IP Library › Granted Patent US 12683081
Granted Patent B2
US 12683081 · App. 18/603,515 · Granted Jul 14, 2026

Electronic component structure with multilayer connection portion

Inventors: Toshihiro Iguchi (Tokyo, JP); Tomohisa Fukuoka (Tokyo, JP)
Assignee: TDK CORPORATION
H01G4/2325H01G4/30
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Quick Facts
Patent No.
US 12683081
App. No.
18/603,515
Granted
Jul 14, 2026
Kind
B2
Abstract

An electronic component structure includes: a first electronic component; a second electronic component; a low melting point layer located between the first electronic component and the second electronic component and containing a first metal material having a melting point of 300° C. or lower; and a high melting point layer located between the first electronic component and the second electronic component and containing a second metal material having a melting point of 400° C. or higher. In the electronic component structure, the first electronic component and the second electronic component are connected to each other by a multilayer connection portion formed by overlapping the low melting point layer and the high melting point layer.

Claims (48)

1 . An electronic component structure, comprising:

a first electronic component;

a second electronic component;

a low melting point layer located between the first electronic component and the second electronic component and containing a first metal material having a melting point of 300° C. or lower; and

a high melting point layer located between the first electronic component and the second electronic component and containing a second metal material having a melting point of 400° C. or higher, wherein

the first electronic component and the second electronic component are connected to each other by a multilayer connection portion formed by overlapping the low melting point layer and the high melting point layer,

the high melting point layer comprises a center portion disposed in a center in a first direction perpendicular to a stacking direction of the multilayer connection portion, and peripheral portions disposed on both sides of the center portion so as to sandwich the center portion along the first direction and having a thickness larger than that of the center portion, and

the low melting point layer is continuously in contact with the high melting point layer from one of the peripheral portions sandwiching the center portion to the other of the peripheral portions via the center portion.

2 . The electronic component structure according to claim 1 , wherein

the second metal material comprises an intermetallic compound.

3 . The electronic component structure according to claim 1 , wherein

the first metal material comprises Sn alone or a solid solution containing Sn as a main component.

4 . The electronic component structure according to claim 1 , wherein

the multilayer connection portion includes a stacked structure of three or more layers with one high melting point layer sandwiched between two low melting point layers.

5 . The electronic component structure according to claim 1 , wherein

the first metal material comprises Sn alone or a solid solution containing Sn as a main component, and

the high melting point layer contains the first metal material at a content ratio smaller than that of the low melting point layer.

6 . The electronic component structure according to claim 1 , wherein

the first metal material comprises Sn alone or a solid solution containing Sn as a main component, and

the high melting point layer contains the second metal material which is an intermetallic compound, the first metal material, and a third metal material comprising Cu alone or a solid solution containing Cu as a main component.

7 . The electronic component structure according to claim 1 , wherein

an average thickness of the low melting point layer is 10 μm to 60 μm.

8 . The electronic component structure according to claim 1 , wherein

an average thickness of the high melting point layer is 30 μm to 100 μm.

9 . An electronic component structure, comprising:

a first electronic component;

a metal plate;

a low melting point layer located between the first electronic component and the metal plate and containing a first metal material having a melting point of 300° C. or lower; and

a high melting point layer located between the first electronic component and the metal plate and containing a second metal material having a melting point of 400° C. or higher, wherein

the first electronic component and the metal plate are connected to each other by a multilayer connection portion formed by overlapping the low melting point layer and the high melting point layer,

the high melting point layer comprises a center portion disposed in a center in a first direction perpendicular to a stacking direction of the multilayer connection portion, and peripheral portions disposed on both sides of the center portion so as to sandwich the center portion along the first direction and having a thickness larger than that of the center portion, and

the low melting point layer is continuously in contact with the high melting point layer from one of the peripheral portions sandwiching the center portion to the other of the peripheral portions via the center portion.

10 . The electronic component structure according to claim 9 , wherein

the second metal material comprises an intermetallic compound.

11 . The electronic component structure according to claim 9 , wherein

the first metal material is Sn alone or a solid solution containing Sn as a main component.

12 . The electronic component structure according to claim 9 , wherein

the multilayer connection portion includes a stacked structure of three or more layers with one high melting point layer sandwiched between two low melting point layers.

13 . The electronic component structure according to claim 9 , wherein

the first metal material comprises Sn alone or a solid solution containing Sn as a main component, and

the high melting point layer contains the first metal material at a content ratio smaller than that of the low melting point layer.

14 . The electronic component structure according to claim 9 , wherein

the first metal material comprises Sn alone or a solid solution containing Sn as a main component, and

the high melting point layer contains the second metal material which is an intermetallic compound, the first metal material, and a third metal material comprising Cu alone or a solid solution containing Cu as a main component.

15 . The electronic component structure according to claim 9 , wherein

an average thickness of the low melting point layer is 10 μm to 60 μm.

16 . The electronic component structure according to claim 9 , wherein

an average thickness of the high melting point layer is 30 μm to 100 μm.