IP Library Granted Patent US 12681521
Granted Patent B2
US 12681521 · App. 18/633,165 · Granted Jul 14, 2026

Techniques for voltage reference circuits with adaptive power cycling

Inventors: Adrian Lin (Austin, TX); David Lovelace (Lakeway, TX)
Assignee: Infineon Technologies Americas Corp.
G05F3/24G06F1/26
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Quick Facts
Patent No.
US 12681521
App. No.
18/633,165
Granted
Jul 14, 2026
Kind
B2
Abstract

A voltage across a first capacitor and a voltage across a second capacitor are set to a reference voltage via a reference voltage source. The first and second capacitors are disconnected from the reference voltage source and the reference voltage is turned-off. A processing device turns-on the reference voltage in response to determining a voltage difference between the first and second capacitors due to leakage current is at or above a threshold level. The first and second capacitors are connected to the reference voltage source to return the voltage across the first capacitor and the voltage across the second capacitor to the reference voltage.

Claims (46)

1 . A method, comprising:

setting a voltage across a first capacitor and a voltage across a second capacitor to a reference voltage via a reference voltage source;

disconnecting the first and second capacitors from the reference voltage source;

turning-off the reference voltage source;

turning-on the reference voltage source in response to determining a voltage difference between the first and second capacitors due to leakage current is at or above a threshold level corresponding to a maximum change in the voltage across the second capacitor; and

connecting the first and second capacitors to the reference voltage source to return the voltage across the first capacitor and the voltage across the second capacitor to the reference voltage.

2 . The method of claim 1 , wherein the voltage difference between the first and second capacitors comprises a change in the voltage across the first capacitor minus a change in the voltage across the second capacitor.

3 . The method of claim 1 , wherein the threshold level corresponds to a maximum acceptable ripple voltage.

4 . The method of claim 3 , wherein the threshold level comprises the maximum acceptable ripple voltage divided by a ratio of a capacitance of the first capacitor to a capacitance of the second capacitor.

5 . The method of claim 4 , wherein the capacitance of the second capacitor is a value greater than the capacitance of the first capacitor.

6 . The method of claim 1 , further comprising monitoring an output of a hysteresis comparator to determine the voltage difference between the first and second capacitors is at or above the threshold level, wherein a first input of the hysteresis comparator is coupled to the first capacitor and a second input of the hysteresis comparator is coupled to the second capacitor, the maximum change in the voltage across the second capacitor corresponds to a maximum acceptable ripple voltage experienced by a computing device component coupled to the second capacitor in parallel with the second input of the hysteresis comparator.

7 . The method of claim 1 , further comprising at least one of waiting a threshold amount of time between turning-on the reference voltage source and connecting the first and second capacitors to the reference voltage source or waiting a threshold amount of time between disconnecting the first and second capacitors from the reference voltage source and turning-off the reference voltage source.

8 . The method of claim 1 , further comprising:

opening a first switch to disconnect the first capacitor from the reference voltage source;

opening a second switch to disconnect the second capacitor from the reference voltage source;

closing the first switch to connect the first capacitor to the reference voltage source; and

closing the second switch to connect the second capacitor to the reference voltage source.

9 . The method of claim 8 , wherein the first switch comprises a first p-channel metal-oxide semiconductor (pMOS) transistor and the second switch comprises a second pMOS transistor.

10 . The method of claim 1 , further comprising:

determining activation of a low power mode; and

disconnecting the first and second capacitors from the reference voltage source in response to activation of the low power mode.

11 . The method of claim 1 , wherein the reference voltage source comprises a voltage reference and the reference voltage comprises a bandgap voltage between 1 and 2 volts.

12 . A voltage reference circuit, comprising:

a first capacitor having a first capacitance;

a second capacitor having a second capacitance;

a reference voltage source couplable to the first capacitor via a first switch and the second capacitor via a second switch;

a hysteresis comparator having a first input coupled to the first capacitor, a second input coupled to the second capacitor, and an output, wherein the hysteresis comparator is configured to generate output signals based on voltage difference between the first and second capacitors, wherein a first output signal of the output signals is generated when the voltage difference between the first and second capacitors is at or above a threshold level corresponding to a maximum change in voltage across the second capacitor; and

control logic coupled to the reference voltage source, the first switch, the second switch, and the output of the hysteresis comparator, wherein the control logic is configured to power cycle the reference voltage source based on the output signals of the hysteresis comparator and the first output signal is configured to cause the control logic to turn on the reference voltage source.

13 . The voltage reference circuit of claim 12 , wherein a maximum ripple voltage when power cycling the reference voltage source is determined based on the ratio of second capacitance to the first capacitance and the voltage difference between the first and second capacitors.

14 . The voltage reference circuit of claim 13 , wherein the second capacitance is at least five times larger than the first capacitance.

15 . The voltage reference circuit of claim 12 , wherein the first switch comprises a first p-channel metal-oxide semiconductor (pMOS) transistor and the second switch comprises a second pMOS transistor.

16 . The voltage reference circuit of claim 12 , wherein the voltage difference between the first and second capacitors comprises a change in the voltage across the first capacitor minus a change in the voltage across the second capacitor.

17 . A system resource subsystem (SRSS), comprising:

a first capacitor;

a second capacitor;

a reference voltage source couplable to the first capacitor via a first switch and the second capacitor via a second switch;

a hysteresis comparator having a first input coupled to the first capacitor, a second input coupled to the second capacitor, and an output;

control logic coupled to the reference voltage source, the first switch, the second switch, and the output of the hysteresis comparator, and the control logic configured to:

set a voltage across the first capacitor and voltage across the second capacitor to a reference voltage via the reference voltage source;

open the first and second switches to disconnect the first and second capacitors from the reference voltage source;

turn-off the reference voltage source;

turn-on the reference voltage source in response to a determination a voltage difference between the first and second capacitors due to leakage current is at or above a threshold level corresponding to a maximum change in the voltage across the second capacitor; and

close the first and second switches to connect the first and second capacitors to the reference voltage source to return the voltage across the first capacitor and the voltage across the second capacitor to the reference voltage.

18 . The SRSS of claim 17 , wherein the first switch comprises a first p-channel metal-oxide semiconductor (pMOS) transistor and the second switch comprises a second pMOS transistor.

19 . The SRSS of claim 17 , wherein the voltage difference between the first and second capacitors comprises a change in the voltage across the first capacitor minus a change in the voltage across the second capacitor.

20 . The SRSS of claim 17 , wherein the threshold level corresponds to a maximum ripple voltage below 0.5 millivolts.