Batch type substrate processing apparatus

1 . A batch type substrate processing apparatus comprising:

a reaction tube configured to provide a processing space in which a plurality of substrates are accommodated; and

a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall extending in a longitudinal direction of the reaction tube, and configured to generate plasma in the discharge space by a plurality of electrodes, wherein the plurality of electrodes are disposed in a circumferential direction of the reaction tube with a rod shape extending in the longitudinal direction of the reaction tube,

wherein the plurality of electrodes comprise:

first and second power supply electrodes spaced apart from each other; and

first and second ground electrodes provided between the first and second power supply electrodes in the discharge space to be spaced apart from the first and second power supply electrodes, wherein no electrodes are present between the first and second ground electrodes,

wherein the plurality of electrodes are configured to generate capacitively coupled plasma (CCP) in each space between the first power supply electrode and the first ground electrode and between the second power supply electrode and the second ground electrode,

wherein the first power supply electrode is closer to the first ground electrode than the second ground electrode such that a voltage can be induced to the first ground electrode by the voltage applied to the first power supply electrode, and

wherein the second power supply electrode is closer to the second ground electrode than the first ground electrode such that a voltage can be induced to the second ground electrode by the voltage applied to the second power supply electrode.

2 . The batch type substrate processing apparatus of claim 1 , wherein the first and second ground electrodes are spaced apart from each other.

3 . The batch type substrate processing apparatus of claim 2 , wherein a spaced distance between the first and second ground electrodes is less than or equal to a spaced distance between the first power supply electrode and the first ground electrode, which are paired with each other.

4 . The batch type substrate processing apparatus of claim 1 , further comprising an electrode protection part configured to protect the first and second power supply electrodes and the first and second ground electrodes,

wherein the electrode protection part comprises:

a plurality of first electrode protection tubes configured to surround the first and second power supply electrodes, respectively;

a plurality of second electrode protection tubes configured to surround the first and second ground electrodes, respectively; and

a bridge part configured to connect the first electrode protection tube and the second electrode protection tube, which face each other, to each other.

5 . The batch type substrate processing apparatus of claim 4 , wherein the bridge part is configured to allow the first electrode protection tube and the second electrode protection tube to communicate with each other, and

wherein the batch type substrate processing apparatus further comprises:

a protection gas supply part connected to one electrode protection tube of the first electrode protection tube and the second electrode protection tube, which communicate with each other by the bridge part, to supply a protection gas; and

a protection gas discharge part connected to the other electrode protection tube of the first electrode protection tube and the second electrode protection tube to discharge the protection gas supplied into the one electrode protection tube.

6 . The batch type substrate processing apparatus of claim 5 , wherein the protection gas comprises an inert gas.

7 . The batch type substrate processing apparatus of claim 1 , further comprising:

a high frequency power source part configured to supply high frequency power; and

a power distribution part provided between the high frequency power source part and the first and second power supply electrodes and configured to distribute the high frequency power supplied from the high frequency power source part so as to provide the distributed high frequency power to the first power supply electrode and the second power supply electrode.

8 . The batch type substrate processing apparatus of claim 7 , wherein the power distribution part comprises a variable capacitor provided between a distribution point, at which the high frequency power is distributed to the first power supply electrode and the second power supply electrode, and at least one of the first and second power supply electrodes.

9 . The batch type substrate processing apparatus of claim 1 , further comprising a control part configured to selectively adjust high frequency power applied to the first power supply electrode and the second power supply electrode in accordance with a state of the plasma.

10 . The batch type substrate processing apparatus of claim 1 , further comprising a plurality of gas supply tubes, which are provided outside both sides of the plurality of electrodes along a circumferential direction of the reaction tube to supply process gas decomposed by the plasma into the discharge space through a discharge hole.

11 . The batch type substrate processing apparatus of claim 10 , wherein the plurality of gas supply tubes are symmetrically disposed at both sides of a radial direction extending from a central axis of the reaction tube to a center of the discharge space.