Semiconductor device and method of manufacturing the same
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first fin and a gate electrode. The first fin extends along a first direction. The gate electrode has a sidewall extending along a second direction different from the first direction. The sidewall of the gate electrode defines an indentation adjacent to the first fin in a top view.
1 . A semiconductor device, comprising:
a first fin extending along a first direction; and
a gate electrode having a sidewall extending along a second direction different from the first direction,
wherein the sidewall of the gate electrode defines an indentation adjacent to the first fin in a top view.
2 . The semiconductor device of claim 1 , further comprising:
a second fin extending along the first direction, wherein the sidewall of the gate electrode further extends across the second fin, and the sidewall of the gate electrode defines a protruding portion adjacent to the second fin.
3 . The semiconductor device of claim 1 , further comprising:
a second fin extending along the first direction, wherein the gate electrode has a first length along the first direction adjacent to the first fin and a second length along the second direction adjacent to the second fin, wherein the first length is different form the second fin.
4 . The semiconductor device of claim 3 , wherein the first fin and the second fin are included in a fin group, and the first fin is an outer fin of the fin group.
5 . The semiconductor device of claim 3 , wherein the sidewall of the gate electrode and a sidewall of the first fin form an acute angle in a top view.
6 . The semiconductor device of claim 5 , wherein the acute angle is equal to or greater than about 30° and less than about 90°.
7 . The semiconductor device of claim 5 , wherein the sidewall of the gate electrode and a sidewall of the second fin form an obtuse angle in a top view.
8 . The semiconductor device of claim 3 , further comprising:
a gate dielectric disposed on the first fin, wherein the gate dielectric defines an indentation adjacent to the first fin in a top view.
9 . The semiconductor device of claim 1 , wherein the indentation overlaps the first fin along a third direction substantially orthogonal to the first direction and the second direction.
10 . A semiconductor device, comprising:
a first fin group comprising a first fin and a second fin adjacent to the first fin, each of which extends along a first direction, wherein the first fin is an outer fin of the first fin group; and
a gate electrode extending along a second direction and across at least the first fin and the second fin of the first fin group,
wherein the gate electrode has a first narrow portion adjacent to the first fin.
11 . The semiconductor device of claim 10 , wherein the second fin is an intra-fin of the first fin group, and the gate electrode has a wide portion adjacent to the second fin.
12 . The semiconductor device of claim 11 , wherein the gate electrode has a middle portion between the first fin and the second fin, and a length of the middle portion is greater than a length of the first narrow portion along the first direction.
13 . The semiconductor device of claim 12 , wherein the length of the middle portion is less than a length of the wide portion along the first direction.
14 . The semiconductor device of claim 10 , further comprising:
a second fin group distinct from the first fin group, wherein a distance between the first fin group and the second fin group is greater than a pitch of the first fin group, and the second fin group comprises a third fin which is an outer fin of the second fin group, and the gate electrode has a second narrow portion adjacent to the third fin.
15 . The semiconductor device of claim 10 , wherein the gate electrode has a sidewall extending along the second direction, the sidewall of the gate electrode and a sidewall of the first fin form a first angle, and the sidewall of the gate electrode and a sidewall of the second fin form a second angle different from the first angle from a top view.
16 . The semiconductor device of claim 15 , wherein the first angle is less than the second angle.
17 . The semiconductor device of claim 15 , wherein the first angle is an acute angle.
18 . The semiconductor device of claim 15 , wherein the second angle is an obtuse angle.
19 . A method of manufacturing a semiconductor device, comprising:
forming a fin group on a substrate, wherein the fin group comprises a first fin and a second fin abutting the first fin, and the first fin is an outer fin of the fin group;
forming a semiconductor material layer over the fin group; and
patterning the semiconductor material layer to form a dummy gate electrode, wherein the dummy gate electrode has a narrow portion adjacent to the first fin and a wide portion adjacent to the second fin.
20 . The method of claim 19 , further comprising:
removing the dummy gate electrode; and
forming a gate electrode having a narrow portion adjacent to the first fin and a wide portion adjacent to the second fin.