IP Library Granted Patent US 12681249
Granted Patent B2
US 12681249 · App. 18/458,892 · Granted Jul 14, 2026

3D system and wafer reconstitution with mid-layer interposer

Inventors: Sanjay Dabral (Cupertino, CA); SivaChandra Jangam (Milpitas, CA)
Assignee: Apple Inc.
G02B6/428G02B6/4279G02B6/4283G02B6/4293
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Quick Facts
Patent No.
US 12681249
App. No.
18/458,892
Granted
Jul 14, 2026
Kind
B2
Abstract

A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. Second package level components can be bonded to the mid-layer interposer with metal-metal bonds and optionally dielectric-dielectric bonds, while the first package level components can be bonded to the mid-layer interposer with dielectric-dielectric and optionally metal-metal bonds. Dies within the first and/or second package levels may optionally be connected with one or more optical interconnect paths.

Claims (33)

1 . A three dimensional (3D) system comprising:

a mid-layer interposer;

a first package level underneath the mid-layer interposer, the first package level including a first first-level die directed bonded with the mid-layer interposer; and

a second package level over the mid-layer interposer, the second package level including a first second-level die direct bonded with the mid-layer interposer and a second second-level die direct bonded with the mid-layer interposer;

wherein the mid-layer interposer includes an electrical-to-optical (EO) converter electrically connected with the first second-level die, an optical-to-electrical (OE) converter electrically connected with the second second-level die, and an optical interconnect that connects the EO converter and the OE converter.

2 . The 3D system of claim 1 , wherein the first second-level die and the second second-level die are both hybrid bonded with the mid-layer interposer.

3 . The 3D system of claim 1 , wherein the optical interconnect comprises a waveguide or photonic wire.

4 . The 3D system of claim 1 , wherein the EO converter is connected to a first electromagnetic field communication structure, and the first second-level die includes a second electromagnetic field communication structure.

5 . The 3D system of claim 4 , wherein the first electromagnetic field communication structure and the second electromagnetic field communication structure are vertically aligned.

6 . The 3D system of claim 5 , wherein the first electromagnetic field communication structure and the second electromagnetic field communication structure are coils or capacitors.

7 . The 3D system of claim 1 , wherein the mid-layer interposer includes a plurality of devices selected from the group consisting of capacitors, magnetic elements and active devices.

8 . A three dimensional (3D) system comprising:

a mid-layer interposer;

a first package level underneath the mid-layer interposer, the first package level including a first first-level die directed bonded with the mid-layer interposer; and

a second package level over the mid-layer interposer, the second package level including a first second-level die direct bonded with the mid-layer interposer and a second second-level die direct bonded with the mid-layer interposer;

wherein the first second-level die includes an electrical-to-optical (EO) converter, and the second second-level die includes an optical-to-electrical (OE) converter; and

wherein the mid-layer interposer includes an optical interconnect that is optically connected with the EO converter and the OE converter.

9 . The 3D system of claim 8 , wherein the optical interconnect is selected from the group consisting of a waveguide and a photonic wire.

10 . The 3D system of claim 9 , further comprising a first optical via that optically connects the EO converter to the optical interconnect, and a second optical via that optically connects the optical interconnect to the OE converter.

11 . The 3D system of claim 10 , wherein the first second-level die includes a plurality of sub-chiplets, and the first optical via extends through one or more of the plurality of sub-chiplets.

12 . The 3D system of claim 8 , wherein the mid-layer interposer includes a plurality of devices selected from the group consisting of capacitors, magnetic elements and active devices.

13 . A 3D system comprising:

a mid-layer interposer;

a first package level including a first-level die directed bonded with the mid-layer interposer;

a second package level including a second-level die directed bonded with the mid-layer interposer;

wherein the first-level die or intermediate interposer includes an optical-to-electrical (OE) converter, and the second-level die includes an electrical-to-optical (EO) converters; and

an optical via that optically connects the EO converter with the OE converter.

14 . The 3D system of claim 13 , wherein:

the first-level die includes the OE converter; and

the optical via extends through the mid-layer interposer vertically between the first-level die and the second-level die.

15 . The 3D system of claim 13 , wherein the second-level die includes a plurality of sub-chiplets, and the optical via extends through one or more of the plurality of sub-chiplets.

16 . The 3D system of claim 15 , wherein the mid-layer interposer includes the OE converter.

17 . The 3D system of claim 13 , wherein the mid-layer interposer includes a plurality of devices selected from the group consisting of capacitors, magnetic elements and active devices.