Method for producing a cooling element, and cooling element produced using such a method
A method for manufacturing a cooling element ( 1 ) for an electrical or electronic component, in particular a semiconductor element, the manufactured cooling element ( 1 ) having a cooling fluid channel system through which a cooling fluid can be passed during operation, comprising providing at least a first metal layer ( 11 ) realizing at least one recess ( 21, 22 ) in the at least one first metal layer ( 11 ), and forming at least a partial section of the cooling fluid channel system by means of the at least one recess ( 21, 22 ), wherein at least a first part ( 21 ) of the at least one recess ( 21, 22 ) in the at least first metal layer ( 11 ) is realized by erosion, in particular spark erosion.
1 . A method for manufacturing a cooling element ( 1 ) for an electrical or electronic component, the manufactured cooling element ( 1 ) having a cooling fluid channel system through which a cooling fluid can be passed in operation, comprising
providing at least a first metal layer ( 11 ),
realizing at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ), and
forming at least a partial section of the cooling fluid channel system by means of the at least one recess ( 21 , 22 ),
wherein at least a first part ( 21 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) is realized by erosion, characterized in that
at least a second part ( 22 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) is realized by an etching.
2 . The method according to claim 1 , further comprising:
providing at least one second metal layer ( 12 ), and
stacking the at least one first metal layer ( 11 ) and the at least one second metal layer ( 12 ) along a stacking direction(S), forming the at least one section of the cooling fluid channel system.
3 . The method of claim 1 , wherein the etching to form the at least one second portion ( 22 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) occurs temporally prior to forming the at least one first portion ( 21 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) by the eroding.
4 . The method according to claim 1 , wherein a plurality of first metal layers ( 11 ) are eroded simultaneously.
5 . The method according to claim 4 , wherein the plurality of first metal layers ( 11 ) are fixed in a clamping element ( 40 ).
6 . The method according to claim 1 , wherein the at least one first metal layer ( 11 ) has a thickness of more than 0.3 mm.
7 . The method according to claim 1 , wherein the at least one first metal layer ( 11 ) and/or the at least one second metal layer ( 12 ) is arranged between a lower cover layer ( 14 ) and an upper cover layer ( 15 ).
8 . The method according to claim 1 , wherein more than three first metal layers ( 11 ) and/or second metal layer ( 12 ) are provided, the thickness of which is greater than 0.3 mm.
9 . The method according to claim 1 , wherein all first metal layers ( 11 ) and/or second metal layers ( 12 ) have a thickness of more than 0.3 mm.
10 . The method according to claim 1 , wherein the shapes of the at least one recess ( 21 , 22 ) are different for at least three first metal layers ( 21 ).
11 . The method according to claim 1 , wherein the at least one first metal layer ( 11 ) is bonded to the at least one second metal layer ( 12 ).
12 . The method according to claim 1 , wherein a single first metal layer ( 11 ) is used to form the cooling element ( 1 ).
13 . A cooling element ( 1 ) produced by a method according to claim 1 , wherein a distance (A 1 ) between opposing side walls in the at least one first metal layer ( 11 ) is at least in regions smaller than 0.4 mm.
14 . The cooling element of claim 13 , wherein the distance (A 1 ) between opposing side walls in the at least one first metal layer ( 11 ) is at least in regions smaller than 0.3 mm.
15 . The cooling element of claim 13 , wherein the distance (A 1 ) between opposing side walls in the at least one first metal layer ( 11 ) is at least in regions smaller than 0.2 mm.
16 . A method for manufacturing a cooling element ( 1 ) for a semiconductor element, the manufactured cooling element ( 1 ) having a cooling fluid channel system through which a cooling fluid can be passed in operation, comprising
providing at least a first metal layer ( 11 ),
realizing at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ), and
forming at least a partial section of the cooling fluid channel system by means of the at least one recess ( 21 , 22 ),
wherein at least a first part ( 21 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) is realized by spark erosion, and
wherein at least a second part ( 22 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) is realized by an etching, the etching to form the at least one second portion ( 22 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) occurs temporally prior to forming the at least one first portion ( 21 ) of the at least one recess ( 21 , 22 ) in the at least one first metal layer ( 11 ) by the eroding.
17 . The method according to claim 16 , further comprising:
providing at least one second metal layer ( 12 ), and
stacking the at least one first metal layer ( 11 ) and the at least one second metal layer ( 12 ) along a stacking direction(S), forming the at least one section of the cooling fluid channel system.
18 . The method according to claim 16 , wherein the at least one first metal layer ( 11 ) has a thickness of more than 0.4 mm.
19 . The method according to claim 16 , wherein the at least one first metal layer ( 11 ) has a thickness of more than 0.8 mm.
20 . The method according to claim 17 , wherein more than five first metal layers ( 11 ) and/or second metal layers ( 12 ) are provided, the thickness of which is greater than 0.3 mm.
21 . The method according to claim 17 , wherein more than seven first metal layers ( 11 ) and/or second metal layers ( 12 ) are provided the thickness of which is greater than 0.3 mm.
22 . The method according to claim 17 , wherein all first metal layers ( 11 ) and/or all second metal layers ( 12 ) have a thickness of more than 0.3 mm.
23 . The method according to claim 17 , wherein all first metal layers ( 11 ) and/or all second metal layers ( 12 ) have a thickness of more than 0.4 mm.
24 . The method according to claim 17 , wherein all first metal layers ( 11 ) and/or all second metal layers ( 12 ) have a thickness of more than 0.8 mm.
25 . The method according to claim 16 , wherein a shape of the at least one recess ( 21 , 22 ) is different for least three first metal layers ( 21 ).
26 . The method according to claim 17 , wherein the at least one first metal layer ( 11 ) is bonded to the at least one second metal layer ( 12 ).
27 . The method according to claim 16 , wherein a single first metal layer ( 11 ) is used to form the cooling element ( 1 ).
28 . A cooling element ( 1 ) produced by a method according to claim 16 , wherein a distance (A 1 ) between opposing side walls in the at least one first metal layer ( 11 ) is at least in regions smaller than 0.4 mm.