EUV resist underlayer film-forming composition
A composition for forming a resist underlayer film that enables formation of an intended resist pattern, and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film includes: a compound represented by formula (1); a polymer; and an organic solvent. (In formula (1), Y1 represents a single bond, an oxygen atom, a sulfur atom, a halogen atom, or a C1-10 alkylene group which may be substituted with a C6-40 aryl group, or a sulfonyl group, T1 and T2 each represent a C1-10 alkyl group, R1 and R2 each independently represent a C1-10 alkyl group which is substituted with at least one hydroxy group, and n1 and n2 each independently represent an integer of 0-4).
1 . An EUV resist underlayer film-forming composition comprising:
a compound represented by the following formula (1):
wherein:
Y 1 represents a single bond, an oxygen atom, a sulfur atom, an alkylene group having 1 to 10 carbon atoms and optionally being substituted with a halogen atom or an aryl group having 6 to 40 carbon atoms, or a sulfonyl group,
T 1 and T 2 represent an alkyl group having 1 to 10 carbon atoms,
R 1 and R 2 independently represent an alkyl group having 1 to 10 carbon atoms and being substituted with at least one hydroxy group, and
n1 and n2 independently represent an integer of 0 to 4,
a polymer, wherein the polymer has an end blocked by a compound containing an aliphatic ring that optionally bas a carbon-carbon bond interrupted by a heteroatom and is optionally substituted with a substituent, and
an organic solvent.
2 . The EUV resist underlayer film-forming composition according to claim 1 , wherein Y 1 is a sulfonyl group.
3 . The EUV resist underlayer film-forming composition according to claim 1 , wherein the polymer comprises a heterocyclic structure.
4 . The EUV resist underlayer film-forming composition according to claim 1 , further comprising a crosslinking agent.
5 . The EUV resist underlayer film-forming composition according to claim 1 , further comprising a crosslinking catalyst.
6 . An EUV resist underlayer film which is a baked product of an applied film comprising the EUV resist underlayer film-forming composition according to claim 1 .
7 . A method for producing a patterned substrate, comprising the steps of:
applying the EUV resist underlayer film-forming composition according to claim 1 onto a semiconductor substrate and baking the applied composition to form an EUV resist underlayer film;
applying an EUV resist onto the EUV resist underlayer film and baking the applied resist to form an EUV resist film;
irradiating the semiconductor substrate covered with the EUV resist underlayer film and the EUV resist with a light or an electron beam; and
subjecting the exposed EUV resist film to development and patterning.
8 . A method for producing a semiconductor device, comprising the steps of:
forming an EUV resist underlayer film comprising the EUV resist underlayer film-forming composition according to claim 1 on a semiconductor substrate;
forming an EUV resist film on the EUV resist underlayer film;
irradiating the EUV resist film with a light or an electron beam followed by development to form an EUV resist pattern;
subjecting the EUV resist underlayer film to etching through the formed EUV resist pattern to form a patterned EUV resist underlayer film; and
processing the semiconductor substrate using the patterned EUV resist underlayer film.