Chemical vapor deposition apparatus with cleaning gas flow guiding member

1 . A chemical vapor deposition (CVD) apparatus, comprising:

a CVD chamber including a plurality of wall portions;

a pedestal disposed inside the CVD chamber, configured to support a substrate;

a gas inlet port disposed on and through one wall portion of the plurality of wall portions and below a substrate support portion of the pedestal; and

a gas flow guiding member disposed inside the CVD chamber, coupled to the gas inlet port, and configured to redirect cleaning gases from the gas inlet port into the CVD chamber;

wherein the gas flow guiding member has a curved plate structure and is arranged to extend along a sidewall of the plurality of wall portions,

wherein the gas flow guiding member is elongated in a longitudinal direction, and defines two first gas outlet holes located at respective terminal end portions of the gas flow guiding member in the longitudinal direction, wherein the gas flow guiding member, the sidewall, and a bottom wall of the plurality of wall portions define directly adjacent and contacting surfaces of each of the two first gas outlet holes,

wherein the gas flow guiding member has an upper edge and a lower edge in contact with the sidewall and the bottom wall, respectively,

wherein the gas flow guiding member further has a protrusion extending horizontally outward from a portion of the upper edge of the gas flow guiding member, and the sidewall has a recess configured to receive and engage the protrusion, and

wherein the protrusion is at the same level with the upper edge of the gas flow guiding member, which is the top of the gas flow guiding member.

2 . The CVD apparatus as claimed in claim 1 , wherein the gas flow guiding member is extended along the sidewall, and a predetermined angle is formed between the two first gas outlet holes in a top view.

3 . The CVD apparatus as claimed in claim 1 , wherein the gas flow guiding member further defines a plurality of second gas outlet holes disposed between the two first gas outlet holes.

4 . The CVD apparatus as claimed in claim 3 , wherein the plurality of second gas outlet holes are arranged at equal intervals.

5 . The CVD apparatus as claimed in claim 1 , wherein the two first gas outlet holes are positioned equidistant from the gas inlet port.

6 . A chemical vapor deposition (CVD) apparatus, comprising:

a CVD chamber including a top wall, a bottom wall opposite the top wall, and a sidewall between the top wall and the bottom wall;

a pedestal disposed inside the CVD chamber, configured to support a substrate;

a first gas inlet port disposed on the top wall above a substrate support portion of the pedestal;

a gas distribution showerhead disposed adjacent to the top wall, configured to dispense cleaning gases from the first gas inlet port into the CVD chamber;

a second gas inlet port disposed on and through the bottom wall or the sidewall adjacent to the bottom wall below the substrate support portion of the pedestal; and

a gas flow guiding member disposed adjacent to the bottom wall, coupled to the second gas inlet port, and configured to redirect cleaning gases from the second gas inlet port into the CVD chamber through a plurality of gas outlet holes;

wherein the gas flow guiding member has a curved plate structure and is arranged to extend along the sidewall,

wherein the gas flow guiding member is elongated in a longitudinal direction, and the plurality of gas outlet holes include two first gas outlet holes located at respective terminal end portions of the gas flow guiding member in the longitudinal direction, wherein the gas flow guiding member, the sidewall, and the bottom wall define directly adjacent and contacting surfaces of each of the two first gas outlet holes,

wherein the gas flow guiding member has an upper edge and a lower edge in contact with the sidewall and the bottom wall, respectively,

wherein the gas flow guiding member further has a protrusion extending horizontally outward from a portion of the upper edge of the gas flow guiding member, and the sidewall has a recess configured to receive and engage the protrusion, and

wherein the protrusion is at the same level with the upper edge of the gas flow guiding member, which is the top of the gas flow guiding member.

7 . The CVD apparatus as claimed in claim 6 , wherein the pedestal is located in a center of the CVD chamber, and the two first gas outlet holes of the gas flow guiding member are located on opposite sides of the pedestal in a top view, so that the cleaning gases from the two first gas outlet holes flow around the pedestal and reach a portion of the sidewall located on the opposite side of the second gas inlet port relative to the pedestal.

8 . The CVD apparatus as claimed in claim 6 , wherein the plurality of gas outlet holes further includes a plurality of second gas outlet holes disposed between the two first gas outlet holes.

9 . The CVD apparatus as claimed in claim 8 , wherein the plurality of second gas outlet holes are arranged at unequal intervals.

10 . The CVD apparatus as claimed in claim 6 , wherein the two first gas outlet holes are positioned equidistant from the second gas inlet port.

11 . The CVD apparatus as claimed in claim 6 , wherein the two first gas outlet holes are positioned at different distances from the second gas inlet port.

12 . A chemical vapor deposition (CVD) apparatus, comprising:

a CVD chamber including a top wall, a bottom wall opposite the top wall, and a sidewall between the top wall and the bottom wall;

a pedestal disposed inside the CVD chamber, configured to support a substrate;

a gas inlet port disposed on and through the bottom wall or the sidewall adjacent to the bottom wall below a substrate support portion of the pedestal; and

a gas flow guiding member disposed inside the CVD chamber, coupled to the gas inlet port, and configured to redirect cleaning gases from the gas inlet port into the CVD chamber;

wherein the gas flow guiding member, being elongated in a longitudinal direction, extends along the sidewall and has a non-tubular structure, wherein when viewed in the longitudinal direction, the gas flow guiding member has an open cross-section with an upper edge and a lower edge on opposite sides thereof, and the upper edge and the lower edge are directly coupled to an inner surface of the sidewall and an inner surface of the bottom wall, respectively, to form a gas flow channel among the gas flow guiding member, the sidewall, and the bottom wall, and wherein two first gas outlet holes are located at respective terminal end portions of the gas flow channel in the longitudinal direction, wherein the gas flow guiding member, the sidewall, and the bottom wall define directly adjacent and contacting surfaces of each of the two first gas outlet holes,

wherein the gas flow guiding member further has a protrusion extending horizontally outward from a portion of the upper edge of the gas flow guiding member, and the sidewall has a recess configured to receive and engage the protrusion, and

wherein the protrusion is at the same level with the upper edge of the gas flow guiding member, which is the top of the gas flow guiding member.

13 . The CVD apparatus as claimed in claim 12 , wherein the cross-section of the non-tubular structure is in a quarter-circle shape or a half-U shape.

14 . The CVD apparatus as claimed in claim 12 , wherein the non-tubular structure is an elongated and curved plate structure.

15 . The CVD apparatus as claimed in claim 12 , wherein the cross-section of the entire gas flow guiding member is substantially the same in shape and size.

16 . The CVD apparatus as claimed in claim 12 , wherein the two first gas outlet holes of the gas flow guiding member are located on opposite sides of the pedestal in a top view, so that the cleaning gases from the two first gas outlet holes flow around the pedestal and reach a portion of the sidewall located on the opposite side of the gas inlet port relative to the pedestal.

17 . The CVD apparatus as claimed in claim 12 , wherein the two first gas outlet holes are positioned equidistant from the gas inlet port.

18 . The CVD apparatus as claimed in claim 12 , wherein the two first gas outlet holes are positioned at different distances from the gas inlet port.

19 . The CVD apparatus as claimed in claim 1 , wherein when viewed in the longitudinal direction, the gas flow guiding member has a non-tubular structure.

20 . The CVD apparatus as claimed in claim 19 , wherein when viewed in the longitudinal direction, a cross-section of the non-tubular structure is in a quarter-circle shape or a half-U shape.