E), wherein the additive (E) comprises an acid, a base, a germicide, an antibacterial agent, a preservative, a fungicide, or any combination of any of these.

12 . The method for manufacturing a resist pattern according to claim 11 , wherein the additive (E) comprises a base;

the content of the surfactant (D) is 0.01 to 5 mass %, based on the resist pattern cleaning liquid; or

the content of the additive (E) is 0.0001 to 10 mass %, based on the resist pattern cleaning liquid.