Nozzle cleaning method, substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

1 . A cleaning method comprising:

(a) performing a first cycle comprising:

(a1) supplying a source gas to a substrate located inside a chamber through a hole provided in a first nozzle; and

(a2) supplying a reactive gas to the substrate through a hole provided in a second nozzle;

(b) after (a), unloading the substrate from the chamber;

(c) after (b), cleaning an inside of the chamber so that an accumulated film in the chamber is removed, wherein (c) comprises:

(c1) supplying a cleaning gas containing fluorine into the chamber through a plurality of nozzles in the chamber, wherein the plurality of nozzles comprises at least the first nozzle and the second nozzle, each of the plurality of nozzles including a plurality of holes through which the cleaning gas is supplied into the chamber; and

(c2) supplying a gas containing nitrogen and oxygen into the chamber through at least one hole provided in each of the plurality of nozzles;

(d) after (c), supplying a mixed gas of a hydrogen gas and an oxygen gas into the chamber through the plurality of holes of each of the plurality of nozzles;

(e) after (d), loading a subsequent substrate into the chamber; and

(f) after (e), performing a second cycle comprising:

f1) supplying the source gas to the subsequent substrate in the chamber through the hole provided in the first nozzle; and

(f2) supplying the reactive gas to the subsequent substrate through the hole provided in the second nozzle,

wherein a temperature in the chamber in (d) is higher than a temperature in the chamber in (c).

2 . The cleaning method of claim 1 , wherein, in (c), (c1) and (c2) are alternately performed.

3 . The cleaning method of claim 1 , further comprising:

(g) heating the first nozzle by a heater in (d) such that the mixed gas is activated in the first nozzle.

4 . The cleaning method of claim 1 , further comprising:

heating the mixed gas of the hydrogen gas and the oxygen gas by a heater provided outside the chamber.

5 . A method of manufacturing a semiconductor device comprising:

the cleaning method of claim 1 ,

wherein, in (f), the semiconductor device is manufactured on the subsequent substrate.

6 . The cleaning method of claim 1 , wherein, in (c1), the cleaning gas is at least partially simultaneously supplied through the plurality of nozzles into the chamber.

7 . The cleaning method of claim 1 , wherein, in (d), supplies of the mixed gas through the plurality of nozzles are simultaneously performed.

8 . The cleaning method of claim 3 , wherein, in (g), the first nozzle is heated such that a temperature of a reaction region of the first nozzle is uniform.

9 . The cleaning method of claim 3 , wherein, in (g), the first nozzle is heated by the heater arranged at a location corresponding to a region in which the substrate is located in the chamber.

10 . The cleaning method of claim 3 , wherein at least one of the heater or the first nozzle is arranged such that at least a region of the first nozzle in which the plurality of holes of the first nozzle are provided faces the heater.

11 . The cleaning method of claim 3 , wherein the heater is divided into a plurality of zones along a flow direction of the source gas in the first nozzle, and further comprising:

(h) changing a temperature of each of the plurality of zones such that a temperature control for each of the plurality of zones is different between in (c) and in (d).

12 . The cleaning method of claim 6 , wherein, in (c1), supplies of the cleaning gas through the plurality of nozzles are simultaneously terminated.

13 . The cleaning method of claim 6 , wherein, in (c1), supplies of the cleaning gas through the plurality of nozzles are simultaneously started.

14 . The cleaning method of claim 11 , wherein, in (d), the temperature control is performed such that temperatures of one or more zones, among the plurality of zones, corresponding to at least a process region of the substrate are substantially the same.

15 . The cleaning method of claim 11 , wherein, in (d), the temperature control is performed such that a temperature of a lower end zone among the plurality of zones is controlled to be higher than those of the other zones among the plurality of zones.

16 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

(a) performing a first cycle comprising:

(a1) supplying a source gas to a substrate in a chamber through a hole provided in a first nozzle; and

(a2) supplying a reactive gas to the substrate through a hole provided in a second nozzle;

(b) after (a), unloading the substrate from the chamber;

(c) after (b), cleaning an inside of a chamber after (a) so that an accumulated film in the chamber is removed, wherein (c) comprises:

(c1) supplying a cleaning gas containing fluorine into the chamber through a plurality of nozzles in the chamber, wherein the plurality of nozzles comprises at least the first nozzle and the second nozzle, each of the plurality of nozzles including a plurality of holes through which the cleaning gas is supplied into the chamber; and

(c2) supplying a gas containing nitrogen and oxygen into the chamber through at least one hole provided in each of the plurality of nozzles;

(d) after (c), supplying a mixed gas of a hydrogen gas and an oxygen gas into the chamber through the plurality of holes provided in each of the plurality of nozzles;

(e) after (d), loading a subsequent substrate into the chamber; and

(f) after (e), performing a second cycle comprising:

(f1) supplying the source gas to the subsequent substrate in the chamber through the hole provided in the first nozzle; and

(f2) supplying the reactive gas to the subsequent substrate through the hole provided in the second nozzle,

wherein a temperature in the chamber in (d) is higher than a temperature in the chamber in (c).