Semiconductor apparatus, and manufacturing method thereof

1 . A manufacturing method of a semiconductor apparatus, wherein the semiconductor apparatus includes a drift region of a first conductivity type provided in a semiconductor substrate having an upper surface and a lower surface, and a buffer region of a first conductivity type which is provided between the drift region and the lower surface of the semiconductor substrate and includes a plurality of concentration peaks of which carrier concentrations are higher than that of the drift region, and the method comprises:

setting, depending on a distribution of the carrier concentrations that the buffer region should have, dose amounts of hydrogen ions to be implanted into a plurality of depth positions corresponding to the plurality of concentration peaks; and

implanting, depending on the dose amounts that are set in the setting, the hydrogen ions into the semiconductor substrate, wherein

in the setting, among the plurality of concentration peaks, the dose amount of the hydrogen ions for a deepest peak farthest from the lower surface of the semiconductor substrate is set depending on a carbon concentration of the semiconductor substrate, and the dose amount for at least one of the concentration peaks among the concentration peaks other than the deepest peak is set regardless of the carbon concentration of the semiconductor substrate.

2 . The manufacturing method of the semiconductor apparatus according to claim 1 , wherein in the setting, among the plurality of concentration peaks, the dose amounts for all of the concentration peaks other than the deepest peak are set regardless of the carbon concentration of the semiconductor substrate.

3 . The manufacturing method of the semiconductor apparatus according to claim 2 , wherein in the setting, the dose amount for the deepest peak is set based further on a depth position of the deepest peak.

4 . The manufacturing method of the semiconductor apparatus according to claim 1 , wherein:

the plurality of concentration peaks includes a second shallow peak that is second closest from the lower surface of the semiconductor substrate, and a second deep peak that is second farthest from the lower surface of the semiconductor substrate; and

in the setting, the dose amount for the deepest peak is set based further on an integral value n2 of the carrier concentrations from the second shallow peak to the second deep peak.

5 . The manufacturing method of the semiconductor apparatus according to claim 4 , wherein in the setting, the dose amount for the deepest peak is set based further on an integral value n1 of the carrier concentrations of the buffer region on a side closer to the upper surface than the second deep peak.

6 . The manufacturing method of the semiconductor apparatus according to claim 5 , wherein in the setting, the dose amount for the deepest peak is set based further on an oxygen concentration of the semiconductor substrate.

7 . The manufacturing method of the semiconductor apparatus according to claim 6 , wherein in the setting, an allowable range of the dose amount that should be set for the deepest peak is predetermined depending on a combination of values of the carbon concentration C of the semiconductor substrate, the oxygen concentration O of the semiconductor substrate, the integral value n1, and the integral value n2, and the dose amount within the allowable range is set for the deepest peak.

8 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×1017[/cm3] to 1×1022[/cm3], and

6.167×10 −3 ×ln(x)+2.860×10 −2 ≤y<0.4 is satisfied,

the dose amount for the deepest peak is set to be 8×10 12 [/cm 2 ] or more.

9 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ], and

1.129×10 −2 ×ln(x)−2.660×10 −1 ≤y<6.167×10 −3 ×ln(x)+2.860×10 −2 is satisfied,

the dose amount for the deepest peak is set to be 4×10 12 [/cm 2 ] or more, and less than 8×10 12 [/cm 2 ].

10 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ], and

2.250×10 −2 ×ln(x)−8.436×10 −1 ≤y<1.129×10 −2 ×ln(x)−2.660×10 −1 is satisfied,

the dose amount for the deepest peak is set to be 2×10 12 [/cm 2 ] or more, and less than 4×10 12 [/cm 2 ].

11 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ], and

3.017×10 −2 ×ln(x)−1.272≤y<2.250×10 −2 ×ln(x)−8.436×10 −1 is satisfied,

the dose amount for the deepest peak is set to be 5×10 11 [/cm 2 ] or more, and less than 2×10 12 [/cm 2 ].

12 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein when

x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ], and

0.01≤y<3.017×10 −2 ×ln(x)−1.272 is satisfied,

the dose amount for the deepest peak is set to be less than 5×10 11 [/cm 2 ].

