Image sensor with reduced resolution and full resolution

1 . An image sensor comprising:

an array of pixels arranged in first rows and in first columns, wherein:

the pixels are arranged in groups of N*N pixels, where N is an integer equal to or higher than 2;

in each of the groups, the pixels of the group are distributed into one or more sub-groups of a plurality of pixels; and

each pixel includes:

a photosensitive element,

a first node coupled to the photosensitive element,

a second node common to all pixels of a same sub-group, and coupled to a first potential,

a first transistor coupling the first and second nodes to each other,

a second transistor that is a source-follower transistor having a gate connected to the first node, and

a third transistor coupling the source of the second transistor to a reading line;

for each of the first columns, exactly P reading lines associated with the first column, where P is a positive integer;

for each of the reading lines, a reading circuit connected to the reading line; and

a control circuit configured, in a first operating mode, for each of the groups, to implement a reading of the group by controlling:

an ON state of the first transistor of each pixel of the group;

for each sub-group, an ON state of the third transistor of one or more given pixels from pixels of the sub-group, and an OFF state of the third transistor of remaining pixels from the pixels of the sub-group, wherein,

in each of the groups, the one or more given pixels of the group have their third transistors connected to a same reading line, wherein:

the groups are arranged in second rows and in second columns;

the control circuit is configured, in the first operating mode, to implement a concurrent reading of the groups of K second rows, where K is an integer belonging to a range from 2 to N*P; and

in each of the second columns, the third transistors of the one or more given pixels of the groups of the K second rows are connected to different reading lines if the third transistors belong to different groups.

2 . The image sensor according to claim 1 , wherein, in each of the groups, the pixels are distributed into a single sub-group coincident with the group.

3 . The image sensor according to claim 1 , wherein each sub-group includes a single given pixel.

4 . The image sensor according to claim 1 , wherein, in each of the first rows, all pixels of the first row have their third transistors connected to a different reading line.

5 . The image sensor according to claim 1 , wherein the first rows are arranged in sets of P first rows, and, in each set of P first rows, the third transistors of the pixels of a same first column are connected to different reading lines among the P reading lines associated with the first columns.

6 . The image sensor according to claim 5 , wherein the control circuit is configured, in a second operating mode, in each of the sets of P first rows, to implement a concurrent reading of the pixels of the P first rows of the set by controlling:

an OFF state of the first transistor of each pixel of each of the P first rows of the set, and

an ON state of the third transistor of each pixel of each of the P first rows of the set.

7 . The image sensor according to claim 6 , wherein, in the second operating mode, for each pixel, the control circuit is configured, for each integration phase by the pixel, to control the OFF state of the first transistor of the pixel.

8 . The image sensor according to claim 1 , wherein:

each pixel further includes a fourth transistor coupling the second node of the pixel to the first potential, the first potential being an initializing potential; and

the control circuit is configured, for each of the pixels, to implement an initialization of the pixel by simultaneously controlling an ON state of the first and fourth transistors of the pixel.

9 . The image sensor according to claim 8 , wherein:

each of the pixels includes a transfer gate coupling the first node to the photosensitive element; and

the control circuit is configured, for each of the pixels, to implement the initialization of the pixel by switching ON the transfer gate of the pixel, while the first and fourth transistors of the pixel are in the ON state, and to switch OFF the transfer gate at an end of the initialization of the pixel.

10 . The image sensor according to claim 8 , wherein, in the first operating mode, in each of the groups, the control circuit is configured to implement an initialization of a first part of the pixels of the group, and an initialization of a second part of the pixels of the group ending after the initialization of the first part of the pixels of the group.

11 . A device comprising:

an image sensor including an array of pixels arranged in first rows, first columns, and a plurality of groups of pixels, each of the plurality of groups of pixels including a plurality of sub-groups of pixels, each pixel of the array of pixels including:

a first node;

a photodetector coupled to the first node;

a first transistor coupled to the first node;

a second node, the first transistor coupled between the first node and the second node, the second node of pixels included in the same sub-group of the plurality of sub-groups being coupled to each other;

a second transistor coupled to the first node; and

a third transistor coupled between the second transistor and a reading line; and

a control circuit coupled to the image sensor, the control circuit configured, in a first operating mode, for each of the groups, to implement a reading of the group by controlling:

an ON state of the first transistor of each pixel of the group;

for each sub-group, an ON state of the third transistor of one or more given pixels from pixels of the sub-group, and an OFF state of the third transistor of remaining pixels from the pixels of the sub-group;

for each of the first columns, P reading lines associated with the first column, where P is a positive integer; and

for each of the reading lines, a reading circuit connected to the reading line, wherein

in each of the groups, the one or more given pixels of the group have their third transistors connected to a same reading line, and

the first rows are arranged in sets of P first rows, and, in each set of P first rows, the third transistors of the pixels of a same first column are connected to different reading lines among the P reading lines associated with the first columns.

12 . The device of claim 11 , wherein the reading line is coupled to another third transistor of a pixel included in a different group of the plurality of groups, a different row of the array of pixels, and the same column of the array of pixels.

13 . The device of claim 11 , wherein the third transistor of pixels in the same group of the plurality of groups are coupled to different reading lines.

14 . The device of claim 11 wherein the second transistor is a source-follower transistor.

15 . An image sensor comprising:

an array of pixels arranged in first rows and in first columns, wherein:

the pixels are arranged in groups of N*N pixels, where N is an integer equal to or higher than 2;

in each of the groups, the pixels of the group are distributed into one or more sub-groups of a plurality of pixels; and

each pixel includes:

a photosensitive element,

a first node coupled to the photosensitive element,

a second node common to all pixels of a same sub-group, and coupled to a first potential that is an initializing potential,

a first transistor coupling the first and second nodes to each other,

a second transistor that is a source-follower transistor having a gate connected to the first node,

a third transistor coupling the source of the second transistor to a reading line, and

a fourth transistor coupling the second node to the first potential; and

a control circuit configured to, for each of the pixels, to implement an initialization of the pixel by simultaneously controlling an ON state of the first and fourth transistors of the pixel.

16 . The image sensor according to claim 15 , wherein

the control circuit is configured, in a first operating mode, for each of the groups, to implement a reading of the group by controlling:

an ON state of the first transistor of each pixel of the group;

for each sub-group, an ON state of the third transistor of one or more given pixels from pixels of the sub-group, and an OFF state of the third transistor of remaining pixels from the pixels of the sub-group,

in each of the groups, the one or more given pixels of the group have their third transistors connected to a same reading line.