IP Library Granted Patent US 12683080
Granted Patent B2
US 12683080 · App. 18/601,290 · Granted Jul 14, 2026

Electronic component and substrate with electronic component embedded therein

Inventors: Ho In Jun (Suwon-si, KR); Eon Ju Noh (Suwon-si, KR); Myung Duk Seo (Suwon-si, KR); Kyeong Jun Kim (Suwon-si, KR); Kyo Sik Kim (Suwon-si, KR); Da Jeong Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
H01G4/2325H01G4/30H05K1/185H05K2201/10015
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12683080
App. No.
18/601,290
Granted
Jul 14, 2026
Kind
B2
Abstract

An electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body, connected to the internal electrode, and including a low-reflection layer. Brightness of a surface of the low-reflection layer is lower than brightness of a surface of the body.

Claims (84)

1 . An electronic component comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body, connected to the internal electrode, and including a low-reflection layer,

wherein brightness of a surface of the low-reflection layer is lower than brightness of a surface of the body,

the low-reflection layer includes a plating layer containing a Ni—Zn-based material, and

the Ni—Zn-based material further contains S.

2 . The electronic component of claim 1 , wherein a brightness value of Hue Saturation Value (HSV) measured in an image of the surface of the low-reflection layer is 45% or less.

3 . The electronic component of claim 1 , wherein the brightness of the surface of the low-reflection layer and the brightness of the surface of the body are obtained by measuring intensity of reflected light of white light emitted from the same light source.

4 . The electronic component of claim 3 , wherein the body includes a first surface and a second surface opposing each other in a first direction in which the dielectric layer and the internal electrode are stacked, and

a portion of the external electrode covers a portion of the first surface of the body.

5 . The electronic component of claim 4 , wherein the brightness of the surface of the body is measured on another portion of the first surface of the body, and the brightness of the surface of the low-reflection layer is measured on a surface of an area covering the portion of the first surface of the body.

6 . The electronic component of claim 4 , wherein a thickness of an area covering the portion of the first surface of the body in the low-reflection layer is 5 μm or more.

7 . The electronic component of claim 1 , wherein the plating layer contains needle-shaped particles.

8 . The electronic component of claim 7 , wherein the needle-shaped particles contain at least one of Na and Cl.

9 . The electronic component of claim 1 , wherein the low-reflection layer includes metal particles and an oxide film disposed on surfaces of the metal particles.

10 . The electronic component of claim 9 , wherein the metal particles contain Ni, and the oxide film contains Ni 2 O 3 .

11 . The electronic component of claim 9 , wherein the low-reflection layer further includes an insulator in which the metal particles are dispersed.

12 . The electronic component of claim 9 , wherein the metal particles include at least one particle being in contact with the insulator and the oxide film.

13 . The electronic component of claim 1 , wherein the low-reflection layer includes a Ni sputtering layer.

14 . The electronic component of claim 13 , wherein the low-reflection layer includes an Ni—Zn alloy.

15 . The electronic component of claim 1 , wherein the low-reflection layer is disposed on an outermost side of the external electrode.

16 . The electronic component of claim 1 , wherein the low-reflection layer is directly connected to the internal electrode.

17 . The electronic component of claim 1 , wherein the external electrode further includes a base layer disposed between the body and the low-reflection layer.

18 . The electronic component of claim 17 , wherein the base layer includes at least one of Pd and Cu.

19 . The electronic component of claim 1 , wherein the body includes a first surface and a second surface opposing each other in a first direction in which the dielectric layer and the internal electrode are stacked, a third surface and a fourth surface located between the first and second surfaces and opposing each other in a second direction, and a fifth surface and a sixth surface located between the first and second surfaces and opposing each other in a third direction,

the internal electrode includes a first internal electrode and a second internal electrode disposed alternately with each other, and

the external electrode includes a first external electrode and a second external electrode connected to the first and second internal electrodes, respectively.

20 . The electronic component of claim 19 , wherein the first and second internal electrodes extend to the third and fourth surfaces of the body, respectively, and

the first and second external electrodes cover the third and fourth surfaces of the body, respectively.

21 . The electronic component of claim 19 , wherein the first and second internal electrodes extend to the fifth and sixth surfaces of the body, respectively,

the first and second external electrodes cover the fifth and sixth surfaces of the body, respectively, and

a length of the body in the second direction is greater than a length in the third direction.

22 . The electronic component of claim 19 , wherein the first internal electrode extends to the third and fourth surfaces of the body, and the second internal electrode extends to the third and fourth surfaces of the body, and

the first and second external electrodes are alternately disposed in the third direction on the third and fourth surfaces of the body.

