IP Library › Granted Patent US 12683124
Granted Patent B2
US 12683124 · App. 18/963,894 · Granted Jul 14, 2026

Substrate processing apparatus using plasma phase shift

Inventors: Songwhe Herr (Seongnam-si, KR); Jeongsu Lee (Pyeongtaek-si, KR); Dongok Shin (Suwon, KR); DaeYoun Kim (Seo-gu, KR)
Assignee: ASM IP Holding B.V.
H01J37/32174H01J37/32889H01J2237/3321
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Quick Facts
Patent No.
US 12683124
App. No.
18/963,894
Filed
Nov 29, 2024
Granted
Jul 14, 2026
Kind
B2
Art Unit
2845
USPC
315/111.21
Abstract

A substrate processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process substrates; a plasma generator or generator coupled to the plurality of reaction chambers individually and configured to generate plasma or plasma power with a certain frequency and a certain phase, and further configured to provide the generated plasma or plasma power to the plurality of reaction chambers; and a control circuit connected to the plasma generator or generator and configured to adjust the phase of the plasma or plasma power generated by the plasma generator or generator; wherein, the control circuit is further configured to shift the phase of the generated plasma or plasma power provided to the plurality of reaction chambers independently.

Claims (28)

1 . A substrate processing system, the system comprising:

a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, wherein each of the reaction chambers is configured to process substrates;

at least one generator coupled to the first reaction chamber, second reaction chamber, third reaction chamber, and fourth reaction chamber, wherein the system is configured to provide a first plasma power comprising a first phase to the first reaction chamber, a second plasma power comprising a second phase to the second reaction chamber, a third plasma power comprising a third phase to the third reaction chamber, and a fourth plasma power comprising a fourth phase to the fourth reaction chamber; and

at least one control circuit connected to the at least one generator, wherein the at least one control circuit is configured to independently control the first phase, the second phase, the third phase, and the fourth phase;

wherein the first and third phases are within 10 degrees, and wherein the second and fourth phases are between 170 and 190 degrees offset from the first phase.

2 . The substrate processing system according to claim 1 , wherein the at least one control circuit is further configured to control the first, second, third, and fourth phases in real-time.

3 . The substrate processing system according to claim 1 , wherein the reaction chambers are arranged on the platform in the shape of a square with the first reaction chamber adjacent to the second reaction chamber and the fourth reaction chamber.

4 . The substrate processing system according to claim 1 , wherein the second and fourth phases are between 175 and 185 degrees offset from the first phase.

5 . A substrate processing system, the system comprising:

a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, wherein each of the reaction chambers is configured to process substrates;

at least one generator coupled to the first reaction chamber, second reaction chamber, third reaction chamber, and fourth reaction chamber, wherein the system is configured to provide a first plasma power comprising a first phase to the first reaction chamber, a second plasma power comprising a second phase to the second reaction chamber, a third plasma power comprising a third phase to the third reaction chamber, and a fourth plasma power comprising a fourth phase to the fourth reaction chamber; and

at least one control circuit connected to the at least one generator, wherein the at least one control circuit is configured to independently control the first phase, the second phase, the third phase, and the fourth phase;

wherein the second phase is between 185 to 205 degrees offset from the first phase.

6 . The substrate processing system according to claim 5 , wherein the third phase is between 12 and 32 degrees offset from the first phase.

7 . The substrate processing system according to claim 6 , wherein the fourth phase is between 188 and 208 degrees offset from the first phase.

8 . The substrate processing system according to claim 5 , wherein the at least one control circuit is further configured to control the first, second, third, and fourth phases in real-time.

9 . The substrate processing system according to claim 5 , wherein the reaction chambers are arranged on the platform in the shape of a square with the first reaction chamber adjacent to the second reaction chamber and the fourth reaction chamber.

10 . The substrate processing system according to claim 5 , wherein the second phase is between 190 to 200 degrees offset from the first phase.

11 . The substrate processing system according to claim 10 , the third phase is between 17 and 27 degrees offset from the first phase.

12 . The substrate processing system according to claim 11 , wherein the fourth phase is between 193 and 203 degrees offset from the first phase.

13 . A substrate processing system, the system comprising:

a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, wherein each of the reaction chambers is configured to process substrates;

at least one generator coupled to the first reaction chamber, second reaction chamber, third reaction chamber, and fourth reaction chamber, wherein the system is configured to provide a first plasma power comprising a first phase to the first reaction chamber, a second plasma power comprising a second phase to the second reaction chamber, a third plasma power comprising a third phase to the third reaction chamber, and a fourth plasma power comprising a fourth phase to the fourth reaction chamber; and

at least one control circuit connected to the at least one generator, wherein the at least one control circuit is configured to independently control the first phase, the second phase, the third phase, and the fourth phase;

wherein the second phase is between 80 and 100 degrees offset from the first phase, the third phase is between 170 and 190 degrees offset from the first phase, and the fourth phase is between 260 and 280 degrees offset from the first phase.

14 . The substrate processing system according to claim 13 , wherein the at least one control system is further configured to control the first, second, third, and fourth phases in real-time.

15 . The substrate processing system according to claim 13 , wherein the reaction chambers are arranged on the platform in a shape of a square.

16 . The substrate processing system according to claim 13 , wherein the second phase is between 85 to 95 degrees offset from the first phase, the third phase is between 175 and 185 degrees offset from the first phase, and the fourth phase is between 265 and 275 degrees offset from the first phase.