13 . The manufacturing method of the semiconductor apparatus according to claim 7 , wherein

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ], and:

if y≥6.167×10 −3 ×ln(x)+2.860×10 −2 is satisfied,

the dose amount for the deepest peak is set to be 8×10 12 [/cm 2 ] or more;

if 1.129×10 −2 ×ln(x)−2.660×10 −1 ≤y<6.167×10 −3 ×ln(x)+2.860×10 −2 is satisfied,

the dose amount for the deepest peak is set to be 4×10 12 [/cm 2 ] or more, and less than 8×10 12 [/cm 2 ];

if 2.250×10 −2 ×ln(x)−8.436×10 −1 ≤y<1.129×10 −2 ×ln(x)−2.660×10 −1 is satisfied,

the dose amount for the deepest peak is set to be 2×10 12 [/cm 2 ] or more, and less than 4×10 12 [/cm 2 ];

if 3.017×10 −2 ×ln(x)−1.272≤y<2.250×10 −2 ×ln(x)−8.436×10 −1 is satisfied,

the dose amount for the deepest peak is set to be 5×10 11 [/cm 2 ] or more, and less than 2×10 12 [/cm 2 ]; and

if 0.01≤y<3.017×10 −2 ×ln(x)−1.272 is satisfied,

the dose amount for the deepest peak is set to be less than 5×10 11 [/cm 2 ].

14 . The manufacturing method of the semiconductor apparatus according to claim 1 , wherein a value obtained by dividing the dose amount of the hydrogen ions for the deepest peak by an integral concentration of hydrogen chemical concentrations at the deepest peak is from one to three.

15 . The manufacturing method of the semiconductor apparatus according to claim 2 , wherein:

the plurality of concentration peaks includes a second shallow peak that is second closest from the lower surface of the semiconductor substrate, and a second deep peak that is second farthest from the lower surface of the semiconductor substrate; and

in the setting, the dose amount for the deepest peak is set based further on an integral value n2 of the carrier concentrations from the second shallow peak to the second deep peak.

16 . The manufacturing method of the semiconductor apparatus according to claim 3 , wherein:

the plurality of concentration peaks includes a second shallow peak that is second closest from the lower surface of the semiconductor substrate, and a second deep peak that is second farthest from the lower surface of the semiconductor substrate; and

in the setting, the dose amount for the deepest peak is set based further on an integral value n2 of the carrier concentrations from the second shallow peak to the second deep peak.

17 . A semiconductor apparatus, comprising:

a semiconductor substrate having an upper surface and a lower surface;

a drift region of a first conductivity type provided in the semiconductor substrate; and

a buffer region of a first conductivity type which is provided between the drift region and the lower surface of the semiconductor substrate, and includes a plurality of concentration peaks of which carrier concentrations are higher than that of the drift region, wherein

the plurality of concentration peaks includes a second shallow peak that is second closest from the lower surface of the semiconductor substrate, a deepest peak that is farthest from the lower surface of the semiconductor substrate, and a second deep peak that is second farthest from the lower surface of the semiconductor substrate, and

when n1 is an integral value of the carrier concentrations of the buffer region on a side upper than the second deep peak, n2 is an integral value of the carrier concentrations from the second shallow peak to the second deep peak, C is a carbon concentration of the semiconductor substrate, O is an oxygen concentration of the semiconductor substrate, and

when x=O×((C/(1×10 15 ))×exp(O/(1×10 17 )), and

y=n 1/( n 1+ n 2),

if x is from 1×10 17 [/cm 3 ] to 1×10 22 [/cm 3 ] and:

if 6.167×10 −3 ×ln(x)+2.860×10 −2 ≤y<0.4 is satisfied,

an integral concentration of hydrogen concentrations of the buffer region on a side upper than the second deep peak is 8×10 12 [/cm 2 ] or more;

if 1.129×10 −2 ×ln(x)−2.660×10 −1 ≤y<6.167×10 −3 ×ln(x)+2.860×10 −2 is satisfied,

the integral concentration of the hydrogen concentrations is 4×10 12 [/cm 2 ] or more, and less than 8×10 12 [/cm 2 ];

if 2.250×10 −2 ×ln(x)−8.436×10 −1 ≤y<1.129×10 −2 ×ln(x)−2.660×10 −1 is satisfied,

the integral concentration of the hydrogen concentrations is 2×10 12 [/cm 2 ] or more, and less than 4×10 12 [/cm 2 ];

if 3.017×10 −2 ×ln(x)−1.272≤y<2.250×10 −2 ×ln(x)−8.436×10 −1 is satisfied,

the integral concentration of the hydrogen concentrations is 5×10 11 [/cm 2 ] or more, and less than 2×10 12 [/cm 2 ]; and

if 0.01≤y<3.017×10 −2 ×ln(x)−1.272 is satisfied,

the integral concentration of the hydrogen concentrations is less than 5×10 11 [/cm 2 ].