IP Library Granted Patent US 12683114
Granted Patent B2
US 12683114 · App. 18/284,532 · Granted Jul 14, 2026

Electron beam modulation device and electron beam modulation method

Inventors: Yuuki Uesugi (Sendai, JP); Shunichi Sato (Sendai, JP); Yuichi Kozawa (Sendai, JP)
Assignee: TOHOKU UNIVERSITY
H01J37/153H01J37/28
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Quick Facts
Patent No.
US 12683114
App. No.
18/284,532
Granted
Jul 14, 2026
Kind
B2
Abstract

An electron beam modulation device according to the present disclosure includes a light source configured to emit laser light, a polarization conversion part including a modulation plane configured to modulate a direction of polarization and an intensity of the laser light emitted from the light source, and a condensing element configured to condense the laser light passing through the modulation plane. In a focal plane of the condensing element, a round light is generated that includes a trapping potential region in which electrons included in an electron beam incident on the focal plane are attracted and a repulsive potential region in which the electrons are repelled. The round light has rotational symmetry about an optical axis of the laser light when viewed along the optical axis.

Claims (4)

1 . An electron beam modulation method comprising:

modulating a direction of polarization and an intensity of laser light emitted from a light source to a predetermined directional distribution and a predetermined intensity distribution, respectively;

condensing, by a condensing element, the laser light modulated to generate round light including a trapping potential region in which electrons are attracted and a repulsive potential region in which the electrons are repelled, the round light having rotational symmetry about an optical axis of the laser light when viewed along the optical axis; and

modulating an electron beam incident on the round light in accordance with a distribution of the trapping potential region and the repulsive potential region.