IP Library Granted Patent US 12681236
Granted Patent B2
US 12681236 · App. 17/911,111 · Granted Jul 14, 2026

Coupon wafer and method of preparation thereof

Inventors: Mohamad Dernaika (Cork, IE); Frank Peters (Cork, IE); Guomin Yu (Glendora, CA)
Assignee: Rockley Photonics Limited
G02B6/136B41F16/0046G02B6/12G02B6/122G02B6/132G02B6/4207G02B6/43H10D84/05H10P72/74H10P95/112H10W72/0198H10W74/014H10P72/7428
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Quick Facts
Patent No.
US 12681236
App. No.
17/911,111
Granted
Jul 14, 2026
Kind
B2
Abstract

A coupon wafer comprising a device coupon ( 110 ) for use in a micro-transfer printing process used to fabricate an optoelectronic device. The coupon wafer includes a wafer substrate ( 124 ), and the device coupon ( 110 ) is attached to the wafer substrate via a tether ( 122 ) and the tether ( 122 ) is formed from a dielectric material.

Claims (21)

1 . A coupon wafer comprising a device coupon for use in a micro-transfer printing process used to fabricate an optoelectronic device,

wherein the coupon wafer includes a wafer substrate, and the device coupon is attached to the wafer substrate via a tether; and

wherein the tether comprises a dielectric material,

wherein the wafer substrate defines a raised platform, below the device coupon, and has a channel adjacent to the raised platform,

wherein the tether comprises:

a first portion extending laterally along a top surface of the device coupon;

a second portion extending from the first portion and vertically along a side surface of the device coupon;

a third portion extending from the second portion and laterally away from a bottom of the device coupon;

a fourth portion extending from the third portion and vertically along a side surface of the raised platform; and

a fifth portion extending from the fourth portion and laterally along a floor of the channel,

wherein the tether is a multi-layered tether comprising at least one of a layer of silicon nitride or a layer of silicon oxide,

wherein the tether has a thickness of at least 20 nm and no more than 500 nm,

wherein the tether includes a plurality of apertures therethrough, and

wherein a gap is defined directly between a top surface of the raised platform and the device coupon, and directly between the top surface of the raised platform and the third portion of the tether.

2 . The coupon wafer of claim 1 , wherein the tether includes: the layer of silicon nitride and a layer of photoresist; the layer of silicon oxide and a layer of photoresist; or the layer of silicon nitride, the layer of silicon oxide, and a layer of photoresist.

3 . The coupon wafer of claim 1 , wherein the device coupon includes an anti-reflective coating, and the tether is at least partially provided by the anti-reflective coating.

4 . A method of preparing the coupon wafer of claim 1 , wherein the method comprises:

depositing the tether across a surface of the device coupon to attach the device coupon to the wafer substrate.

5 . A method of micro-transfer printing, using the coupon wafer of claim 1 , comprising steps of:

adhering the device coupon to a stamp, and lifting it away from the coupon wafer; and

depositing the device coupon on a platform wafer, thereby forming an optoelectronic device.