Chemical solution for removing precious metal, method for manufacturing chemical solution, method for treating substrate, method for manufacturing semiconductor device

1 . A chemical solution for removing a precious metal, the chemical solution consisting of:

a cerium-containing oxidizing agent (A) selected from the group consisting of cerium (IV) ammonium nitrate, cerium (IV) ammonium sulfate, and a hydrate of cerium (IV) ammonium sulfate;

an acid component (B) selected from the group consisting of carbonic acid, formic acid, propionic acid, butyric acid, and sulfonic acid, and salts of these acids; and

water,

wherein a concentration of the acid component (B) is 1.0×10 −4 to 1.0×10 +1 mol/L.

2 . The chemical solution according to claim 1 ,

wherein the precious metal is ruthenium, iridium, or platinum.

3 . The chemical solution according to claim 1 ,

wherein the acid component (B) is sulfonic acid or a salt of sulfonic acid.

4 . The chemical solution according to claim 1 ,

wherein a content of the cerium-containing oxidizing agent (A) is 1.0×10 −4 to 3.0×10 0 mol/L with respect to the volume of the chemical solution.

5 . A method for manufacturing the chemical solution according to claim 1 , the method comprising:

dissolving the cerium-containing oxidizing agent (A) and the acid component (B) in water,

wherein the acid component (B) is dissolved in water to a concentration of 1.0×10 −4 to 1.0×10 +1 mol/L.

6 . A method for treating a substrate, the method comprising:

bringing the chemical solution according to claim 1 into contact with a substrate on which a precious metal is exposed on a surface to remove at least a part of the precious metal from the substrate.

7 . A method for manufacturing a semiconductor device, the method comprising:

treating a substrate by the method for treating a substrate according to claim 6 .