IP Library Granted Patent US 12681357
Granted Patent B2
US 12681357 · App. 18/398,008 · Granted Jul 14, 2026

Active device substrate

Inventors: Chi-Sheng Liao (Hsinchu, TW); Ken Wei Chang (Hsinchu, TW); Bo-Ru Jian (Hsinchu, TW); Bin Cheng Lin (Hsinchu, TW); Ta-Wen Liao (Hsinchu, TW)
Assignee: AUO Corporation
G02F1/16766G02F1/167
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Quick Facts
Patent No.
US 12681357
App. No.
18/398,008
Granted
Jul 14, 2026
Kind
B2
Abstract

An active device substrate includes an active device and an electrode. The electrode includes a first light shielding conductive pattern, a second light shielding conductive pattern, a third light shielding conductive pattern, and a first metal oxide protection pattern. The first light shielding conductive pattern, the second light shielding conductive pattern, and the third light shielding conductive pattern are sequentially stacked to form a conductive stack. The conductive stack is disposed in an opening of the first metal oxide protection pattern. A first portion, a second portion, and a third portion of the first metal oxide protection pattern respectively contact a sidewall of the first light shielding conductive pattern, a sidewall of the second light shielding conductive pattern, and a sidewall of the third light shielding conductive pattern. Materials of the first portion, the second portion, and the third portion of the first metal oxide protection pattern are the same.

Claims (29)

1 . An active device substrate, comprising:

a substrate;

an active device, disposed on the substrate; and

an electrode, electrically connected to the active device and comprising:

a first light shielding conductive pattern;

a second light shielding conductive pattern;

a third light shielding conductive pattern, wherein the first light shielding conductive pattern, the second light shielding conductive pattern, and the third light shielding conductive pattern are sequentially stacked to form a conductive stack; and

a first metal oxide protection pattern, having an opening, wherein the conductive stack is disposed in the opening, the first metal oxide protection pattern comprises a first portion, a second portion, and a third portion, the first portion, the second portion, and the third portion of the first metal oxide protection pattern respectively contact a sidewall of the first light shielding conductive pattern, a sidewall of the second light shielding conductive pattern, and a sidewall of the third light shielding conductive pattern, and a material of the first portion, a material of the second portion, and a material of the third portion of the first metal oxide protection pattern are identical;

wherein the first metal oxide protection pattern has a width in a direction substantially parallel to the substrate, and the width gradually decreases as the first metal oxide protection pattern moves away from the substrate.

2 . The active device substrate according to claim 1 , wherein at least one of the first light shielding conductive pattern and the third light shielding conductive pattern comprises a first metal, the second light shielding conductive pattern comprises a second metal different from the first metal, and the material of the first portion, the material of the second portion, and the material of the third portion of the first metal oxide protection pattern are an oxide of the second metal.

3 . An active device substrate, comprising:

a substrate;

an active device, disposed on the substrate; and

an electrode, electrically connected to the active device and comprising:

a first light shielding conductive pattern;

a second light shielding conductive pattern;

a third light shielding conductive pattern, wherein the first light shielding conductive pattern, the second light shielding conductive pattern, and the third light shielding conductive pattern are sequentially stacked to form a conductive stack; and

a first metal oxide protection pattern, having an opening, wherein the conductive stack is disposed in the opening, the first metal oxide protection pattern comprises a first portion, a second portion, and a third portion, the first portion, the second portion, and the third portion of the first metal oxide protection pattern respectively contact a sidewall of the first light shielding conductive pattern, a sidewall of the second light shielding conductive pattern, and a sidewall of the third light shielding conductive pattern, and a material of the first portion, a material of the second portion, and a material of the third portion of the first metal oxide protection pattern are identical; and

an insulation layer, disposed between the electrode and the active device and having a contact window, wherein the electrode is disposed on the insulation layer, and one portion of the electrode fills the contact window of the insulation layer, so as to be electrically connected to the active device, the insulation layer comprising:

a thick portion, overlapped with the conductive stack and the first metal oxide protection pattern; and

a thin portion, located outside an area occupied by the conductive stack and the first metal oxide protection pattern.

4 . The active device substrate according to claim 3 , wherein the insulation layer further comprises:

a connection portion, connecting the thick portion and the thin portion and located outside the area occupied by the conductive stack and the first metal oxide protection pattern,

wherein the connection portion has a thickness in a direction substantially perpendicular to the substrate, and the thickness of the connection portion gradually decreases from the thick portion to the thin portion.

5 . The active device substrate according to claim 4 , wherein the electrode further comprises:

a second metal oxide protection pattern, covering the third light shielding conductive pattern of the conductive stack, the first metal oxide protection pattern, the connection portion of the insulation layer, and the thin portion of the insulation layer.

6 . The active device substrate according to claim 3 , wherein the thick portion of the insulation layer comprises:

a first sub-portion, overlapped with the conductive stack; and

a second sub-portion, overlapped with the first metal oxide protection pattern.