IP Library Granted Patent US 12681846
Granted Patent B2
US 12681846 · App. 18/829,789 · Granted Jul 14, 2026

Memory and operating method thereof

Inventors: Sibo Ma (Beijing, CN); Hong Hu (Beijing, CN); Yang Li (Beijing, CN); Jianzhong Zhao (Beijing, CN)
Assignee: GIGADEVICE SEMICONDUCTOR INC.
G06F12/0223G11C7/1069G11C7/222G11C8/06G11C8/08
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12681846
App. No.
18/829,789
Granted
Jul 14, 2026
Kind
B2
Abstract

Disclosed are a memory and operation method thereof. The memory comprises a memory array and an access interface for external access to the memory array, the access interface comprising at least one data/address multiplexing line. The method comprises: starting a specified fixed-number-random-access mode, in which the memory array can be continuously read or written in response to receiving a fixed number of random access addresses; sequentially receiving the preset fixed number of access addresses via the data/address multiplexing line in succession; sequentially outputting data read in response to the received access addresses in succession via the data/address multiplexing line in the case where the mode indicates read operations, or sequentially receiving data to be written in response to the received access addresses in succession via the data/address multiplexing line in the case where the mode indicates write operations; and ending the mode by receiving an invalid chip enable signal.

Claims (49)

1 . A method for operating a memory, the memory comprising a memory array and an access interface for external access to the memory array, the access interface comprising at least one data/address multiplexing line for transmitting data and address,

the method comprising:

starting a specified fixed-number random access mode, in which the memory array can be continuously read or written in response to receiving a fixed number of random access addresses;

sequentially receiving the fixed number of access addresses via the data/address multiplexing line in succession;

sequentially outputting data read in response to the received access addresses in succession via the data/address multiplexing line in the case where the specified fixed-number random access mode indicates read operations, or sequentially receiving data to be written in response to the received access addresses in succession via the data/address multiplexing line in the case where the specified fixed-number random access mode indicates write operations; and

ending the fixed-number random access mode by receiving an invalid chip enable signal.

2 . The method according to claim 1 , wherein,

the fixed number of access addresses have the same row address but random column addresses; and

the step of sequentially receiving the fixed number of access addresses via the data/address multiplexing line in succession comprises:

sequentially receiving a common row address and the fixed number of column addresses via the data/address multiplexing line in succession.

3 . The method according to claim 2 , wherein,

during a period from the beginning of a first read/write operation to the end of a last read/write operation, a word line of the memory array corresponding to the received common row address remains activated.

4 . The method according to claim 1 , wherein,

the access addresses sequentially received in succession have random row addresses and random column addresses.

5 . The method according to claim 4 , wherein,

a process of outputting data via the data/address multiplexing line for a preceding read operation is performed at least partially in parallel with a word line switching process required for a subsequent read operation; or

a word line switching process required for a subsequent write operation is initiated, before a process of receiving data in response to a subsequent write operation via the data/address multiplexing line is completed.

6 . The method according to claim 5 , wherein,

the word line switching process includes: deactivating a word line corresponding to a row address of the preceding read/write operation and activating a word line corresponding to a row address of the subsequent read/write operation.

7 . The method according to claim 4 , wherein,

the method further comprises waiting for a further preset number of clock cycles preset according to a frequency of the clock cycles between outputting/receiving two pieces of data read or to be written in response to two of the access addresses.

8 . The method according to claim 1 , wherein,

the method further comprises waiting for a second preset number of clock cycles preset according to a frequency of the clock cycles, after finishing receiving the access addresses and before outputting or receiving the data read or to be written.

9 . The method according to claim 8 , wherein,

the second preset number is determined by receiving a predetermined command or by a preset mode register, and

in the case where the specified fixed-number random access mode indicates the read operations, during the second preset number of clock cycles, the data/address multiplexing line is released to a high-impedance state.

10 . The method according to claim 1 , wherein,

in the case of receiving the invalid chip enable signal when the read operations or the write operations performed in response to the received access addresses are not completed, an access address whose corresponding read operation has not yet been started, or an access address whose corresponding written data has not yet been received any is discarded, and in the case that one of the write operations is in progress or written data corresponding to the one write operation is being received part of the written data is discarded.

11 . The method according to claim 1 , wherein,

the access interface further includes a chip enable line, and the chip enable signal is received from a host via the chip enable line.

12 . The method according to claim 1 , wherein,

the access interface further includes a transmission line, for outputting a signal for synchronizing sampling of the data output on the data/address multiplexing line in the case of the read operations, and for receiving a signal for masking the data received on the data/address multiplexing line in the case of the write operations.

13 . The method according to claim 1 , wherein,

the memory is a PSRAM or a Flash.

14 . The method according to claim 1 , wherein,

the number of the data/address multiplexing line is 2 N , and 2 N or 2 N+1 bits of data or address are output or received per clock cycle via the data/address multiplexing line, wherein N is a non-negative integer; and/or

the amount of data read or to be written in response to each access address is equal to a burst length*8 bits, wherein the burst length is preset in a mode register.

15 . The method according to claim 7 , wherein,

the further preset number is preset in a mode register based on the time required to complete a word line switching process and/or the time required for refresh operation, as well as a frequency of the clock cycles.

16 . The method according to claim 1 , wherein,

the specified fixed-number random access mode is started by receiving a predetermined command via the data/address multiplexing line, or started by a preset mode register.

17 . The method according to claim 1 , wherein,

the fixed number is determined by receiving a predetermined command or by a preset mode register.

18 . The method according to claim 1 , wherein,

the order of the read or written data transmitted via the data/address multiplexing line is consistent with the order of the received addresses.

19 . A memory comprising:

a memory array;

an access interface for external access to the memory array, the access interface comprising at least one data/address multiplexing line for transmitting data and address; and

a control component configured to control the memory to perform the method according to claim 1 .