Microbolometer detectors with optical absorber structures for detection of terahertz radiation
A microbolometer pixel unit for detection of terahertz radiation includes a substrate, a thermistor structure, and an optical absorber structure. The thermistor structure includes a plurality of microbolometer pixels disposed on the substrate. Each pixel includes a thermistor platform suspended above the substrate, a thermistor support member holding the thermistor platform, and a thermistor disposed on the thermistor platform and having an electrical resistance that varies in accordance with a temperature of the thermistor. The optical absorber structure includes an absorber platform suspended above the thermistor structure, an absorber support member holding the absorber platform and including a plurality of support elements, each support element providing a thermal conduction path from the absorber platform to the thermistor platform of a respective one of the microbolometer pixels, and an optical absorber disposed on the absorber platform to absorb incoming terahertz radiation to generate heat to change the temperature of the thermistors.
1 . A microbolometer pixel unit for detection of terahertz radiation, comprising:
a substrate;
a thermistor structure comprising a plurality of microbolometer pixels disposed on the substrate, each microbolometer pixel comprising:
a thermistor platform suspended above the substrate;
a thermistor support member holding the thermistor platform; and
a thermistor disposed on the thermistor platform and having an electrical resistance that varies in accordance with a temperature of the thermistor;
and
an optical absorber structure comprising:
an absorber platform extending continuously and suspended above the thermistor structure;
an absorber support member holding the absorber platform and comprising a plurality of support elements, each support element providing a thermal conduction path extending from the thermistor platform of a respective one of the microbolometer pixels to the absorber platform; and
an optical absorber disposed on the absorber platform and configured to absorb incoming terahertz radiation to generate heat to change the temperature of the thermistors of the microbolometer pixels.
2 . The microbolometer pixel unit of claim 1 , wherein the plurality of microbolometer pixels is arranged in an M×N array under the optical absorber structure, wherein M and N each range from 2 to 32.
3 . The microbolometer pixel unit of claim 1 , wherein the thermistor platform of each microbolometer pixel has horizontal dimensions ranging from about 10 μm to about 50 μm.
4 . The microbolometer pixel unit of claim 1 , wherein the absorber platform has horizontal dimensions ranging from about 20 μm to about 320 μm.
5 . The microbolometer pixel unit of claim 1 , wherein the absorber platform has a square shape.
6 . The microbolometer pixel unit of claim 1 , wherein the thermistor of each microbolometer pixel is made of a thermistor material comprising vanadium oxide or amorphous silicon.
7 . The microbolometer pixel unit of claim 1 , wherein each support element of the absorber support member is coupled to a central region of the thermistor platform of the respective one of the microbolometer pixels.
8 . The microbolometer pixel unit of claim 1 , wherein each support element of the absorber support member has a thermal conductance that is larger than a thermal conductance of the thermistor support member of the respective one of the microbolometer pixels.
9 . The microbolometer pixel unit of claim 1 , wherein the optical absorber is configured to absorb the incoming terahertz radiation in a waveband ranging from about 30 micrometers to about 3000 micrometers.
10 . The microbolometer pixel unit of claim 1 , wherein the optical absorber comprises an electrically conductive layer patterned on the absorber platform to form an arrangement of a plurality of absorber elements.
11 . The microbolometer pixel unit of claim 1 , wherein the optical absorber is configured to absorb a first component of the incoming terahertz radiation having a first polarization state more strongly than a second component of the incoming terahertz radiation having a second polarization state orthogonal to the first polarization state.
12 . The microbolometer pixel unit of claim 1 , further comprising a reflector disposed on the substrate and configured to form an optical resonant cavity with the optical absorber for enhancing absorption of the incoming terahertz radiation by the optical absorber.
13 . The microbolometer pixel unit of claim 1 , further comprising a radiation conditioner structure comprising:
a conditioner platform suspended above the optical absorber structure;
a conditioner support member holding the conditioner platform; and
a radiation conditioner disposed on the conditioner platform and configured to spectrally condition the incoming terahertz radiation.
14 . The microbolometer pixel unit of claim 13 , wherein the radiation conditioner comprises an additional optical absorber configured to supplement the optical absorber disposed on the absorber platform.
15 . The microbolometer pixel unit of claim 14 , wherein the optical absorber and the additional optical absorber are configured to have different sensitivities to a state of polarization of the incoming terahertz radiation.
16 . The microbolometer pixel unit of claim 13 , wherein the radiation conditioner comprises a spectral filter configured to filter out unwanted spectral components from the incoming terahertz radiation.
17 . The microbolometer pixel unit of claim 16 , wherein the spectral filter is a low-pass filter.
18 . A microbolometer array comprising a plurality of microbolometer pixel units in accordance with claim 1 .
19 . The microbolometer array of claim 18 , wherein a number of the microbolometer pixel units ranges from about 64×48 to about 1024×768.