IP Library Granted Patent US 12,681,234
Granted Patent B2
US 12,681,234 · App. 18/105,704 · Granted Jul 14, 2026

Optoelectronic package

Inventors: Jr-Wei Lin (Kaohsiung, TW); Mei-Ju Lu (Kaohsiung, TW); Wen Chieh Yang (Kaohsiung, TW)
Assignee: Advanced Semiconductor Engineering, Inc.
G02B6/12004G02B6/424G02B6/4245G02B6/43H10W90/00H10W90/722
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Quick Facts
Patent No.
US 12,681,234
App. No.
18/105,704
Granted
Jul 14, 2026
Kind
B2
Abstract

An optoelectronic package includes a first photonic component, an optical connection element and an optical component. The optical connection element is disposed at least partially over the first photonic component. The optical component is disposed at least partially over the first photonic component. The optical connection element and the optical component are spaced apart from each other.

Claims (33)

1 . An optoelectronic package, comprising:

a first photonic IC;

a second photonic IC spaced apart from the first photonic IC;

an optical connection element disposed at least partially over the first photonic IC and at least partially over the second photonic IC, wherein the optical connection element is configured to provide optical signal transmission between the first photonic IC and the second photonic IC;

a first optical component disposed at least partially over the first photonic IC and spaced apart from the optical connection element, wherein the optical component is configured to provide external optical signal communication for the first photonic IC; and

a first electronic component disposed over the first photonic IC and between the optical connection element and the first optical component;

wherein the first electronic component comprises an integrated digital signal processor (DSP), a transimpedance amplifier (TIA), a driver (DRV), or a combination thereof.

2 . The optoelectronic package of claim 1 , further comprising:

a first processing unit comprising a process die;

wherein the first electronic component is electrically connected to the first processing unit and a projection of the first processing unit in a vertical direction overlaps the first photonic IC and the first electronic component.

3 . The optoelectronic package of claim 2 , wherein the first photonic IC comprises a conductive via penetrating through the first photonic IC, and wherein the first electronic component is electrically connected to the processing unit through the conductive via of the first photonic IC.

4 . The optoelectronic package of claim 2 , wherein the first electronic component is disposed more adjacent to the first processing unit than the first photonic IC is, the first electronic component comprises a conductive via penetrating through the first electronic component, and wherein the first photonic IC is electrically connected to the first processing unit through the conductive via of the first electronic component.

5 . The optoelectronic package of claim 2 , wherein the process die is surrounded by a dielectric structure, and a conductive via penetrates through the dielectric structure.

6 . The optoelectronic package of claim 2 , further comprising a carrier supporting the first photonic IC, the first processing unit and the first electronic component, wherein the first electronic component is electrically connected to the carrier through a conductive via of the first processing unit.

7 . The optoelectronic package of claim 1 , wherein the first photonic IC is configured to convert optical signals received from the optical connection element to electric signals for transmission to the first electronic component, or convert electric signals received from the first electronic component to optical signals for transmission to the optical connection element.

8 . The optoelectronic package of claim 1 , wherein the optical connection element is or include a compact integrated waveguide ensemble (CIWE).

9 . The optoelectronic package of claim 1 , further comprising:

a second electronic component disposed over the second photonic IC wherein the second electronic component comprises an integrated digital signal processor (DSP), a transimpedance amplifier (TIA), a driver (DRV), or a combination thereof,

wherein the optical connection element comprises a circuit structure, and the first electronic component and the second electronic component are electrically communicated with each other through the first photonic IC, the optical connection element and the second photonic IC.

10 . The optoelectronic package of claim 9 , further comprising:

a first processing unit disposed under the first photonic IC and comprising a first die;

a second processing unit disposed under the second photonic IC and comprising a second die; and

a bridging component disposed over the first processing unit and the second processing unit, wherein the bridging component is configured to electrically connect the first processing unit and the second processing unit.

11 . The optoelectronic package of claim 10 , wherein the first electronic component is spaced apart from the first processing unit by the bridging component, the second electronic component is spaced apart from the second processing unit by the bridging component, and the bridging component is further configured to electrically connect the first processing unit and the first electronic component, or electrically connect the second processing unit and the second electronic component, or both.

12 . The optoelectronic package of claim 9 , wherein the first photonic IC receives electric signals from the first electronic component, converts the electric signals to optical signals, and transmits the optical signals to the second photonic IC through the optical connection element.

13 . The optoelectronic package of claim 12 , wherein the first photonic IC receives the electric signals from the first electronic component, converts the electric signals to the optical signals, and transmits the optical signals through the first optical component to a device outside of the optoelectronic package.

14 . The optoelectronic package of claim 9 , further comprising a first processing unit comprising a first die and a second die, wherein the first die is disposed at least partially under the first photonic IC; and the second die is disposed at least partially under the second photonic IC, and wherein the first processing unit further comprises a dielectric structure surrounding both the first die and the second die, and at least one circuit structure electrically connecting the first die and the second die.

15 . The optoelectronic package of claim 1 , wherein the optical connection element is configured as an optical bridge element to transmit optical signals and as an electrical bridge element to transmit electric signals.

16 . The optoelectronic package of claim 1 , wherein the first photonic IC comprises a region R 1 and a region R 2 , the region R 1 is optically coupled with the optical connection element, the region R 2 is optically coupled with the first optical component, and the region R 1 is configured to provide an optical coupling type different from that of the region R 2 .

17 . The optoelectronic package of claim 1 , wherein the first photonic IC is optically communicated with the second photonic IC in a horizontal direction and electrically communicated with the first electronic component in a vertical direction.

18 . The optoelectronic package of claim 1 , further comprising a third photonic IC spaced apart from the first photonic IC and the second photonic IC, wherein the optical connection element optically connects the first photonic IC, the second photonic IC and the third photonic IC.

19 . The optoelectronic package of claim 18 , wherein the optical connection element is disposed at least partially over the second photonic IC and at least partially over the third photonic IC.

20 . The optoelectronic package of claim 1 , the optical connection element covers a corner of the first photonic IC and a corner of the second photonic IC.