Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a first fin-shaped structure on the MOSCAP region, forming a doped layer on the substrate of the non-MOSCAP region and the first fin-shaped structure on the MOSCAP region, removing the doped layer on the non-MOSCAP region, and then performing an anneal process to drive dopants from the doped layer into the first fin-shaped structure.
1 . A semiconductor device, comprising:
a substrate comprising a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region;
a first fin-shaped structure on the MOSCAP region;
a liner on the first fin-shaped structure;
a gate oxide layer on the non-MOSCAP region and the MOSCAP region; and
a gate electrode on the gate oxide layer.
2 . The semiconductor device of claim 1 , further comprising:
a second fin-shaped structure on the non-MOSCAP region;
the liner on the first fin-shaped structure;
the gate oxide layer on the substrate and the second fin-shaped structure of the non-MOSCAP region and the liner of the MOSCAP region; and
the gate electrode on the gate oxide layer.
3 . The semiconductor device of claim 2 , wherein a concentration of dopants in the first fin-shaped structure is greater than a concentration of dopants in the second fin-shaped structure.
4 . The semiconductor device of claim 1 , wherein the non-MOSCAP region comprises an input/output (I/O) region and a low-voltage (LV) region.
5 . The semiconductor device of claim 1 , further comprising a maximum concentration of dopants at a surface of the first fin-shaped structure.
6 . The semiconductor device of claim 1 , further comprising a first concentration of dopants at a surface of the first fin-shaped structure and a second concentration of dopants at a first depth of the first fin-shaped structure, wherein the second concentration is less than the first concentration.
7 . The semiconductor device of claim 6 , wherein a decrease from the first concentration to the second concentration comprises an exponential decay.
8 . The semiconductor device of claim 1 , wherein the first fin-shaped structure comprises phosphorus.