CVD device pumping liner
Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.
1 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber;
flowing a processing gas to the processing chamber;
depositing the material on the work piece;
flowing the processing gas through a plurality of apertures including at least three apertures, the plurality of apertures extending through a pumping liner, the pumping liner defining a circumferential body and the plurality of apertures are disposed around the circumferential body, each of the plurality of apertures including a first portion having a cylindrical shape and a circular cross-section of a same diameter and a second portion having a frustoconical shape and a circular cross-section, the frustoconical shape of the second portion including a smaller-diameter first end and a larger-diameter second end, the first portion extending from the smaller-diameter first end of the frustoconical shape of the second portion, wherein the circumferential body includes an inner circumferential surface, an outer circumferential surface, an upper surface and a lower surface, wherein each of the plurality of apertures are tilted relative to the upper surface, are tilted relative to the lower surface and extend through the body from the inner circumferential surface to the outer circumferential surface, and a spacing between adjacent apertures of the plurality of apertures is unequal and decreases as the apertures approach an outlet port of the processing chamber; and
flowing the processing gas through the outlet port of the processing chamber.
2 . The method of claim 1 , wherein the processing gas includes one or more gases chosen from silane, tetramethyl silane, argon and oxygen.
3 . The method of claim 1 , wherein the spacing between adjacent apertures of a first aperture pair is X degrees (°), and a pitch between adjacent apertures of a second aperture pair different from the first aperture pair satisfies the equation X°−my, wherein m is an integer and y is between 0.1° and 0.4°.
4 . The method of claim 1 , wherein the plurality of apertures comprise a plurality of aperture pairs comprising adjacent apertures, the adjacent apertures of each aperture pair being spaced apart a distance measured along the inner circumferential surface of the pumping liner, the distance between adjacent apertures of the plurality of aperture pairs being unequal.
5 . The method of claim 4 , wherein the plurality of aperture pairs includes a first aperture pair closer to the outlet port than a second aperture pair, the distance for the first aperture pair being lesser than the distance for the second aperture pair.
6 . The method of claim 5 , wherein the distance between adjacent apertures of an aperture pair increases at a regular interval as a distance, measured along an inner circumferential surface of the pumping liner, between the respective aperture pair and the outlet port increases.
7 . The method of claim 1 , wherein the plurality of apertures is 35 to 65 apertures.
8 . The method of claim 1 , wherein the first portion of each of the plurality of apertures have a diameter ranging between 4 mm to 7 mm.
9 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber;
flowing a processing gas to the processing chamber;
depositing the material on the work piece;
flowing the processing gas through a plurality of apertures including at least three apertures, the plurality of apertures extending through a pumping liner, the pumping liner defining a circumferential body having the plurality of apertures, disposed entirely around the circumferential body, through which gas within the processing chamber is exhausted from the processing chamber through an exhaust port, wherein each of the plurality of apertures includes a first portion having a cylindrical shape and a circular cross-section of a same diameter and a second portion having a frustoconical shape and a circular cross-section, the frustoconical shape of the second portion including a smaller-diameter first end and a larger-diameter second end, the first portion extending from the smaller-diameter first end of the frustoconical shape of the second portion, wherein the circumferential body includes an inner circumferential surface, an outer circumferential surface, an upper surface and a lower surface, wherein each of the plurality of apertures are tilted relative to the upper surface, are tilted relative to the lower surface and extend through the body from the inner circumferential surface to the outer circumferential surface, and the distance between adjacent apertures in each pair increases as the measured distance along the outer circumferential surface from the aperture pair to the exhaust port increases; and
flowing the processing gas which has passed through the plurality of apertures through the exhaust port of the processing chamber.
10 . The method of claim 9 , wherein the distance between adjacent apertures of the aperture pair increases at an irregular interval.
11 . The method of claim 9 , wherein a pitch between adjacent apertures of a first aperture pair is X degrees (°) and a pitch between the adjacent apertures of a second aperture pair, adjacent to the first aperture pair, is X° plus 0.05° to 0.5°.
12 . The method of claim 9 , wherein the processing gas includes one or more gases chosen from silane, tetramethyl silane, argon and oxygen.
13 . The method of claim 9 , wherein the first portion of each of the plurality of apertures have a diameter ranging between 4 mm to 7 mm.
14 . The method of claim 9 , where the plurality of apertures is 35 to 65 apertures.
15 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber;
flowing a processing gas to the processing chamber;
depositing the material on the work piece;
flowing the processing gas through a plurality of apertures extending through a pumping liner, the pumping liner defining a circumferential body and the plurality of apertures are disposed around the circumferential body, each of the plurality of apertures including a first portion having a cylindrical shape and a circular cross-section of a same diameter and a second portion having a frustoconical shape and a circular cross-section, the frustoconical shape of the second portion including a smaller-diameter first end and a larger-diameter second end, the first portion extending from the smaller-diameter first end of the frustoconical shape of the second portion, wherein the circumferential body includes an inner circumferential surface, an outer circumferential surface, an upper surface and a lower surface, wherein each of the plurality of apertures are tilted relative to the upper surface, are tilted relative to the lower surface and extend through the body from the inner circumferential surface to the outer circumferential surface, and wherein the plurality of apertures are arranged in pairs, each pair comprising adjacent apertures, wherein the adjacent apertures in each pair are spaced apart by a distance measured along the inner circumferential surface of the pumping liner, and the spacing varies among the aperture pairs, and wherein a first aperture pair is positioned closer to an outlet port than a second aperture pair, with the spacing in the first pair being less than that in the second pair, and
flowing the processing gas which has passed through the plurality of apertures through the outlet port of the processing chamber.
16 . The method of claim 15 , wherein the processing gas includes one or more gases chosen from silane, tetramethyl silane, argon and oxygen.
17 . The method of claim 15 , a spacing between adjacent apertures of the plurality of apertures is unequal.
18 . The method of claim 15 , wherein the first portion of each of the plurality of apertures have a diameter ranging between 4 mm to 7 mm.
19 . The method of claim 15 , wherein a pitch between adjacent apertures of a first aperture pair is X degrees (°) and a pitch between the adjacent apertures of a second aperture pair, adjacent to the first aperture pair, is X° plus 0.05° to 0.5°.
20 . The method of claim 15 , where the plurality of apertures is 35 to 65 apertures.