Acoustic wave device including electrodes with different surface angles
An acoustic wave device includes a piezoelectric layer and a pair of electrodes. In a cross-section including first and second directions, at least one electrode of the pair of electrodes includes top, bottom, first side, and second side surfaces, the bottom surface being opposed to the top surface and closer to the piezoelectric layer than the top surface. A first angle between the first side surface and the first main surface is different from a second angle between the second side surface and the first main surface, and at least one of the first angle and the second angle is about 80° or larger.
1 . An acoustic wave device comprising:
a piezoelectric layer including a first main surface, and a second main surface opposed to the first main surface and located in a first direction from the first main surface; and
at least a pair of electrodes on the first main surface, facing each other in a second direction crossing the first direction, and adjacent to each other; wherein
in a cross section including the first direction and the second direction, at least one electrode of the pair of electrodes includes a top surface, a bottom surface, a first side surface, and a second side surface, the bottom surface being opposed to the top surface and being closer to the piezoelectric layer than the top surface is;
a first angle between the first side surface and the first main surface is different from a second angle between the second side surface and the first main surface;
at least one of the first angle and the second angle is about 80° or larger; and
the first angle is at an intersection of the first side surface and the first main surface, and the second angle is at an intersection of the second side surface and the first main surface.
2 . The acoustic wave device according to claim 1 , wherein
the piezoelectric layer includes lithium niobate or lithium tantalate; and
a bulk wave in a thickness-shear primary mode is utilized.
3 . The acoustic wave device according to claim 1 , wherein
the piezoelectric layer includes lithium niobate or lithium tantalate; and
d/p is about 0.5 or less, where d is an average thickness of the piezoelectric layer and p is a center-to-center distance between adjacent electrodes.
4 . The acoustic wave device according to claim 1 , wherein the first angle is about 70° or larger and about 90° or smaller, and the second angle is about 80° or larger.
5 . The acoustic wave device according to claim 1 , wherein the first angle is about 70° or larger and about 80° or smaller, and the second angle is about 80° or larger.
6 . The acoustic wave device according to claim 4 , wherein the second angle is about 80° or larger and about 100° or smaller.
7 . The acoustic wave device according to claim 1 , further comprising:
a protective film covering the first main surface of the piezoelectric layer and the electrodes; wherein
the protective film includes at least one of silicon oxide or silicon nitride.
8 . The acoustic wave device according to claim 3 , wherein d/p is about 0.24 or less.
9 . The acoustic wave device according to claim 1 , wherein a thickness of the piezoelectric layer is about 50 nm or more and about 1,000 nm or less.
10 . The acoustic wave device according to claim 1 , wherein each of the electrodes has a rectangular or substantially rectangular shape.
11 . The acoustic wave device according to claim 3 , wherein the center-to-center distance between adjacent electrodes is about 1 μm or more to about 10 μm or less.
12 . The acoustic wave device according to claim 1 , wherein a width of each of the electrodes is about 150 nm or more to about 1,000 nm or less.
13 . The acoustic wave device according to claim 1 , wherein a support is provided on the second main surface of the piezoelectric layer with an intermediate layer interposed therebetween.
14 . The acoustic wave device according to claim 13 , wherein each of the support and the intermediate layer has a frame shape and includes a cavity therein.
15 . The acoustic wave device according to claim 13 , wherein the intermediate layer includes silicon oxide.
16 . The acoustic wave device according to claim 13 , wherein the support includes Si.
17 . The acoustic wave device according to claim 16 , wherein the Si has a resistivity of about 4 kΩ or higher.
18 . The acoustic wave device according to claim 1 , wherein each of the electrodes includes at least one of Al or an AlCu alloy.
19 . The acoustic wave device according to claim 1 , wherein each of the electrodes includes an Al film laminated on a Ti film.