Image sensor
An image sensor includes a first pixel and a second pixel. The first pixel includes a first photodiode, a second photodiode at least partially overlapping the first photodiode in a first direction, a first metal shield on one photodiode of the first photodiode or the second photodiode in a vertical direction perpendicular to the first direction, a first color filter on another photodiode of the first photodiode or the second photodiode in the vertical direction, and a first micro lens on both the first metal shield and the first color filter in the vertical direction. The second pixel includes a third photodiode, a fourth photodiode at least partially overlapping the third photodiode in the first direction, a second color filter on both the third photodiode and the fourth photodiode in the vertical direction, and a second micro lens on the second color filter in the vertical direction.
1 . An image sensor, comprising:
a first pixel; and
a second pixel,
wherein the first pixel includes
a first photodiode,
a second photodiode at least partially overlapping the first photodiode in a first direction,
a first metal shield on one photodiode of the first photodiode or the second photodiode in a vertical direction perpendicular to the first direction,
a first color filter on another photodiode of the first photodiode or the second photodiode in the vertical direction, and
a first micro lens on both the first metal shield and the first color filter in the vertical direction, and
wherein the second pixel includes
a third photodiode,
a fourth photodiode at least partially overlapping the third photodiode in the first direction,
a second color filter on both the third photodiode and the fourth photodiode in the vertical direction, and
a second micro lens on the second color filter in the vertical direction.
2 . The image sensor of claim 1 ,
wherein the first pixel and the second pixel are adjacent to each other in the first direction.
3 . The image sensor of claim 2 , wherein
the first metal shield is on the first photodiode and the first color filter is on the second photodiode, and
the first metal shield is configured to block incident light passing through the first micro lens from being incident on the first photodiode, the incident light inclined in relation to the first photodiode.
4 . The image sensor of claim 2 , wherein
the first color filter on the first photodiode and the first metal shield is on the second photodiode, and
the first metal shield is configured to block incident light passing through the first micro lens from being incident on the second photodiode, the incident light inclined in relation to the second photodiode.
5 . The image sensor of claim 1 , wherein
the first pixel comprises an auto focusing (AF) pixel, and
the second pixel comprises a general pixel.
6 . The image sensor of claim 1 ,
wherein the first pixel and the second pixel comprise separate, respective auto focusing (AF) pixels.
7 . The image sensor of claim 1 , further comprising:
a Bayer pattern of color filters, the Bayer pattern including the first color filter and the second color filter, the Bayer pattern including a green color filter, a red color filter, and a blue color filter, such that
the first color filter is one filter of the green color filter, the red color filter, or the blue color filter, and
the second color filter is another filter of the green color filter, the red color filter, or the blue color filter.
8 . The image sensor of claim 1 , further comprising:
a first device isolation film configured to separate the first photodiode from the second photodiode;
a second device isolation film configured to separate the third photodiode from the fourth photodiode; and
a third device isolation film configured to separate the first pixel from the second pixel.
9 . The image sensor of claim 8 ,
wherein the first device isolation film, the second device isolation film, and the third device isolation film are spaced apart from each other in the first direction.
10 . An image sensor, comprising:
a pixel array, the pixel array including a plurality of pixels arrayed in a first direction and a second direction, the plurality of pixels including a first pixel and a second pixel,
wherein the plurality of pixels are arrayed in two adjacent columns and two adjacent rows,
wherein the first pixel includes
a first photodiode,
a second photodiode at least partially overlapping the first photodiode in the first direction,
a first metal shield on one photodiode of the first photodiode or the second photodiode in a vertical direction perpendicular to both the first direction and the second direction, and
a first color filter on another photodiode of the first photodiode or the second photodiode in the vertical direction, and
wherein the second pixel includes
a third photodiode,
a fourth photodiode at least partially overlapping the third photodiode in the first direction, and
a second color filter on both the third photodiode and the fourth photodiode in the vertical direction.
11 . The image sensor of claim 10 ,
wherein the first metal shield is configured to block incident light.
12 . The image sensor of claim 10 , further comprising:
a Bayer pattern of color filters, the Bayer pattern including the first color filter and the second color filter, the Bayer pattern including a green color filter, a red color filter, and a blue color filter, such that
the first color filter is one filter of the green color filter, the red color filter, or the blue color filter, and
the second color filter is another filter of the green color filter, the red color filter, or the blue color filter.
13 . The image sensor of claim 10 , wherein
the first pixel and the second pixel comprise separate, respective auto focusing (AF) pixels, and
the first pixel and the second pixel are adjacent to each other in the first direction.
14 . The image sensor of claim 10 , further comprising:
a first device isolation film configured to separate the first photodiode from the second photodiode;
a second device isolation film configured to separate the third photodiode from the fourth photodiode;
a third device isolation film configured to separate the first pixel from the second pixel; and
a grid pattern on the third device isolation film.
15 . The image sensor of claim 14 ,
wherein the first device isolation film, the second device isolation film, and the third device isolation film are spaced apart at equal intervals in the first direction or the second direction.
16 . The image sensor of claim 10 , wherein
the first photodiode and the second photodiode are connected to one floating diffusion node, and
the third photodiode and the fourth photodiode are connected to the one floating diffusion node.
17 . The image sensor of claim 10 , further comprising:
a first micro lens on both the first metal shield and the first color filter of the first pixel in the vertical direction; and
a second micro lens on both the second color filter of the second pixel in the vertical direction.