Packaged acoustic wave devices with multi-layer piezoelectric substrate with seal ring spaced from piezoelectric layers
A packaged acoustic wave component has two acoustic wave devices interconnected by a thermally conductive frame, at least one of the acoustic wave devices including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate includes a support layer and a piezoelectric layer disposed over the support layer. An interdigital transducer (IDT) electrode is disposed over the piezoelectric layer. The support layer has a high thermal conductivity, allowing heat generated by a first acoustic wave device with the multi-layer piezoelectric substrate to be transferred to a second acoustic wave device on which it is stacked to dissipate heat from the first acoustic wave device by way of the thermally conductive frame spaced from ends of the piezoelectric layers.
1 . A packaged acoustic wave component comprising:
a first acoustic wave device including a first multi-layer piezoelectric substrate and a first interdigital transducer electrode, the first multi-layer piezoelectric substrate including at least a first piezoelectric layer that covers a portion of a first support layer such that the first support layer extends outward from ends of the first piezoelectric layer, the first support layer having a higher thermal conductivity than the first piezoelectric layer, the first support layer;
a second acoustic wave device including a second piezoelectric layer and a second interdigital transducer electrode, the second piezoelectric layer covers a portion of a second support layer such that the second support layer extends outward from ends of the second piezoelectric layer, the first acoustic wave device stacked with the second acoustic wave device so that the first and second interdigital transducer electrodes face and are spaced apart from each other; and
a thermally conductive frame connected between the first and second support layers of the first and second acoustic wave devices with the thermally conductive frame spaced outward from the ends of the first and second piezoelectric layers by a gap, the thermally conductive frame in contact with the first and second support layers to transfer heat generated by the first acoustic wave device to the second acoustic wave device.
2 . The packaged acoustic wave component of claim 1 further comprising a first functional layer interposed between the first support layer and the first piezoelectric layer.
3 . The packaged acoustic wave component of claim 1 wherein the second acoustic wave device includes a second multi-layer piezoelectric substrate including the second piezoelectric layer disposed over the second support layer.
4 . The packaged acoustic wave component of claim 3 further comprising a second functional layer interposed between the second support layer and the second piezoelectric layer.
5 . The packaged acoustic wave component of claim 3 further comprising one or more through silicon vias extending through the second support layer at a location spaced from the ends of the second piezoelectric layer.
6 . The packaged acoustic wave component of claim 1 wherein the first support layer is made of a material chosen from a group consisting of silicon, aluminum nitride, sapphire and quartz.
7 . The packaged acoustic wave component of claim 1 further comprising one or more vias extending between the first and second acoustic wave devices at a location spaced outward from the ends of the first piezoelectric layer and the second piezoelectric layer.
8 . A radio frequency module comprising:
a package substrate;
a packaged acoustic wave component including a first acoustic wave device including a first multi-layer piezoelectric substrate including at least a first piezoelectric layer disposed over a portion of a first support layer such that the first support layer extends outward from ends of the first piezoelectric layer, and a first interdigital transducer electrode, a second acoustic wave device including a second piezoelectric layer disposed over a portion of a second support layer such that the second support layer extends outward from ends of the second piezoelectric layer, and a second interdigital transducer electrode, the first acoustic wave device stacked with the second acoustic wave device so that the first and second interdigital transducer electrodes face and are spaced apart from each other, and a thermally conductive frame connected between the first and second support layers of the first and second acoustic wave devices with the thermally conductive frame spaced outward from the ends of the first and second piezoelectric layers by a gap, the thermally conductive frame in contact with the first and second support structures to transfer heat generated by the first acoustic wave device to the second acoustic wave device; and
additional circuitry, the packaged acoustic wave component and additional circuitry disposed on the package substrate.
9 . The radio frequency module of claim 8 wherein the thermally conductive frame contacts the first support layer.
10 . The radio frequency module of claim 8 further comprising a first functional layer interposed between the first support layer and the first piezoelectric layer.
11 . The radio frequency module of claim 8 wherein the second acoustic wave device includes a second multi-layer piezoelectric substrate including the second piezoelectric layer disposed over the second support layer.
12 . The radio frequency module of claim 11 further comprising a second functional layer interposed between the second support layer and the second piezoelectric layer.
13 . The radio frequency module of claim 11 further comprising one or more through silicon vias extending through the second support layer at a location spaced from the ends of the second piezoelectric layer.
14 . The radio frequency module of claim 8 wherein the first support layer is made of a material chosen from a group consisting of silicon, aluminum nitride, sapphire and quartz.
15 . The radio frequency module of claim 8 further comprising one or more vias extending between the first and second acoustic wave devices at a location spaced outward from the ends of the first piezoelectric layer and the second piezoelectric layer.
16 . A wireless communication device comprising:
an antenna; and
a front end module including one or more packaged acoustic wave components configured to filter a radio frequency signal associated with the antenna, each surface packaged acoustic wave component including a first acoustic wave device including a first multi-layer piezoelectric substrate including at least a first piezoelectric layer disposed over a portion of a first support layer such that the first support layer extends outward from ends of the first piezoelectric layer, and a first interdigital transducer electrode, a second acoustic wave device including a second piezoelectric layer disposed over a portion of a second support layer such that the second support layer extends outward from ends of the second piezoelectric layer, and a second interdigital transducer electrode, the first acoustic wave device stacked with the second acoustic wave device so that the first and second interdigital transducer electrodes face and are spaced apart from each other, and a thermally conductive frame connected between the first and second support layers of the first and second acoustic wave devices with the thermally conductive frame spaced outward from the ends of the first and second piezoelectric layers by a gap, the thermally conductive frame in contact with the first and second support structures to transfer heat generated by the first acoustic wave device to the second acoustic wave device.
17 . The radio frequency module of claim 16 wherein the thermally conductive frame contacts the first support layer.
18 . The wireless communication device of claim 16 further comprising a first functional layer interposed between the first support layer and the first piezoelectric layer.
19 . The wireless communication device of claim 16 wherein the second acoustic wave device includes a second multi-layer piezoelectric substrate including the second piezoelectric layer disposed over the second support layer.
20 . The wireless communication device of claim 19 further comprising a second functional layer interposed between the second support layer and the second piezoelectric layer.
21 . The wireless communication device of claim 19 further comprising one or more through silicon vias extending through the second support layer at a location spaced from the ends of the second piezoelectric layer.
22 . The wireless communication device of claim 16 wherein the first support layer is made of a material chosen from a group consisting of silicon, aluminum nitride, sapphire and quartz.
23 . The wireless communication device of claim 16 further comprising one or more vias extending between the first and second acoustic wave devices at a location spaced outward from the ends of the first piezoelectric layer and the second piezoelectric layer.