Semiconductor package and method of fabricating the same

1 . A semiconductor package, comprising:

a substrate;

a chip structure mounted on the substrate;

a chip stack mounted on the substrate and spaced apart from the chip structure; and

a first dummy block disposed on a top surface of the chip structure,

wherein the chip structure comprises:

a first semiconductor chip;

a second dummy block disposed at a side of the first semiconductor chip; and

a mold layer covering the first semiconductor chip and the second dummy block,

wherein a bottom surface of the first semiconductor chip, a bottom surface of the second dummy block, and a bottom surface of the mold layer are coplanar with each other,

wherein the chip stack comprises second semiconductor chips, which are vertically stacked on the substrate,

wherein the second dummy block is disposed on a side surface of the first semiconductor chip, which does not face the chip stack, and

wherein the chip stack is disposed to horizontally overlap the first semiconductor chip and is disposed to horizontally overlap the first dummy block.

2 . The semiconductor package of claim 1 , wherein the chip structure is electrically connected to the substrate through connection terminals, which are provided between the first semiconductor chip and the substrate.

3 . The semiconductor package of claim 2 , further comprising an under-fill layer, which fills a space between the chip structure and the substrate and encloses the connection terminals,

wherein the second dummy block is spaced apart from the substrate by the under-fill layer.

4 . The semiconductor package of claim 3 , wherein a width in a first horizontal direction of the under-fill layer is larger than a width in the first horizontal direction of the chip structure.

5 . The semiconductor package of claim 1 , wherein a top surface of the first semiconductor chip, a top surface of the second dummy block, and a top surface of the mold layer are coplanar with each other.

6 . The semiconductor package of claim 1 , wherein the second dummy block comprises a first side surface facing the first semiconductor chip and a second side surface opposite to the first side surface, and

the second side surface of the second dummy block is exposed to an outside of the mold layer.

7 . The semiconductor package of claim 1 , wherein a first distance in a first horizontal direction between the first semiconductor chip and the chip stack is larger than a second distance in the first horizontal direction between the first semiconductor chip and the second dummy block.

8 . The semiconductor package of claim 1 , wherein an upper surface of the chip stack is disposed at the same level as an upper surface of the first dummy block.

9 . The semiconductor package of claim 1 , wherein the entirety of the first semiconductor chip overlaps at least a portion of the first dummy block, when viewed in a plan view.

10 . A semiconductor package, comprising:

a package substrate;

an interposer substrate disposed on the package substrate;

a chip stack mounted on the interposer substrate, the chip stack comprising first semiconductor chips, which are vertically stacked;

a second semiconductor chip mounted on the interposer substrate and horizontally spaced apart from the chip stack, the second semiconductor chip having a first side surface facing the chip stack, a second side surface adjacent to the first side surface, and a third side surface opposite the first side surface;

a first dummy structure provided on one of the second side surface of the second semiconductor chip and the third side surface of the second semiconductor chip;

a mold layer covering the second semiconductor chip and the first dummy structure; and

an under-fill layer filling a space between the second semiconductor chip and the interposer substrate and between the first dummy structure and the interposer substrate,

wherein the first dummy structure is spaced apart from the interposer substrate by the under-fill layer,

wherein the first dummy structure comprises bulk silicon,

wherein the mold layer is provided to fill a space between the second semiconductor chip and the first dummy structure, and

wherein a bottom surface of the mold layer contacts a top surface of the under-fill layer and is coplanar with a bottom surface of the first dummy structure and a bottom surface of the second semiconductor chip.

11 . The semiconductor package of claim 10 , wherein the first dummy structure has a first side surface facing the second semiconductor chip and a second side surface opposite to the first side surface, and the second side surface of the first dummy structure is exposed to an outside of the mold layer.

12 . The semiconductor package of claim 10 , wherein a top surface of the chip stack is coplanar with a top surface of the first dummy structure.

13 . The semiconductor package of claim 10 , wherein the second semiconductor chip is electrically connected to the interposer substrate through connection terminals, which are provided between the second semiconductor chip and the interposer substrate, and

the under-fill layer is provided to enclose the connection terminals.

14 . The semiconductor package of claim 10 , wherein a first distance in a first horizontal direction between the second semiconductor chip and the chip stack is larger than a second distance in the first horizontal direction between the second semiconductor chip and the first dummy structure.

15 . The semiconductor package of claim 10 , further comprising a second dummy structure, which is attached to a top surface of the second semiconductor chip.

16 . The semiconductor package of claim 15 , wherein a top surface of the chip stack is disposed at the same level as a top surface of the second dummy structure.

17 . A semiconductor package, comprising:

a substrate;

a chip stack mounted on the substrate, the chip stack comprising first semiconductor chips, which are vertically stacked;

a chip structure mounted on the substrate and horizontally spaced apart from the chip stack;

a first dummy structure disposed on the chip structure; and

a first mold layer disposed on the substrate to enclose the chip stack, the chip structure, and the first dummy structure,

wherein the chip structure comprises:

a second semiconductor chip having a vertically-extending first side surface facing the chip stack, a vertically-extending second side surface adjacent to the first side surface, and a vertically-extending third side surface opposite the first side surface;

a second dummy structure disposed on the second side surface of the second semiconductor chip or the third side surface of the second semiconductor chip; and

a second mold layer disposed between the second semiconductor chip and the second dummy structure to connect the second semiconductor chip to the second dummy structure,

wherein the first dummy structure is attached to an upper surface of the second semiconductor chip and an upper surface of the second dummy structure,

wherein the chip structure is mounted on the substrate through a connection terminal below the second semiconductor chip,

wherein the second dummy structure is spaced apart from the substrate, and

wherein the chip stack is disposed to horizontally overlap the second semiconductor chip and is disposed to horizontally overlap the first dummy structure.