Translational mass accelerometer
An example Micro Electro-Mechanical Systems (MEMS) accelerometer device includes a proof mass comprising at least one of one or more isolated conductive coil traces or one or more pick-off combs within the proof mass, the one or more pick-off combs comprising a plurality of pick-off comb tines; a pole-piece layer coupled to the proof mass; and a return-path layer coupled to the proof mass, wherein the at least one of the one or more isolated conductive coil traces or the one or more pick-off combs are formed by selective laser etching.
1 . A Micro Electro-Mechanical Systems (MEMS) accelerometer device comprising:
a proof mass comprising at least one of one or more isolated conductive coil traces or one or more pick-off combs within the proof mass, the one or more pick-off combs comprising a plurality of pick-off comb tines;
a pole-piece layer coupled to the proof mass; and
a return-path layer coupled to the proof mass,
wherein the at least one of the one or more isolated conductive coil traces or the one or more pick-off combs are formed by selective laser etching.
2 . The MEMS accelerometer device of claim 1 , wherein the proof mass comprises the one or more isolated conductive coil traces within the proof mass, and
wherein the one or more isolated conductive coil traces are formed by selective laser etching.
3 . The MEMS accelerometer device of claim 2 , wherein a density of the one or more isolated conductive coil traces within the proof mass is greater than a coil trace density threshold.
4 . The MEMS accelerometer device of claim 1 , wherein the proof mass comprises the one or more pick-off comb traces within the proof mass, and
wherein the one or more pick-off combs are formed by selective laser etching.
5 . The MEMS accelerometer device of claim 4 , wherein a density of the pick-off comb tines of the one or more pick-off combs within the proof mass is greater than a pick-off comb tine density threshold.
6 . The MEMS accelerometer device of claim 1 , wherein the proof mass comprises the one or more isolated conductive coil traces and the one or more pick-off combs, and
wherein the one of the one or more isolated conductive coil traces and the one or more pick-off combs are formed by selective laser etching.
7 . The MEMS accelerometer device of claim 6 , wherein a density of the pick-off comb tines of the one or more pick-off combs within the proof mass is greater than a pick-off comb tine density threshold.
8 . The MEMS accelerometer device of claim 7 , wherein a density of the one or more isolated conductive coil traces within the proof mass is greater than a coil trace density threshold.
9 . The MEMS accelerometer device of claim 6 , wherein a density of the one or more isolated conductive coil traces within the proof mass is greater than a coil trace density threshold.
10 . The MEMS accelerometer device of claim 1 , the proof mass further comprising one or more damping combs within the proof mass, the one or more damping combs comprising a plurality of damping comb tines,
wherein the one or more damping combs are formed by selective laser etching.
11 . The MEMS accelerometer device of claim 10 , wherein a density of the damping comb tines of the one or more damping combs within the proof mass is greater than a damping comb tine density threshold.
12 . The MEMS accelerometer device of claim 1 , wherein the proof mass comprises a quartz substrate.
13 . The MEMS accelerometer device of claim 12 , wherein the quartz substrate is a fused quartz substrate.
14 . A method comprising:
selective laser etching one or more isolated conductive coil traces within a proof mass; and
selective laser etching one or more pick-off combs within the proof mass, the one or more pick-off combs comprising a plurality of pick-off comb tines.
15 . The method of claim 14 , wherein the proof mass comprises a quartz substrate.
16 . The method of claim 15 , wherein the quartz substrate is a fused quartz substrate.
17 . The method of claim 14 , further comprising:
selective laser etching a density of the one or more isolated conductive coil traces within the proof mass greater than a coil trace density threshold.
18 . The method of claim 14 , further comprising:
selective laser etching a density of the pick-off comb tines of the one or more pick-off combs within the proof mass greater than a pick-off comb tine density threshold.
19 . The method of claim 14 , further comprising:
selective laser etching one or more damping combs within the proof mass, the one or more damping combs comprising a plurality of damping comb tines.
20 . The method of claim 19 , further comprising:
selective laser etching a density of the damping comb tines of the one or more damping combs within the proof mass greater than a damping comb tine density threshold.