Acoustic wave device
An acoustic wave device includes a piezoelectric layer, an IDT electrode including electrode fingers, and a dielectric film covering the IDT electrode. When viewed in a direction orthogonal to a direction in which the electrode fingers extend, an area where adjacent two or more of the electrode fingers overlap one another is an intersecting area. The acoustic wave device further includes a thin-film layer at least a portion of which is embedded in the dielectric film, at least a portion of which overlaps the intersecting area in a plan view, an entirety of which does not overlap the electrode fingers in a plan view, having a higher density than the dielectric film, and having a smaller thickness than the electrode fingers. The electrode fingers and the thin-film layer are located at different positions in a thickness direction of the dielectric film.
1 . An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer (IDT) electrode on the piezoelectric layer, and including a plurality of electrode fingers; and
a dielectric film on the piezoelectric layer and covering the IDT electrode; wherein
when viewed in a direction orthogonal or substantially orthogonal to a direction in which the plurality of electrode fingers extend, an area where adjacent two or more of the plurality of electrode fingers overlap one another is an intersecting area;
the acoustic wave device further includes a thin-film layer at least a portion of which is embedded in the dielectric film, at least a portion of which overlaps the intersecting area in a plan view, an entirety or substantially an entirety of which does not overlap the plurality of electrode fingers in the plan view, having a higher density than the dielectric film, and having a smaller thickness than the plurality of electrode fingers; and
the plurality of electrode fingers and the thin-film layer are located at different positions in a thickness direction of the dielectric film.
2 . The acoustic wave device according to claim 1 , wherein
the dielectric film includes a first dielectric film on the piezoelectric layer, and a second dielectric film on the first dielectric film; and
a material of the first dielectric film and a material of the second dielectric film are different from each other.
3 . The acoustic wave device according to claim 2 , wherein
the first dielectric film includes silicon oxide; and
the second dielectric film includes silicon nitride.
4 . The acoustic wave device according to claim 1 , wherein the entirety or substantially the entirety of the thin-film layer is embedded in the dielectric film.
5 . The acoustic wave device according to claim 1 , wherein a material of the thin-film layer is the same as a material of at least a portion of any of the electrode fingers.
6 . The acoustic wave device according to claim 5 , wherein
each of the plurality of electrode fingers includes a plurality of metal layers; and
the material of the thin-film layer is the same as a material of any of the plurality of metal layers.
7 . The acoustic wave device according to claim 1 , further comprising:
a support substrate; wherein
the piezoelectric layer is on the support substrate.
8 . The acoustic wave device according to claim 1 , wherein the piezoelectric layer includes lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, crystal, or lead zirconate titanate.
9 . The acoustic wave device according to claim 1 , wherein the piezoelectric layer includes lithium tantalate or lithium niobate.
10 . The acoustic wave device according to claim 1 , wherein the IDT electrode includes Pt.
11 . The acoustic wave device according to claim 1 , wherein the IDT electrode includes a laminated metal film.
12 . The acoustic wave device according to claim 1 , wherein the thin-film layer includes Pt.
13 . The acoustic wave device according to claim 1 , further comprising a pair of reflectors on the piezoelectric layer with the IDT electrode interposed therebetween.