Active region structure and the forming method thereof
View Patent ↗The present invention provides an active region structure, the active region structure includes a plurality of sub-closed conductive patterns located on a substrate, the sub-closed conductive patterns are in contact with each other and form a larger closed pattern, a first boundary of the larger closed pattern extends along a horizontal direction, and a second boundary of the larger closed pattern extends along a vertical direction.
1 . A method of forming an active region structure, comprising:
forming a plurality of device cells arranged along a first direction to form a plurality of active lines;
forming an active boundary structure surrounding the plurality of active lines;
forming a branch structure connected to the active boundary structure, wherein the branch structure comprises: a first part extending along the first direction; and a second part directly contacting the first part and extending along a second direction, wherein the second direction is different from the first direction; and
forming a shallow trench insulation layer disposed between the plurality of device cells and the active boundary structure.
2 . The method according to claim 1 , wherein the active boundary structure comprises an irregular polygon with at least six corners.
3 . The method according to claim 1 , wherein the active boundary structure comprise at least one closed pattern.
4 . The method according to claim 3 , wherein the active boundary structure comprises a first boundary, a second boundary and a third boundary extending along the first direction contact with each other and form a larger closed pattern.
5 . The method according to claim 3 , wherein the active boundary structure continuously surrounds the plurality of active lines.
6 . An active region structure, comprising:
a plurality of device cells arranged along a first direction to form a plurality of active lines;
an active boundary structure surrounding the plurality of active lines;
a branch structure connected to the active boundary structure, wherein the branch structure comprises: a first part extending along the first direction; and a second part directly contacting the first part and extending along a second direction, wherein the second direction is different from the first direction; and
a shallow trench insulation layer disposed between the plurality of device cells and the active boundary structure.
7 . The active region structure according to claim 6 , wherein the active boundary structure comprises an irregular polygon with at least six corners.
8 . The active region structure according to claim 6 , wherein the active boundary structure comprises at least one closed pattern.
9 . The active region structure according to claim 8 , wherein the active boundary structure comprises a first boundary, a second boundary and a third boundary extending along the first direction.
10 . The active region structure according to claim 8 , wherein the active boundary structure continuously surrounds the plurality of active lines.