Plasma processing apparatus and method of manufacturing semiconductor device

1 . A method of manufacturing a semiconductor device, the method comprising:

arranging a focus ring around an upper outer circumference of a substrate support;

loading a substrate having a first diameter on the substrate support in a plasma chamber;

performing a plasma process on the substrate;

unloading the substrate from the plasma chamber;

loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support; and

performing a plasma cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,

wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.

2 . The method of claim 1 , wherein the loading the dummy substrate comprises:

raising a plurality of lift pins from within the substrate support;

placing the dummy substrate on the raised plurality of lift pins; and

lowering the plurality of lift pins such that the dummy substrate is seated on the substrate support.

3 . The method of claim 2 , wherein the placing the dummy substrate on the raised plurality of lift pins comprises:

positioning upper end portions of the plurality of lift pins so as to be inserted into a plurality of positioning grooves in a lower surface of the dummy substrate, respectively, to self-align the dummy substrate.

4 . The method of claim 3 , wherein each of the plurality of positioning grooves has a tapered shape in which a surface area gradually increases with a predetermined angle for insertion of the upper end portions of the plurality of lift pins.

5 . The method of claim 1 , wherein the loading the dummy substrate comprises:

exposing an inner edge region of the focus ring based on the dummy substrate being placed on the substrate support.

6 . The method of claim 1 , wherein the performing the plasma cleaning process on the dummy substrate comprises:

introducing a cleaning gas into the plasma chamber; and

generating plasma.

7 . The method of claim 6 , wherein the cleaning gas comprises at least one of boron chlorine compound (BCl x ), silicon chlorine compound (SiCl x ), sulfur hexafluoride (SF 6 ), nitrogen trifluoride (NF 3 ), chlorine (Cl 2 ), silicon tetrabromide (SiBr 4 ), butadiene hexafluoride (C 4 F 6 ), octafluorocyclobutane (C 4 F 8 ), carbon pentafluoride (CF 5 ), and fluoroform (CHF 3 ).

8 . The method of claim 1 , wherein a difference between the first diameter of the substrate and the second diameter of the dummy substrate is within a range of 0.5 mm to 2 mm.

9 . The method of claim 1 , wherein the second diameter of the dummy substrate is within a range of 250 mm to 350 mm.

10 . A method of manufacturing a semiconductor device, the method comprising:

arranging a focus ring around an upper outer circumference of a substrate support;

loading a substrate having a first diameter on the substrate support in a plasma chamber;

performing a plasma dry etching process on the substrate;

unloading the substrate from the plasma chamber;

loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support using a plurality of lift pins; and

performing a plasma dry cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,

wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.

11 . The method of claim 10 , wherein the loading the dummy substrate comprises:

raising the plurality of lift pins from within the substrate support;

placing the dummy substrate on the raised plurality of lift pins; and

lowering the plurality of lift pins such that the dummy substrate is seated on the substrate support.

12 . The method of claim 11 , wherein the placing the dummy substrate on the raised plurality of lift pins comprises:

positioning upper end portions of the plurality of lift pins so as to be inserted into a plurality of positioning grooves in a lower surface of the dummy substrate, respectively, to self-align the dummy substrate.

13 . The method of claim 12 , wherein each of the plurality of positioning grooves has a tapered shape in which a surface area gradually increases with a predetermined angle for insertion of the upper end portions of the plurality of lift pins.

14 . The method of claim 10 , wherein the loading the dummy substrate comprises:

exposing an inner edge region of the focus ring based on the dummy substrate being placed on the substrate support.

15 . The method of claim 10 , wherein the performing the plasma dry cleaning process on the dummy substrate comprises:

introducing a cleaning gas into the plasma chamber; and

generating plasma.

16 . The method of claim 15 , wherein the cleaning gas comprises at least one of boron chlorine compound (BCl x ), silicon chlorine compound (SiCl x ), sulfur hexafluoride (SF 6 ), nitrogen trifluoride (NF 3 ), chlorine (Cl 2 ), silicon tetrabromide (SiBr 4 ), butadiene hexafluoride (C 4 F 6 ), octafluorocyclobutane (C 4 F 8 ), carbon pentafluoride (CF 5 ), and fluoroform (CHF 3 ).

17 . The method of claim 10 , wherein a difference between the first diameter of the substrate and the second diameter of the dummy substrate is within a range of 0.5 mm to 2 mm.

18 . A method of manufacturing a semiconductor device, the method comprising:

arranging a focus ring around an upper outer circumference of a substrate support;

loading a substrate having a first diameter on a on the substrate support in a plasma chamber;

performing a plasma dry etching process on the substrate;

unloading the substrate from the plasma chamber;

loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support; and

performing a plasma dry cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,

wherein loading the dummy substrate comprises raising a plurality of lift pins from within the substrate support, inserting upper end portions of the plurality of lift pins into a plurality of positioning grooves disposed on a lower surface of the dummy substrate, to align the dummy substrate, and lowering the plurality of lift pins to seat the dummy substrate on the substrate support such that the dummy substrate exposes an inner edge region of the focus ring, and

wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.