Apparatus and electronic devices including transistors comprising two-dimensional materials
An apparatus including an array of memory cells comprising transistors is disclosed. One or more of the transistors comprise a crystalline material extending substantially transverse to a base material. A gate dielectric material is adjacent to the crystalline material. A two-dimensional material of a channel region directly intervenes between the gate dielectric material and the crystalline material. The gate dielectric material overlies additional portions of the two-dimensional material of the channel region. One or more gates are adjacent to the gate dielectric material. An electronic device is also disclosed comprising one or more of the transistors. The one or more of the transistors comprise a channel region, a gate dielectric region adjacent to the channel region, and one or more gates adjacent to the gate dielectric region. The channel region comprises opposing sidewalls separated by a pillar structure and substantially perpendicular to a base material.
1 . An apparatus, comprising:
one or more transistors individually comprising:
a pillar region extending above a material;
a channel comprising a two-dimensional material directly abutting sidewalls of the pillar region, inner sidewalls of the channel extending substantially continuously along an entire height of the pillar region;
a gate dielectric including a first sidewall and a second sidewall opposite to the first sidewall, the first sidewall of the gate dielectric directly adjacent to the two-dimensional material on a side of the channel opposite the pillar region, upper surfaces of the pillar region, the channel, and the gate dielectric substantially coplanar with each other; and
a gate directly adjacent to the second sidewall of the gate dielectric and extending along a portion of the second sidewall of the gate dielectric.
2 . The apparatus of claim 1 , wherein the material comprises one or more metal, the channel directly contacting the one or more metal of the material.
3 . The apparatus of claim 1 , wherein the pillar region is substantially perpendicular to the material.
4 . The apparatus of claim 1 , wherein the pillar region includes a seed material comprising a crystalline aluminum oxide, gallium nitride, aluminum nitride, boron nitride, graphene, or any combination thereof.
5 . The apparatus of claim 1 , wherein the pillar region includes an amorphous phase dielectric material.
6 . The apparatus of claim 5 , wherein the amorphous phase dielectric material comprises a silicon oxide, a silicon oxycarbide, a hydrogenated oxycarbide (SiOCH), a hydrogenated silicon carboxide (SiCOH), or any combination thereof.
7 . The apparatus of claim 1 , wherein the two-dimensional material comprises molybdenum sulfide, molybdenum selenide, molybdenum telluride, tungsten sulfide, tungsten selenide, tungsten telluride, zirconium sulfide, zirconium selenide, zirconium telluride, hafnium sulfide, hafnium selenide, hafnium telluride, or any combination thereof.
8 . An apparatus, comprising:
an array of memory cells comprising transistors, one or more of the transistors comprising:
a crystalline material extending substantially transverse to a base material;
a gate dielectric material adjacent to the crystalline material;
one or more gates adjacent to the gate dielectric material; and
a channel comprising a two-dimensional material, the channel including:
a vertically extending portion directly intervening between the gate dielectric material and the crystalline material, the gate dielectric material extending along an entire height of the vertically extending portion of the channel, and
a horizontally extending portion directly intervening between the gate dielectric material and at least one metal of the base material, the horizontally extending portion of the channel in direct contact with the gate dielectric material and the at least one metal of the base material.
9 . The apparatus of claim 8 , wherein the crystalline material comprises a crystalline aluminum oxide material.
10 . The apparatus of claim 8 , wherein the two-dimensional material comprises a transition metal dichalcogenide, graphene, graphene oxide, stanene, phosphorene, hexagonal boron nitride, borophene, silicone, graphyne, germanene, germanane, a 2D supracrystal, or any combination thereof.
11 . The apparatus of claim 8 , wherein the channel comprises two substantially L-shaped channel structures.
12 . The apparatus of claim 11 , wherein the crystalline material exhibits a columnar shape positioned laterally between the two substantially L-shaped channel structures.
13 . An electronic device, comprising:
memory cells, one or more of the memory cells comprising transistors, one or more of the transistors comprising:
a channel region comprising opposing sidewalls separated by a pillar structure, the channel region comprising a two-dimensional material and the opposing sidewalls of the channel region substantially perpendicular to a base material;
a gate dielectric region adjacent to the channel region, an upper surface of the gate dielectric region substantially coplanar with an upper surface of the channel region; and
one or more gates adjacent to the gate dielectric region.
14 . The electronic device of claim 13 , wherein the gate dielectric region includes two portions, each portion positioned on sidewalls of the channel region distal to the pillar structure.
15 . The electronic device of claim 13 , wherein each of the opposing sidewalls of the channel region is in direct contact with the pillar structure.
16 . The electronic device of claim 13 , wherein the one or more gates are laterally adjacent to the channel region.
17 . The electronic device of claim 13 , wherein the channel region comprises one or more horizontally-orientated portions vertically underlying the gate dielectric region.
18 . The electronic device of claim 13 , wherein a cross-section of the channel region exhibits an L-shape.
19 . The electronic device of claim 13 , wherein the two-dimensional material comprises a crystalline material.