23 . The electronic component of claim 19 , wherein the first internal electrode extends to the first surface of the body, and the second internal electrode extends to the first surface of the body, and

the first and second external electrodes cover the first surface of the body.

24 . The electronic component of claim 23 , wherein the first external electrode is provided as a plurality of first external electrodes, and the second external electrode is disposed between the plurality of first external electrodes based on the third direction.

25 . The electronic component of claim 23 , wherein the first and second external electrodes are not provided on the second surface of the body.

26 . The electronic component of claim 25 , wherein the first and second external electrodes are not provided on the fifth and sixth surfaces of the body.

27 . The electronic component of claim 19 , wherein the first internal electrode extends to the fifth and sixth surfaces of the body, and the second internal electrode extends to the third and fourth surfaces of the body, and

the first external electrode covers the fifth and sixth surfaces of the body, and the second external electrode covers the third and fourth surfaces of the body.

28 . An electronic component comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body, connected to the internal electrode, and including a low-reflection layer,

wherein a brightness value of HSV measured in an image of a surface of the low-reflection layer is 45% or less,

the low-reflection layer includes a plating layer containing Ni—Zn-based material, and

the Ni—Zn-based material further contains S.

29 . The electronic component of claim 28 , wherein the plating layer contains needle-shaped particles.

30 . The electronic component of claim 29 , wherein the needle-shaped particles contain at least one of Na and Cl.

31 . The electronic component of claim 28 , wherein the low-reflection layer includes metal particles and an oxide film disposed on surfaces of the metal particles.

32 . The electronic component of claim 31 , wherein the metal particles contain Ni, and the oxide film contains Ni 2 O 3 .

33 . The electronic component of claim 31 , wherein the low-reflection layer further includes an insulator in which the metal particles are dispersed.

34 . The electronic component of claim 31 , wherein the metal particles include at least one particle being in contact with the insulator and the oxide film.

35 . The electronic component of claim 28 , wherein the low-reflection layer includes a Ni sputtering layer.

36 . The electronic component of claim 35 , wherein the low-reflection layer includes an Ni—Zn alloy.

37 . A substrate with an electronic component embedded therein, comprising:

an insulating layer;

a circuit layer; and

the electronic component connected to the circuit layer, wherein the electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body, connected to the internal electrode and including a low-reflection layer, and brightness of a surface of the low-reflection layer is lower than brightness of a surface of the body,

the low-reflection layer includes a plating layer containing a Ni—Zn-based material, and

the Ni—Zn-based material further contains S.

38 . An electronic component comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body, connected to the internal electrode, and including a Ni—Zn-based material as an outermost portion of the external electrode, and

the Ni—Zn-based material further includes S.

39 . The electronic component of claim 38 , wherein a thickness of the Ni—Zn-based material is 5 μm or more.

40 . The electronic component of claim 38 , wherein the Ni—Zn-based material includes needle-shaped particles.

41 . The electronic component of claim 40 , wherein the needle-shaped particles contain at least one of Na and Cl.

42 . The electronic component of claim 38 , wherein the Ni—Zn-based material includes an Ni—Zn alloy.

43 . The electronic component of claim 38 , wherein the Ni—Zn-based material is directly connected to the internal electrode.

44 . The electronic component of claim 38 , wherein the external electrode further includes a base layer disposed between the body and the Ni—Zn-based material.

45 . The electronic component of claim 44 , wherein the base layer includes at least one of Pd and Cu.

46 . An electronic component comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body, connected to the internal electrode, and including a layer including Ni particles and an oxide film disposed on surfaces of the Ni particles as an outermost layer of the external electrode, and

the external electrode further incudes a low-reflection layer,

the low-reflection layer includes a plating layer containing a Ni—Zn-based material, and

the Ni—Zn-based material further includes S.

47 . The electronic component of claim 46 , wherein the oxide film contains Ni 2 O 3 .

48 . The electronic component of claim 46 , wherein the layer further includes an insulator in which the Ni particles are dispersed.

49 . The electronic component of claim 46 , wherein the Ni particles include at least one particle being in contact with an insulator and the oxide film.

50 . The electronic component of claim 46 , wherein the layer including the Ni particles and the oxide film is directly connected to the internal electrode.

51 . The electronic component of claim 46 , wherein the external electrode further includes a base layer disposed between the body and the layer including the Ni particles and the oxide film.

52 . The electronic component of claim 51 , wherein the base layer includes at least one of Pd and Cu.