Light emitting device

1 . A light emitting device comprising:

one or more semiconductor laser elements configured to emit light along one or more respective optical axes;

at least one of:

a lens member comprising at least one lens, and/or

a light reflective member configured to reflect at least 90% of light emitted from the one or more semiconductor laser elements;

a base comprising:

a bottom part that has a bottom face including a first region on which the one or more semiconductor laser elements are disposed and a second region on which the lens member and/or the light reflective member are disposed, and

a lateral part that surrounds the bottom face and extends upwards from the bottom face, wherein the lateral part has an uppermost face and comprises:

a first stepped portion including a first upper face, and

a second stepped portion including a second upper face, wherein;

the first stepped portion faces the second stepped portion, and

the first upper face and the second upper face are disposed below the uppermost face; and

one or more first metal films located on the first upper face of the first stepped portion, wherein:

in a top view:

the first upper face and the second upper face are disposed inward of the uppermost face,

a portion of the first upper face is located in front of the one or more semiconductor laser elements on the one or more respective optical axes,

a portion of the second upper face is located behind the one or more semiconductor laser elements on the one or more respective optical axes,

the second region is spaced apart from the first region on the one or more respective optical axes,

the first upper face is spaced apart from the second upper face on the one or more respective optical axes, and

the first region and the second region are disposed between the first upper face and the second upper face on the one or more respective optical axes.

2 . The light emitting device according to claim 1 , wherein:

a height of the first stepped portion from the bottom face is different from a height of the second stepped portion from the bottom face.

3 . The light emitting device according to claim 2 , wherein:

the height of the first stepped portion from the bottom face is higher than the height of the second stepped portion from the bottom face.

4 . The light emitting device according to claim 1 , further comprising:

one or more second metal films located on the second upper face of the second stepped portion.

5 . The light emitting device according to claim 4 , wherein:

the one or more second metal films are electrically connected to the one or more semiconductor laser elements.

6 . The light emitting device according to claim 1 , further comprising;

a cover member bonded to the uppermost face, wherein:

the uppermost face is a planer face.

7 . The light emitting device according to claim 1 , wherein:

in a top view, a periphery of the base is rectangular.

8 . The light emitting device according to claim 7 , wherein:

the lateral part comprises a third stepped portion including a third upper face and a fourth stepped portion including a fourth upper face,

the third stepped portion faces the fourth stepped portion, and

in a top view,

the third upper face and the fourth upper face are disposed inward of the uppermost face,

the first region and the second region are disposed between the third upper face and the fourth upper face,

the first upper face is directly adjacent to the third upper face and the fourth upper face, and

the second upper face is directly adjacent to the third upper face and the fourth upper face.

9 . The light emitting device according to claim 1 , wherein:

the one or more semiconductor laser elements are at least three semiconductor laser elements.

10 . A light emitting device comprising:

one or more semiconductor laser elements;

at least one of:

a lens member comprising at least one lens, and/or

a light reflective member configured to reflect at least 90% of light emitted from the one or more semiconductor laser elements;

a base having a rectangular periphery and comprising:

a bottom part that has a bottom face including a first region on which the one or more semiconductor laser elements are disposed and a second region on which the lens member and/or the light reflective member are disposed, and

a lateral part that surrounds the bottom face and extends upwards from the bottom face, wherein the lateral part has an uppermost face and comprises:

a first stepped portion including a first upper face, and

a second stepped portion including a second upper face,

a third stepped portion including a third upper face, and

a fourth stepped portion including a fourth upper face, wherein:

the first stepped portion faces the second stepped portion,

the third stepped portion faces the fourth stepped portion, and

the first upper face, the second upper face, the third upper face, and

the fourth upper face are disposed below the uppermost face; and

one or more first metal films located on the first upper face of the first stepped portion, wherein:

in a top view

the first upper face, the second upper face, the third upper surface, and the fourth upper face are disposed inward of the uppermost face,

the second region is spaced apart from the first region in a first direction,

the first upper face is spaced apart from the second upper face in the first direction,

the first region and the second region are disposed between the first upper face and the second upper face,

the first region and the second region are disposed between the third upper face and the fourth upper face,

the first upper face is directly adjacent to the third upper face and the fourth upper face, and

the second upper face is directly adjacent to the third upper face and the fourth upper face.