Semiconductor wafer
A semiconductor wafer includes a scribe line and a probe pad. The scribe line extends along a first direction. The probe pad is disposed on the scribe line and is configured to contact a probe needle. The probe pad includes a first metal layer, a dielectric layer, and a second metal layer. The dielectric layer is disposed on the first metal layer, in which the dielectric layer includes a first recess and a second recess. The second metal layer is configured to connect to the first metal layer, in which the second metal layer includes a first portion and a second portion, and the first portion and the second portion are separated by a distance in a second direction perpendicular to the first direction.
1 . A semiconductor wafer, comprising:
a scribe line extending along a first direction; and
a probe pad disposed on the scribe line and configured to contact a probe needle, wherein the probe pad comprises:
a first metal layer;
a dielectric layer disposed on the first metal layer, wherein the dielectric layer comprises a first recess and a second recess; and
a second metal layer configured to connect to the first metal layer, wherein the dielectric layer is located between the second metal layer and the first metal layer, wherein the second metal layer comprises a first portion and a second portion, and the first portion and the second portion are separated by a trench, wherein a top surface of the dielectric layer is exposed in the trench, the trench has a distance in a second direction perpendicular to the first direction,
wherein the first portion is disposed on the first recess and the top surface of the dielectric layer to form a first via, and the second portion is disposed on the second recess and the top surface of the dielectric layer to form a second via.
2 . The semiconductor wafer of claim 1 , wherein a diameter of the probe needle is greater than the distance between the first portion and the second portion of the second metal layer.
3 . The semiconductor wafer of claim 2 , wherein the diameter of the probe needle is in a range from 15 μm to 30 μm.
4 . The semiconductor wafer of claim 1 , wherein the distance between the first portion and the second portion is less than 15 μm.
5 . The semiconductor wafer of claim 1 , wherein a width in the second direction of the probe pad is in a range from 50 μm to 68 μm.
6 . The semiconductor wafer of claim 1 , wherein a height of the second metal layer from the top surface of the dielectric layer to a top surface of the second metal layer is in a range from 3 μm to 6 μm.
7 . The semiconductor wafer of claim 1 , wherein each of the first portion and the second portion of the second metal layer has a rectangular shape.
8 . The semiconductor wafer of claim 1 , wherein the first metal layer comprises a component prepared to be tested.
9 . The semiconductor wafer of claim 1 , wherein the first portion comprises a lower part, wherein the lower part is disposed on the top surface of the first metal layer and an inner sidewall of the first recess.
10 . The semiconductor wafer of claim 1 , wherein the second portion comprises a lower part, wherein the lower part is disposed on the top surface of the first metal layer and an inner sidewall of the second recess.