Display device and semiconductor device
According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.
1 . A display device comprising:
a first gate line extending in a first direction;
a second gate line adjacent to the first gate line with an opening area in a second direction;
a first source line extending in the second direction;
a second source line adjacent to the first source line with the opening area in the first direction; and
a contact electrode located in the opening area,
wherein
a width of the opening area between the first gate line and the second gate line in the second direction is less than a width of the first gate line in the second direction, and
a width of the opening area between the first source line and the second source line is same as or smaller than a width of the contact electrode in the first direction.
2 . The display device of claim 1 ,
wherein
the opening area is surrounded by the first gate line, the second gate line, the first source line and the second source line.
3 . The display device of claim 2 , wherein
the first gate line has a first side edge facing the second gate line, and a second side edge opposed to the first side edge,
an area of the first gate line is surrounded by the first side edge, the second side edge, the first source line and the second source line, and
the open area is less than the area of the first gate line.
4 . The display device of claim 3 , further comprising:
an oxide semiconductor;
a first insulating layer covering the oxide semiconductor; and
a transparent conductive layer on the first insulating layer,
wherein
the first insulating layer has a first contact hole and a second contact hole,
the first source line is connected to a first region of the oxide semiconductor via the first contact hole, and
the transparent conductive layer is connected to a second region of the oxide semiconductor via the second contact hole.
5 . The display device of claim 4 , wherein
a first part of the first contact hole overlaps the second side edge of the first gate line,
a second part of the first contact hole is located outside of the first gate line,
a first part of the second contact hole overlaps the first side edge of the first gate line,
a second part of the second contact hole is located outside of the first gate line, and
the second part of the second contact hole is located inside of the open area.
6 . The display device of claim 4 , wherein
the oxide semiconductor has a channel region between the first region and the second region, and
the channel region is bent in a region overlapping the first gate line.
7 . The display device of claim 6 , wherein
the channel region is bent in a region overlapping the first source line.
8 . The display device of claim 1 , wherein
the width of the opening area between the first gate line and the second gate line in the second direction is 3 nm, and
the width of the first gate line in the second direction is 5 nm.