IP Library Granted Patent US 12683569
Granted Patent B2
US 12683569 · App. 18/617,406 · Granted Jul 14, 2026

Filter, multiplexer, and multilayer electronic component

Inventor: Hidenori Kitazume (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H03H7/0115H01F27/2804H01G4/30H03H7/48H01F2027/2809H03H2001/0085
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Quick Facts
Patent No.
US 12683569
App. No.
18/617,406
Granted
Jul 14, 2026
Kind
B2
Abstract

A filter includes a multilayer body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked in a stack direction, an inductor including a first conductor pattern formed of at least one of the plurality of conductor layers, and a second conductor pattern provided in the multilayer body, the second conductor pattern being not connected to other conductors in the multilayer body, X≤7.5×10 7 /(fc×√{square root over (εr)}) being satisfied where a maximum width of the second conductor pattern is X (m), a frequency at a high-frequency end of a passband is fc (Hz), and a relative permittivity of the plurality of dielectric layers is εr.

Claims (17)

1 . A filter comprising:

a multilayer body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked in a stack direction;

an inductor including a first conductor pattern formed of at least one of the plurality of conductor layers; and

a second conductor pattern provided in the multilayer body, the second conductor pattern being not connected to other conductors in the multilayer body, X≤7.5×10 7 /(fc×√{square root over (εr)}) being satisfied where a maximum width of the second conductor pattern is X (m), a frequency at a high-frequency end of a passband of the filter is fc (Hz), and a relative permittivity of the plurality of dielectric layers is εr.

2 . The filter according to claim 1 , wherein the second conductor pattern is formed of a via conductor layer penetrating through at least one of the plurality of dielectric layers.

3 . The filter according to claim 1 , wherein the frequency at the high-frequency end of the passband is 1 GHz or higher.

4 . The filter according to claim 1 , wherein the second conductor pattern does not overlap the first conductor pattern when viewed from the stack direction.

5 . The filter according to claim 1 , wherein the plurality of conductor layers and the second conductor pattern are mainly composed of the same element.

6 . The filter according to claim 1 , wherein the plurality of conductor layers and the second conductor pattern contain silver.

7 . The filter according to claim 6 , wherein the second conductor pattern is formed of a via conductor layer that penetrates through at least one of adjacent dielectric layers with the first conductor pattern interposed therebetween among the plurality of dielectric layers.

8 . The filter according to claim 6 , wherein the second conductor pattern is formed of at least one of the following: a conductor layer on which the first conductor pattern is formed, and a conductor layer provided on a first surface of a first dielectric layer adjacent to the conductor layer of the plurality of dielectric layers, the first surface being opposite from a second surface, on which the first conductor pattern is provided, of the first dielectric layer.

9 . The filter according to claim 1 , wherein the filter is a low-pass filter or a bandpass filter.

10 . A multiplexer comprising the filter according to claim 1 .

11 . A multilayer electronic component comprising:

a multilayer body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked in a stack direction;

an inductor including a first conductor pattern formed of at least one of the plurality of conductor layers; and

a second conductor pattern provided in the multilayer body, the second conductor pattern being not connected to other conductors in the multilayer body, X≤10×10 7 /(fs×√{square root over (εr)}) being satisfied where a maximum width of the second conductor layer is X (m), a self-resonant frequency of the inductor is fs (Hz), and a relative permittivity of the plurality of dielectric layers is εr.