Photodetectors integrated into thin-film transistor backplanes
An electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate and including a set of TFTs. The electronic device further includes a photodetector attached to the multi-layer structure and including an organic photosensitive material. The organic photosensitive material is electrically connected to a TFT in the set of TFTs. Another electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate. The multi-layer structure includes a first set of layers including a set of TFTs, and a second set of layers including a PIN diode. The PIN diode is configured to operate as a photodetector and receive at least one wavelength of electromagnetic radiation, and is electrically connected to a TFT in the set of TFTs.
1 . An electronic device, comprising:
a stack, including,
a substrate; and
a multi-layer structure deposited on the substrate and including a set of thin-film transistors (TFTs); and
a photodetector attached to the multi-layer structure and defined by an organic photosensitive material that is electrically connected to a transistor in the set of TFTs, wherein the multi-layer structure comprises a Low-Temperature Polycrystalline Oxide (LTPO) organic light-emitting diode (OLED) display backplane.
2 . The electronic device of claim 1 , further comprising:
a housing defining at least part of an interior volume and an opening into the interior volume;
a cover mounted to the housing to cover the opening and further define the interior volume; and
a display mounted within the interior volume and viewable through the cover;
wherein:
the stack is attached to a side of the display opposite the cover; and
the photodetector is positioned to receive light through the display.
3 . The electronic device of claim 2 , further comprising at least one of a lens, an optical waveguide, an optical polarizer, or an optical film, positioned between the display and the stack.
4 . The electronic device of claim 2 , wherein:
the multi-layer structure including the set of TFTs is a first multi-layer structure including a first set of TFTs; and
the display includes:
a second substrate;
a second multi-layer structure deposited on the second substrate and including a second set of TFTs; and
an organic light-emitting material deposited on the second multi-layer structure and electrically connected to a set of drive transistors in the second set of TFTs.
5 . The electronic device of claim 2 , wherein the display comprises a bottom-emission liquid crystal display (LCD).
6 . The electronic device of claim 1 , wherein the organic photosensitive material forms a planarization layer of the multi-layer structure.
7 . The electronic device of claim 6 , wherein the planarization layer is a first planarization layer, the electronic device further comprising:
a second planarization layer between the first planarization layer and the set of TFTs.
8 . The electronic device of claim 6 , wherein:
the organic photosensitive material forms at least a first planarization layer and a second planarization layer of the multi-layer structure; and
the electronic device further comprises an electrode positioned between the first planarization layer and the second planarization layer and electrically connected to the transistor.
9 . The electronic device of claim 1 , wherein the photodetector comprises an organic avalanche photodiode (O-APD).
10 . An electronic device, comprising:
a stack, including,
a substrate; and
a multi-layer structure deposited on the substrate and including:
a first set of layers including a set of thin-film transistors (TFTs) and a TFT oxide layer; and
a second set of layers including a PIN diode, the second set of layers distinct from the first set of layers; wherein:
the PIN diode is configured to operate as a photodetector and receive at least one wavelength of electromagnetic radiation;
the PIN diode is electrically connected to at least one TFT in the set of TFTs,
the at least one TFT has a gate formed in the TFT oxide layer;
the PIN diode is electrically connected to an electrode comprising titanium; and
the titanium operates as a hydrogen getter.
11 . The electronic device of claim 10 , wherein:
the first set of layers and the second set of layers share an electrical contact layer; and
each of the PIN diode and the at least one TFT is connected to a respective electrical contact in the electrical contact layer.
12 . The electronic device of claim 10 , wherein the first set of layers further includes a silicon-based TFT.
13 . The electronic device of claim 10 , wherein the PIN diode is silicon-based.
14 . The electronic device of claim 10 , wherein the PIN diode is electrically connected to an electrode that extends over the at least one TFT.