Semiconductor storage device
A semiconductor storage device includes conductive layers and inter-layer insulating layers alternately arranged over a substrate having a first region and a second region arranged in a first direction; and a first structure provided in a second region of the substrate. The first structure includes: a plurality of third regions provided at first positions corresponding to at least some of the plurality of conductive layers, respectively, and a plurality of fourth regions provided at second positions corresponding to at least some of the plurality of inter-layer insulating layers, respectively. A first width of the plurality of third regions in the first direction is greater than a second width of the plurality of fourth regions in the first direction.
1 . A semiconductor storage device comprising:
a substrate including a first region and a second region arranged in a first direction;
a plurality of conductive layers and a plurality of inter-layer insulating layers alternately arranged in a second direction intersecting a surface of the substrate, wherein the plurality of conductive layers and the plurality of inter-layer insulating layers each extend in the first direction over the first region and the second region;
a semiconductor layer provided in the first region, extending in the second direction, and facing the plurality of conductive layers;
a charge storage film provided between the plurality of conductive layers and the semiconductor layer; a first structure provided in the second region and extending in the second direction; and
a second insulating layer provided in the second region, extending in the second direction, and includes an outer surface surrounded by the first insulating layer,
wherein the first structure includes:
a plurality of third regions provided at first positions corresponding to at least some of the plurality of conductive layers, respectively, and
a plurality of fourth regions provided at second positions corresponding to at least some of the plurality of inter-layer insulating layers, respectively, and
a first width of the plurality of third regions in the first direction is greater than a second width of the plurality of fourth regions in the first direction,
wherein
the first structure includes a first insulating layer including at least one of the plurality of third regions,
the first insulating layer has at least one of: a density higher than a density of at least one of the plurality of inter-layer insulating layers, a hydrogen content smaller than a hydrogen content of at least one of the plurality of inter-layer insulating layers, or an etching rate for a first chemical solution smaller than an etching rate for the first chemical solution of at least one of the plurality of inter-layer insulating layers, and
the first insulating layer has at least one of a density higher than a density of the second insulating layer, a hydrogen content smaller than a hydrogen content of the second insulating layer, or an etching rate for a second chemical solution is smaller than an etching rate for the second chemical solution of the second insulating layer.
2 . The semiconductor storage device according to claim 1 , further comprising:
a second structure provided in the second region and extending in the second direction,
wherein a first protrusion amount is greater than 1 1/16 of a first distance, and wherein the first distance is equal to a distance between a central position of the first structure and a central position of the second structure in the first direction, and the first protrusion amount is equal to a half of a difference between the first width and the second width.
3 . The semiconductor storage device according to claim 1 , further comprising:
a contact electrode provided in the second region, extending in the second direction, and connected to one of the plurality of conductive layers.
4 . The semiconductor storage device according to claim 1 ,
wherein the first chemical solution includes hydrofluoric acid.
5 . The semiconductor storage device according to claim 1 , wherein the second chemical solution includes hydrofluoric acid.