Scanning electron microscopy-based sample analysis

1 . A method comprising:

performing, when a sample has a first temperature, a first scanning electron microscopy (SEM) process on the sample to generate a first SEM map;

performing, when the sample has a second temperature different than the first temperature, a second SEM process on the sample to generate a second SEM map; and

generating, based upon the first SEM map and the second SEM map, a dopant distribution map indicative of a first dopant concentration in a first region of the sample and a second dopant concentration in a second region of the sample.

2 . The method of claim 1 , wherein:

the sample comprises a filled electron valence band.

3 . The method of claim 1 , wherein:

performing the first SEM process comprises:

emitting a first electron beam to the sample when the sample has the first temperature;

detecting first electrons emitted from the sample via interactions of electrons of the first electron beam with the sample;

determining a first measure of electrons based upon the first electrons; and

generating the first SEM map based upon the first measure of electrons; and

performing the second SEM process comprises:

emitting a second electron beam to the sample when the sample has the second temperature;

detecting second electrons emitted from the sample via interactions of electrons of the second electron beam with the sample;

determining a second measure of electrons based upon the second electrons; and

generating the second SEM map based upon the second measure of electrons.

4 . The method of claim 3 , wherein:

the first measure of electrons comprises a first measure of secondary electrons emitted from the sample; and

the second measure of electrons comprises a second measure of secondary electrons emitted from the sample.

5 . The method of claim 1 , wherein:

performing the first SEM process comprises performing the first SEM process using a first scanning electron microscope; and

performing the second SEM process comprises performing the second SEM process using the first scanning electron microscope.

6 . The method of claim 1 , wherein:

the first SEM map is indicative of a first measure of electrons relative to the first region of the sample;

the second SEM map is indicative of a second measure of electrons relative to the first region of the sample; and

generating the dopant distribution map comprises:

determining, based upon the first measure of electrons, a first difference between a first Fermi level associated with the sample and a first valence band energy level associated with the sample;

determining, based upon the second measure of electrons, a second difference between a second Fermi level associated with the sample and a second valence band energy level associated with the sample; and

determining the first dopant concentration in the first region based upon the first difference and the second difference.

7 . The method of claim 1 , comprising:

at least one of prior to or during the first SEM process, heating the sample.

8 . The method of claim 7 , wherein:

the sample is supported by a sample stage of a scanning electron microscope used to perform the first SEM process; and

heating the sample comprises directing thermal energy, to the sample, via the sample stage.

9 . The method of claim 1 , wherein:

a difference between the first temperature and the second temperature is at least 10° Celsius.

10 . The method of claim 1 , comprising:

applying a first bias to the sample during the first SEM process; and

applying a second bias to the sample during the second SEM process.